SOT323 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1 DECEMBER 1998
FEATURES:
Low
V
F
& High Current Capability
APPLICATIONS
: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
30
V
Forward Current
I
F
200
mA
Forward Voltage @ I
F
=10mA
V
F
400
mV
Repetitive Peak Forward Current
I
FRM
300
mA
Non Repetitive Forward Current t<1s
I
FSM
600
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Storage Temperature Range
T
stg
-55 to +150
C
JunctionTemperature
T
j
125
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown Voltage
V
(BR)R
30
50
V
I
R
=10
A
Forward Voltage
V
F
135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current
I
R
1.4
2
A
V
R
=25V
Diode Capacitance
C
D
7.5
10
pF
f=1MHz,V
R
=1V
Reverse Recovery
Time
t
rr
5
ns
switched from
I
F
=10mA to I
R
=10mA
R
L
=100
, I
R
=1mA
Dual Device; For simultaneous continuous use T
j
=100C.
1
3
2
3
1
1
3
2
ZUMD54
ZUMD54C
SINGLE
COMMON CATHODE
ZUMD54
ZUMD54C
Partmark: D8
Partmark: D8C
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