ER1000FCT ER1006FCT
1 of 3 2002 Won-Top Electronics
ER1000FCT ER1006FCT
10A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction B
!
Super-Fast Switching for High Efficiency
!
High Current Capability C
!
Low Reverse Leakage Current
!
High Surge Current Capability G A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1 2 3
D
Mechanical Data
F
E
!
Case: ITO-220 Full Molded Plastic
!
Terminals: Plated Leads Solderable per P
MIL-STD-202, Method 208
!
Polarity: See Diagram I
!
Weight: 2.24 grams (approx.) L
!
Mounting Position: Any H
!
Marking: Type Number
PIN 1 - +
J
PIN 3 - PIN 2
K
Maximum Ratings and Electrical Characteristics
@T
A
=25C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
ER
1000FCT
ER
1001FCT
ER
1001AFCT
ER
1002FCT
ER
1003FCT
ER
1004FCT
ER
1006FCT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
150
200
300
400
600
V
RMS Reverse Voltage
V
R(RMS)
35
70
105
140
210
280
420
V
Average Rectified Output Current @T
C
= 100C
I
O
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
150
A
Forward Voltage @I
F
= 5.0A
V
FM
0.95
1.3
1.7
V
Peak Reverse Current @T
A
= 25C
At Rated DC Blocking Voltage @T
A
= 100C
I
RM
10
400
A
Reverse Recovery Time (Note 1)
t
rr
35
50
nS
Typical Junction Capacitance (Note 2)
C
j
70
50
pF
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
ITO-220
Dim
Min
Max
A
14.9
15.1
B
--
10.5
C
2.62
2.87
D
3.56
4.06
E
13.46
14.22
F
0.68
0.94
G
3.74
3.91
H
5.84
6.86
I
4.44
4.70
J
2.54
2.79
K
0.35
0.64
L
1.14
1.40
P
2.41
2.67
All Dimensions in mm
30
60
90
0
1
20
15
0
1
80
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3 ms single half-sine-wave
JEDEC method
10
100
400
0.1
1.0
10
100
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
1003 - 1006
1000 - 1002
C
,
CA
P
ACI
T
ANC
E
(pF)
j
0
2
4
6
8
10
0
50
100
150
I
,
A
VERAG
E
FO
R
W
AR
D
CURREN
T
(A)
(A
V)
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
0.1
1.0
10
100
0.2
0.6
1.0
1.4
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
Pulse width = 300 s
2% duty cycle
1006
1003 - 1004
1000 - 1002
ER1000FCT ER1006FCT
2 of 3 2002 Won-Top Electronics
ER1000FCT ER1006FCT
3 of 3 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
ER1000FCT
ITO-220
50 Units/Tube
ER1001FCT
ITO-220
50 Units/Tube
ER1001AFCT
ITO-220
50 Units/Tube
ER1002FCT
ITO-220
50 Units/Tube
ER1003FCT
ITO-220
50 Units/Tube
ER1004FCT
ITO-220
50 Units/Tube
ER1006FCT
ITO-220
50 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
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