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Электронный компонент: ER801F

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ER800F ER806F
1 of 3 2002 Won-Top Electronics
ER800F ER806F
8.0A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction B
!
Super-Fast Switching for High Efficiency
!
High Current Capability C
!
Low Reverse Leakage Current
!
High Surge Current Capability G A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1 2
D
Mechanical Data
F
E
!
Case: ITO-220A Full Molded Plastic
!
Terminals: Plated Leads Solderable per P
MIL-STD-202, Method 208
!
Polarity: See Diagram I
!
Weight: 2.24 grams (approx.) L
!
Mounting Position: Any H
!
Marking: Type Number
PIN 1+
J
PIN 2 -
K
Maximum Ratings and Electrical Characteristics
@T
A
=25C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
ER
800F
ER
801F
ER
801AF
ER
802F
ER
803F
ER
804F
ER
806F
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
150
200
300
400
600
V
RMS Reverse Voltage
V
R(RMS)
35
70
105
140
210
280
420
V
Average Rectified Output Current @T
C
= 105C
I
O
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
125
A
Forward Voltage @I
F
= 8.0A
V
FM
0.95
1.3
1.7
V
Peak Reverse Current @T
A
= 25C
At Rated DC Blocking Voltage @T
A
= 100C
I
RM
10
400
A
Reverse Recovery Time (Note 1)
t
rr
35
50
nS
Typical Junction Capacitance (Note 2)
C
j
70
50
pF
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
ITO-220A
Dim
Min
Max
A
14.9
15.1
B
--
10.5
C
2.62
2.87
D
3.56
4.06
E
13.46
14.22
F
0.68
0.94
G
3.74
3.91
H
5.84
6.86
I
4.44
4.70
J
2.54
2.79
K
0.35
0.64
L
1.14
1.40
P
4.95
5.20
All Dimensions in mm
30
60
90
0
1
20
15
0
1
80
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3 ms single half-sine-wave
JEDEC method
10
100
400
0.1
1.0
10
100
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
803F - 806F
800F - 802F
C
,
CAP
ACIT
ANCE
(pF)
j
0
2
4
6
8
10
0
50
100
150
I
,
A
VERAGE
FOR
W
ARD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
0.1
1.0
10
100
0.2
0.6
1.0
1.4
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
Pulse width = 300 s
2% duty cycle
806F
803F - 804F
800F - 802F
ER800F ER806F
2 of 3 2002 Won-Top Electronics
ER800F ER806F
3 of 3 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
Package Type
Shipping Quantity
ER800F
ITO-220A
50 Units/Tube
ER801F
ITO-220A
50 Units/Tube
ER801AF
ITO-220A
50 Units/Tube
ER802F
ITO-220A
50 Units/Tube
ER803F
ITO-220A
50 Units/Tube
ER804F
ITO-220A
50 Units/Tube
ER806F
ITO-220A
50 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
We power your everyday.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com