SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ISSUE 1 - JULY 1999
PARTMARKING DETAIL T795A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-140
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-1
A
Continuous Collector Current
I
C
-0.5
A
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at T
amb
= 25C*
Any single die "on"
Both die "on" equally
P
tot
2.25
2.75
W
W
Derate above 25C*
Any single die "on"
Both die "on" equally
18
22
mW/ C
mW/ C
Thermal Resistance - Junction to Ambient*
Any single die "on"
Both die "on" equally
55.6
45.5
C/ W
C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT795A
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-140
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-140
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A, I
C
=0
Collector Cutoff
Current
I
CBO
-0.1
A
V
CB
=-100V
Emitter Cutoff Current
I
EBO
-0.1
A
V
EB
=-4V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.3
-0.25
V
V
V
I
C
=-100mA, I
B
=-1mA*
I
C
=-200mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.95
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75
V
I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
100
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-200mA, V
CE
=-2V*
I
C
=-300mA, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-50mA, V
CE
=-5V
f=50MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V f=1MHz
Switching Times
t
on
100
ns
I
C
=-100mA, V
CC
=-50V
I
B1
=I
B2
=-10mA
t
off
1900
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZDT795A
ZDT795A
0.01
0.1
1
10
0.8
0.6
0
1.6
0.01
0.1
1
10
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
I
C
- Collector Current (Amps)
I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
V
B
E
-
(
V
o
l
t
s
)
750
500
250
h
F
E
-
T
y
p
i
c
a
l
G
a
i
n
T
amb
=25C
-55C
+25C
+100C
+175C
0
+100C
+25C
-55C
0.01
0.1
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
B
E
(
s
a
t
)
-
(
V
o
l
t
s
)
-55C
+25C
+100C
+175C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55C
+25C
+100C
0.001
I
C
/I
B
=10
I
C
/I
B
=40
I
C
/I
B
=20
0.001
I
C
/I
B
=40
V
CE
=2V
V
CE
=2V
I
C
/I
B
=10
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