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WEITRON
WSD520S/521S
SMALL SIGNAL
SCHOTTKY DIODES
200m AMPERES
30 VOLTS
*Extrmely High Switching Speed.
*Low Forward Voltage and Low Reverse Current.
*High Reliability.
*Schottky Barrier Diodes Encapsulated in a SOD-523 Package
Description:
Feature:
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
Extremely low forward voltage reduces conduction loss,
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Surface Mount Schottky Barrier Diodes
Dim
A
B
C
D
E
J
K
Min
1.10
0.70
0.50
0.25
0.15
0.07
1.50
Max
1.30
0.90
0.70
0.35
0.25
0.20
1.70
S OD-523
P IN 1. C A T HODE
2. A NODE
SOD-523 Outline Dimensions
Unit:mm
1/4
Rev.A 21-Jul-05
SOD-523
Lead(Pb)-Free
P b
1
2
WEITRON
WSD520S/521S
Maximum Ratings
(Ta=25 C Unless otherwise noted)
Characteristic
Reverse Voltage
Average Rectifier
Forward Current
Peak Forward Surge Current
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VR
IF(AV)
IFSM
TJ
Tstg
Value
Unit
30
200
1.0
-40 to +125
Volts
mA
A
C
Device Marking
Item
Marking
Eqivalent Circuit diagram
2
1
C
Electrical Characteristics
(TA=25 C Unless otherwise noted)
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(1)
Characteristic
Symbol
Reverse Breakdown Voltage (IR=100A)
Forward Voltage
IF=200mA
Reverse Leakage
V(BR)R
VF
IR
Min
Max
Unit
30
Volts
Volts
Adc
0.60
0.50
WSD520S
WSD521S
B , 5J
NOTE: 1. 60HZ for 1
125
WSD520S
WSD521S
WSD520S
WSD521S
V =10V
R
1.0
30.0
C , 5M
2/4
Rev.A 21-Jul-05
1
10
100
1m
10m
100m
1
F
O
R
W
A
R
D
C
U
R
R
E
N
T
:
I
F
(
A
)
F OR WAR D VOLTAG E : V
F
(V )
0
0.1
0.2
0.3
0.4
0.5
0.7
0.6
C
5
2
1
aT
C
5
7
C
52
C
52
F ig. 2 F orward characteris tics
Electrical characteristic curves (Ta=25 C)
0
0
20
40
60
80
100
25
50
75
100
125
I
o
C
U
R
R
E
N
T
(
%
)
AMB IE NT T E MP E R AT UR E : T a (
C )
F ig 1. Derating curve
(mounting on glas s epoxy P C B s )
0
10
20
30
1
10
100
R E V E R S E V OLT AG E : V
R
(V )
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
E
E
N
T
E
R
M
I
N
A
L
S
:
C
T
(
p
F
)
F ig. 4 C apacitance between
terminals characteris tics
f= 1MHz
1n
10n
100n
1
10
100
1m
R
E
V
E
R
S
E
C
U
R
R
E
N
T
:
I
R
(
A
)
R E V E R S E VO LTAG E : V
R
(V )
0
10
20
30
Ta=125 C
75 C
25 C
25 C
F ig. 3 R evers e characteris tics
WSD520S/521S
WEITRON
http://www.weitron.com.tw
WSD520S
WSD520S
WSD520S
3/4
Rev.A 21-Jul-05
WSD521S
1
10
100
1m
10m
100m
1
F
O
R
W
A
R
D
C
U
R
R
E
N
T
:
I
F
(
A
)
F OR WAR D VOLTAG E : V
F
(V )
0
0.1
0.2
0.3
0.4
0.5
0.7
0.6
C
5
2
1
aT
C
5
7
C
52
C
52
F ig. 5 F orward characteris tics
0
10
20
30
1
10
100
R E V E R S E V OLT AG E : V
R
(V )
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
E
E
N
T
E
R
M
I
N
A
L
S
:
C
T
(
p
F
)
F ig. 7 C apacitance between
terminals characteris tics
f= 1MHz
1n
10n
100n
1
10
100
1m
R
E
V
E
R
S
E
C
U
R
R
E
N
T
:
I
R
(
A
)
R E V E R S E VOLTAG E : V
R
(V )
0
10
20
30
Ta=125 C
75 C
25 C
25 C
F ig. 6 R evers e characteris tics
WSD520S/521S
WEITRON
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WSD521S
WSD521S
4/4
Rev.A 21-Jul-05
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