SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Gain of 400 at I
C
=2 Amps and low saturation voltage
* Extremely low equivalent on-resistance; R
CE(sat)
92m
at 3A
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL -
FZT689B
COMPLEMENTARY TYPE -
FZT789B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
8
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
20
V
I
C
=100
A
V
(BR)CEO
20
V
I
C
=10mA*
Emitter-Base V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=16V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.10
0.50
0.45
V
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=2A, I
B
=10mA*
I
C
=3A, I
B
=20mA*
Base-EmitterSaturationVoltage V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
500
400
150
I
C
=0.1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
30
800
ns
ns
I
C
=500mA,I
B1
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT689B
FZT689B
C
C
E
B
3 - 220
3 - 219
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
olts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
ol
t
s)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- Nor
m
alis
ed Gain
V
-
(V
olts)
V
-
(V
o
lts
)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h
- T
y
pic
al
Ga
i
n
T
amb
=25C
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
I
C
/I
B
=100
-55C
+25C
+100C
+175C
0
0
-55C
+25C
+100C
+175C
I
C
/I
B
=100
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Gain of 400 at I
C
=2 Amps and low saturation voltage
* Extremely low equivalent on-resistance; R
CE(sat)
92m
at 3A
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL -
FZT689B
COMPLEMENTARY TYPE -
FZT789B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
8
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
20
V
I
C
=100
A
V
(BR)CEO
20
V
I
C
=10mA*
Emitter-Base V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=16V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.10
0.50
0.45
V
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=2A, I
B
=10mA*
I
C
=3A, I
B
=20mA*
Base-EmitterSaturationVoltage V
BE(sat)
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9
V
I
C
=1A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
500
400
150
I
C
=0.1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
16
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
30
800
ns
ns
I
C
=500mA,I
B1
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FZT689B
FZT689B
C
C
E
B
3 - 220
3 - 219
-55C
+25C
+100C
+175C
+100C
+25C
-55C
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
0.4
0.2
0
0.8
0.6
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
olts)
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
-
(V
ol
t
s)
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
h
- Nor
m
alis
ed Gain
V
-
(V
olts)
V
-
(V
o
lts
)
V
CE
=2V
V
CE
=2V
1.5K
1K
500
h
- T
y
pic
al
Ga
i
n
T
amb
=25C
I
C
/I
B
=10
I
C
/I
B
=200
I
C
/I
B
=100
I
C
/I
B
=100
-55C
+25C
+100C
+175C
0
0
-55C
+25C
+100C
+175C
I
C
/I
B
=100
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0.01
0.1
10
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