ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Vdc
Vdc
Vdc
mAdc
Rating
MPSA44
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
High-Voltage NPN Transistors
(Ta=25 C)
400
5.0
200
400
Total Device Dissipation T =25 C
0.625
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCE= 400 Vdc, I =0)
Collector Cutoff Current (VCB= 400 Vdc, IE=0)
Emitter Cutoff Current (VEB= 4.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
5.0
-
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
400
400
5.0
0.1
d
B
C
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f=30MHz)
fT
50
-
MHz
DC Current Gain
(IC= 1.0 mAdc, VCE=10Vdc)
(IC= 10 mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
-
-
-
Vdc
Vdc
70
80
-
300
On Characteristics
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
0.75
-
-
-
MPSA44
WE IT R ON
WEITRON
http://www.weitron.com.tw
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)
(IC= 100 mAdc, VCE= 10Vdc)
HFE(3)
60
.
0.2
0.3
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