SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T717
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-10
A
Continuous Collector Current
I
C
-2.5
A
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2
2.5
W
W
Derate above 25C*
Any single die on
Both die on equally
16
20
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
62.5
50
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT717
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-12
-35
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-12
-25
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
A
Collector Cutoff
Current
I
CBO
-100
nA
V
CB
=-10V
Emitter Cutoff
Current
I
EBO
-100
nA
V
EB
=-4V
Collector Emitter
Cutoff Current
I
CES
-100
nA
V
CES
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-10
-100
-110
-180
-17
-140
-170
-220
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.0
V
I
C
=-2.5A, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-2.5A, V
CE
=-2V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
180
60
45
475
450
275
100
70
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
Transition
Frequency
f
T
80
110
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
on
70
ns
V
CC
=-6V, I
C
=-2A
I
B1
=I
B2
=50mA
Turn-Off Time
t
off
130
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT717
3 - 348
3 - 349
SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T717
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-10
A
Continuous Collector Current
I
C
-2.5
A
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die on
Both die on equally
P
tot
2
2.5
W
W
Derate above 25C*
Any single die on
Both die on equally
16
20
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
62.5
50
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT717
SM-8
(8 LEAD SOT223)
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-12
-35
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-12
-25
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
A
Collector Cutoff
Current
I
CBO
-100
nA
V
CB
=-10V
Emitter Cutoff
Current
I
EBO
-100
nA
V
EB
=-4V
Collector Emitter
Cutoff Current
I
CES
-100
nA
V
CES
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-10
-100
-110
-180
-17
-140
-170
-220
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
-1.0
V
I
C
=-2.5A, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-2.5A, V
CE
=-2V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
180
60
45
475
450
275
100
70
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
Transition
Frequency
f
T
80
110
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
on
70
ns
V
CC
=-6V, I
C
=-2A
I
B1
=I
B2
=50mA
Turn-Off Time
t
off
130
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT717
3 - 348
3 - 349
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