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Электронный компонент: ZDT605

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SM-8 DUAL NPN MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T605
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
140
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
1
A
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
ZDT605
3 - 324
ZDT605
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
140
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
CEO(SUS)
120
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.01
10
A
A
V
CB
=120V
V
CB
=120V,
T
amb
=100C
Collector Cutoff Current
I
CES
10
A
V
CES
=120V
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
=8V
Collector-Emitter Saturation
Voltage
V
CE(sat)
1.0
1.5
V
V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.8
V
I
C
=1A, I
B
=1mA*
Base-Emitter TurnOn Voltage V
BE(on)
1.7
V
I
C
=1A, V
CE
=5V*
Static Forward
Current Transfer Ratio
h
FE
2K
5K
2K
0.5K
100K
I
C
=50mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
Input Capacitance
C
ibo
90 Typical
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
15 Typical
pF
V
CE
=10V, f=1MHz
Switching Times
t
on
0.5 Typical
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
1.6 Typical
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
3 - 325
SM-8
(8 LEAD SOT223)
SM-8 DUAL NPN MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T605
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
140
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
1
A
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die on
Both die on equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
ZDT605
3 - 324
ZDT605
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
140
V
I
C
=100
A
Collector-Emitter Breakdown
Voltage
V
CEO(SUS)
120
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10
V
I
E
=100
A
Collector Cutoff Current
I
CBO
0.01
10
A
A
V
CB
=120V
V
CB
=120V,
T
amb
=100C
Collector Cutoff Current
I
CES
10
A
V
CES
=120V
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
=8V
Collector-Emitter Saturation
Voltage
V
CE(sat)
1.0
1.5
V
V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.8
V
I
C
=1A, I
B
=1mA*
Base-Emitter TurnOn Voltage V
BE(on)
1.7
V
I
C
=1A, V
CE
=5V*
Static Forward
Current Transfer Ratio
h
FE
2K
5K
2K
0.5K
100K
I
C
=50mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
Input Capacitance
C
ibo
90 Typical
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
15 Typical
pF
V
CE
=10V, f=1MHz
Switching Times
t
on
0.5 Typical
s
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
1.6 Typical
s
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
3 - 325
SM-8
(8 LEAD SOT223)
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
ol
ts)
0
0.4
0.01
0.1
10
1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
+
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
- (V
ol
ts)
0.6
0.01
10
0.1
1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
/I
B
=100
I
C
/I
B
=100
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
- G
a
in
n
or
m
a
l
i
se
d t
o 1

A
m
p
0.001
0.01
10
0.1
1
0.5
1.0
1.5
2.0
2.5
V
CE
=5V
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
- (V
o
lts)
0.6
1.0
1.4
1.8
0.01
0.1
1
10
V
CE
=5V
-55C
+25C
+100C
0.4
0.8
1.2
1.6
2.2
0.2
-55C
+25C
+100C
+175C
-55C
+25C
+100C
+175C
0.4
-55C
+25C
+100C
2.2
2.0
ZDT605
3 - 326