1
ISSUE 1 - MARCH 2001
ZVN4525G
SUMMARY
(
DESCRIPTION
This 250V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT23-6 versions are also available.
FEATURES
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary P-channel Type ZVP4525G
SOT223 package
APPLICATIONS
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZVN4525GTA
7
8mm embossed
1000 units
ZVN4525GTC
13
8mm embossed
4000 units
DEVICE MARKING
ZVN4525G
250V N-CHANNEL ENHANCEMENT MODE MOSFET
D
D
S
G
Top View
SOT223
ISSUE 1 - MARCH 2001
ZVN4525G
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
250
V
Gate Source Voltage
V
GS
40
V
Continuous Drain Current (V
GS
=10V; TA=25C)(a)
(V
GS
=10V; TA=70C)(a)
I
D
I
D
310
248
mA
mA
Pulsed Drain Current (c)
I
DM
1.44
A
Continuous Source Current (Body Diode)
I
S
1.1
A
Pulsed Source Current (Body Diode)
I
SM
1.44
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
2
16
W
mW/C
Operating and Storage Temperature Range
T
j
:
T
stg
-55 to +150
C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
63
C/W
Junction to Ambient (b)
R
JA
26
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 1 - MARCH 2001
ZVN4525G
3
CHARACTERISTICS
ISSUE 1 - MARCH 2001
ZVN4525G
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNI
T
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
250
285
V
I
D
=1mA, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
35
500
nA
V
DS
=250V, V
GS
=0V
Gate-Body Leakage
I
GSS
1
100
nA
V
GS
=
40V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.8
1.4
1.8
V
I
D
=1mA, V
DS
= V
GS
Static Drain-Source On-State Resistance (1)
R
DS(on)
5.6
5.9
6.4
8.5
9.0
9.5
V
GS
=10V, I
D
=500mA
V
GS
=4.5V, I
D
=360mA
V
GS
=2.4V, I
D
=20mA
Forward Transconductance (3)
g
fs
0.3
0.475
S
V
DS
=10V,I
D
=0.3A
DYNAMIC (3)
Input Capacitance
C
iss
72
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
11
pF
Reverse Transfer Capacitance
C
rss
3.6
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
1.25
ns
V
DD
=30V, I
D
=360mA
R
G
=50
, V
GS
=10V
(refer to test circuit)
Rise Time
t
r
1.70
ns
Turn-Off Delay Time
t
d(off)
11.40
ns
Fall Time
t
f
3.50
ns
Total Gate Charge
Q
g
2.6
3.65
nC
V
DS
=25V,V
GS
=10V,
I
D
=360mA(refer to
test circuit)
Gate-Source Charge
Q
gs
0.2
0.28
nC
Gate Drain Charge
Q
gd
0.5
0.70
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.97
V
T
j
=25C, I
S
=360mA,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
186
260
ns
T
j
=25C, I
F
=360mA,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
rr
34
48
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2001
ZVN4525G
5
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2001
ZVN4525G
6
CHARACTERISTICS
ISSUE 1 - MARCH 2001
ZVN4525G
7
CHARACTERISTICS
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 1 - MARCH 2001
ZVN4525G
8
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstrae 19
47 Mall Drive, Unit 4
3701-04 Metroplaza, Tower 1
agents and distributors in
D-81673 Mnchen
Commack NY 11725
Hing Fong Road,
major countries world-wide
Germany
USA
Kwai Fong, Hong Kong
Zetex plc 2000
Telefon: (49) 89 45 49 49 0
Telephone: (631) 543-7100
Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49
Fax: (631) 864-7630
Fax: (852) 24250 494
www.zetex.com
Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Dim
Millimeters
Inches
Min
Max
Min
Max
A
6.3
6.7
0.248
0.264
B
3.3
3.7
0.130
0.146
C
1.7
0.067
D
0.6
0.8
0.024
0.031
E
2.9
3.1
0.114
0.122
F
0.24
0.32
0.009
0.013
G
NOM 4.6
NOM 0.181
H
0.85
1.05
0.033
0.041
K
0.02
0.10
0.0008
0.004
L
6.7
7.3
0.264
0.287
M
NOM 2.3
NOM 0.0905
2.0 min
2.3
1.5 min
(3x)
(3x)
4.6
6.8
3.8 min
2.0 min
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