SM-8 COMPLEMENTARY MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T6718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPN
PNP
UNIT
Collector-Base Voltage
V
CBO
20
-20
V
Collector-Emitter Voltage
V
CEO
20
-20
V
Emitter-Base Voltage
V
EBO
5
-5
V
Peak Pulse Current
I
CM
6
-6
A
Continuous Collector Current
I
C
2
-1.5
A
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2
2.5
W
W
Derate above 25C*
Any single die on
Both die on equally
16
20
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
62.5
50
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6718
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
NPN
PNP
3 - 372
SM-8
(8 LEAD SOT223)
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20
100
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
27
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.3
V
I
E
=100
A
Collector Cutoff
Current
I
CBO
100
nA
V
CB
=16V
Emitter Cutoff Current I
EBO
100
nA
V
EB
=4V
Collector Emitter
Cutoff Current
I
CES
100
nA
V
CES
=16V
Collector-Emitter
Saturation Voltage
V
CE(sat)
7
70
130
15
150
200
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89
1.0
V
I
C
=2.5A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.79
1.0
V
I
C
=2.5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
100
400
450
360
180
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
23
30
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
on
170
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time
t
off
400
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see SuperSOT FMMT618 datasheet.
ZDT6718
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-20
-65
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20
-55
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.8
V
I
E
=-100
A
Collector Cutoff
Current
I
CBO
-100
nA
V
CB
=-15V
Emitter Cutoff
Current
I
EBO
-100
nA
V
EB
=-4V
Collector Emitter
Cutoff Current
I
CES
-100
nA
V
CES
=-15V
Collector-Emitter
Saturation Voltage
V
CE(SAT)
-16
-130
-145
-40
-200
-220
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(SAT)
-0.87 -1.0
V
I
C
=-1.5A, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(ON)
-0.81 -1.0
V
I
C
=-2A, V
CE
=-2V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
150
50
15
475
450
230
70
30
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition
Frequency
f
T
150
180
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
on
40
V
CC
=-10V, I
C
=-1A
I
B1
=I
B2
=20mA
Turn-Off Time
t
off
670
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see SuperSOT FMMT718 datasheet.
ZDT6718
3 - 374
3 - 373
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
20
100
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
27
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.3
V
I
E
=100
A
Collector Cutoff
Current
I
CBO
100
nA
V
CB
=16V
Emitter Cutoff Current I
EBO
100
nA
V
EB
=4V
Collector Emitter
Cutoff Current
I
CES
100
nA
V
CES
=16V
Collector-Emitter
Saturation Voltage
V
CE(sat)
7
70
130
15
150
200
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2.5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89
1.0
V
I
C
=2.5A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.79
1.0
V
I
C
=2.5A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
100
400
450
360
180
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition
Frequency
f
T
100
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
23
30
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
on
170
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
Turn-Off Time
t
off
400
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see SuperSOT FMMT618 datasheet.
ZDT6718
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-20
-65
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-20
-55
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.8
V
I
E
=-100
A
Collector Cutoff
Current
I
CBO
-100
nA
V
CB
=-15V
Emitter Cutoff
Current
I
EBO
-100
nA
V
EB
=-4V
Collector Emitter
Cutoff Current
I
CES
-100
nA
V
CES
=-15V
Collector-Emitter
Saturation Voltage
V
CE(SAT)
-16
-130
-145
-40
-200
-220
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(SAT)
-0.87 -1.0
V
I
C
=-1.5A, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(ON)
-0.81 -1.0
V
I
C
=-2A, V
CE
=-2V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
150
50
15
475
450
230
70
30
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition
Frequency
f
T
150
180
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
on
40
V
CC
=-10V, I
C
=-1A
I
B1
=I
B2
=20mA
Turn-Off Time
t
off
670
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see SuperSOT FMMT718 datasheet.
ZDT6718
3 - 374
3 - 373
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