N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 FEB 94
FEATURES
*
60 Volt V
DS
*
R
DS(on)
=5
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
= 25C
I
D
270
mA
Pulsed Drain Current
I
DM
3
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
= 25C
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D
=100
A, V
GS
=0V
Gate-Source
Breakdown Voltage
V
GS(th)
0.8
2.5
V
ID=1mA, V
DS
= V
GS
Gate Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage
Drain Current (1)
I
DSS
10
A
V
DS
=60 V, V
GS
=0V
On State Drain
Current(1)
I
D(on)
750
mA
V
DS
=15 V, V
GS
=10V
Static Drain Source On
State Resistance (1)
R
DS(on)
5.0
7.5
V
GS
=10V,I
D
=500mA
V
GS
=5V, I
D
=200mA
Forward
Transconductance
(1)(2)
g
fs
100
mS
V
DS
=15V,I
D
=500mA
Input Capacitance (2)
C
iss
60
pF
Common Source
Output Capacitance (2)
C
oss
25
pF
V
DS
=25 V, V
GS
=0V
f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Time (2)(3)
t
(on)
10
ns
V
DD
15V, I
D
=600mA
Turn-Off Time (2)(3)
t
(off)
10
ns
E-Line
TO92 Compatible
VN10LP
3-90
D
G
S
PDF 
ZIP