IS41LV44002-60JI ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV44002A ICSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002A-50J ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IS41LV44002A-50JI ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IS41LV44002A-50JL ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IS41LV44002A-50JLI ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IS41LV44002A-60J ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IS41LV44002A-60JL ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IS41LV44002A-60JLI ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV44002A is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV44002A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV44002A i
IS41LV44002AS(L) ICSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002B ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002B-50J ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002B-50JL ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002B-50T ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44004 ICSI - 4Mx4 bit Dynamic RAM with EDO Page Mode
IS41LV44004-50J ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV44004-50JI ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV44004-60J ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV44004-60JI ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV4400X ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV4400X ISSI - 4m X 4 (16mb) Dynamic RAM With Edo Page Mode
IS41LV44052 ISSI - 16mb DRAM With Fast Page Mode: 4mx4
IS41LV44052-50J ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV44052-50JI ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV44052-60J ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV44052-60JI ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV44054 ISSI - 16mb DRAM With Fast Page Mode: 4mx4
IS41LV44054-50J ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV44054-50JI ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV44054-60J ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV44054-60JI ISSI - 3.3V 4M X 4(16-MBIT) Dynamic RAM With Fast Page Mode
IS41LV4405X ISSI - 4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV8200 ISSI - 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV8200-50J ISSI - 3.3V 2M X 8(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV8200-50JI ISSI - 3.3V 2M X 8(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV8200-60J ISSI - 3.3V 2M X 8(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV8200-60JI ISSI - 3.3V 2M X 8(16-MBIT) Dynamic RAM With Edo Page Mode
IS41LV8200A ISSI - 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV8200A is 2,097,152 x 8-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV8200A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV8200A is p
IS41LV8200A-50J ISSI - 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV8200A is 2,097,152 x 8-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV8200A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV8200A is p
IS41LV8200A-50JL ISSI - 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV8200A is 2,097,152 x 8-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV8200A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV8200A is p
IS41LV8200A-60J ISSI - 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV8200A is 2,097,152 x 8-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV8200A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV8200A is p
IS41LV8200A-60JL ISSI - 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV8200A is 2,097,152 x 8-bit high-performanceCMOS Dynamic Random Access Memory. Thesedevices offer an accelerated cycle access called EDOPage Mode. EDO Page Mode allows 2,048 random accesseswithinA single row with access cycle time as shortas 20 ns per 4-bit word.These features make the IS41LV8200A ideally suited forhigh-bandwidth graphics, digital signal processing, highperformancecomputing systems, and peripheralapplications.The IS41LV8200A is p
IS41LV85120A-60K ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41C85120A and IS41LV85120A are 524,288 x 8-bit high-performance CMOS Dynamic Random AccessMemory. Both products offer accelerated cycle access EDOPage Mode. EDO Page Mode allows 512 random accesseswithinA single row with access cycle time as short as 10ns per8-bit word. The Byte Write control, of upper and lower byte,makes the IS41C85120A and IS41LV85120A ideal for use in16 and 32-bit wide data bus systems.
IS41LV85120A-60KL ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41C85120A and IS41LV85120A are 524,288 x 8-bit high-performance CMOS Dynamic Random AccessMemory. Both products offer accelerated cycle access EDOPage Mode. EDO Page Mode allows 512 random accesseswithinA single row with access cycle time as short as 10ns per8-bit word. The Byte Write control, of upper and lower byte,makes the IS41C85120A and IS41LV85120A ideal for use in16 and 32-bit wide data bus systems.
IS41LV85120B ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV85120B-60K ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV85120B-60KL ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV85125A-60K ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODEThe ISSI IS41C85125A and IS41LV85125A are 512,288 x 8-bit high-performance CMOS Dynamic Random AccessMemories. Fast Page Mode allows 1024 random accesseswithinA single row with access cycle time as short as 12ns per 8-bit word.
IS41LV85125A-60KL ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODEThe ISSI IS41C85125A and IS41LV85125A are 512,288 x 8-bit high-performance CMOS Dynamic Random AccessMemories. Fast Page Mode allows 1024 random accesseswithinA single row with access cycle time as short as 12ns per 8-bit word.
IS41LV85125B ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV85125B-60K ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41LV85125B-60KL ISSI - 512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS42G32256-7PQ ISSI - 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
IS42G32256-8PQ ISSI - 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM
IS42LS16800A ICSI - 16meg X 8, 8meg X16 & 4meg X 32 128-mbit Synchronous Dram
IS42LS16800A-10B ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS16800A-10BI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS16800A-10T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS16800A-10TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS16800A-7B ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS16800A-7BI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS16800A-7T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS16800A-7TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-10B ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-10BI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-10T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-10TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7B ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7BI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS32400A-7TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS81600A ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS81600A-10T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS81600A-10TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS81600A-7T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42LS81600A-7TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42R16100C1 ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42R16100C1 isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42R32200C1 ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMThe 64Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 2.5Vmemory systems containing 67,108,864 bits. Internallyconfigured asA quad-bank DRAM withA synchronousinterface. Each 16,777,216-bit bank is organized as 2,048rows by 256 columns by 32 bits.The 64Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK.All inputs an
IS42R32200C1-75T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMThe 64Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 2.5Vmemory systems containing 67,108,864 bits. Internallyconfigured asA quad-bank DRAM withA synchronousinterface. Each 16,777,216-bit bank is organized as 2,048rows by 256 columns by 32 bits.The 64Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK.All inputs an
IS42R32200C1-75TL ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMThe 64Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 2.5Vmemory systems containing 67,108,864 bits. Internallyconfigured asA quad-bank DRAM withA synchronousinterface. Each 16,777,216-bit bank is organized as 2,048rows by 256 columns by 32 bits.The 64Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK.All inputs an
IS42R32200C1-75TLI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMThe 64Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 2.5Vmemory systems containing 67,108,864 bits. Internallyconfigured asA quad-bank DRAM withA synchronousinterface. Each 16,777,216-bit bank is organized as 2,048rows by 256 columns by 32 bits.The 64Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK.All inputs an
IS42S16128-12T ISSI - 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16128-8T ISSI - 128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16160A1-6T ISSI - 256 Mb Synchronous DRAMIS42S83200A1 isA synchronous 256Mb SDRAM and isorganized as 4-bank x 8,388,608-word x 8-bit; andIS42S16160A1 is organized as 4-bank x 4,194,304-word x16-bit. All inputs and outputs are referencedto the risingedge of CLK.
IS42S16160A1-6TL ISSI - 256 Mb Synchronous DRAMIS42S83200A1 isA synchronous 256Mb SDRAM and isorganized as 4-bank x 8,388,608-word x 8-bit; andIS42S16160A1 is organized as 4-bank x 4,194,304-word x16-bit. All inputs and outputs are referencedto the risingedge of CLK.
IS42S16160A1-7T ISSI - 256 Mb Synchronous DRAMIS42S83200A1 isA synchronous 256Mb SDRAM and isorganized as 4-bank x 8,388,608-word x 8-bit; andIS42S16160A1 is organized as 4-bank x 4,194,304-word x16-bit. All inputs and outputs are referencedto the risingedge of CLK.
IS42S16160A-6TL ISSI - 256 Mb Synchronous DRAMIS42S83200A isA synchronous 256Mb SDRAM and isorganized as 4-bank x 8,388,608-word x 8-bit; andIS42S16160A is organized as 4-bank x 4,194,304-word x16-bit. All inputs and outputs are referencedto the risingedge of CLK.
IS42S16160B ISSI - 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160B-6T ISSI - 256-MBIT SYNCHRONOUS DRAMThe 256Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 268,435,456bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 67,108,864-bit bank is organizedas 8,192 rows by 512 columns by 16 bits or 8,192 rowsby 1,024 columns by 8 bits.
IS42S16160B-7T ISSI - 256-MBIT SYNCHRONOUS DRAMThe 256Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 268,435,456bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 67,108,864-bit bank is organizedas 8,192 rows by 512 columns by 16 bits or 8,192 rowsby 1,024 columns by 8 bits.
IS42S16400 ICSI - 2(1)m Words X 8(16) Bits X 4 Banks (64-mbit) Synchronous Dynamic Ram
IS42S16400-10T ISSI - 1M Bits X 16 Bits X 4 Banks(64-MBIT)synchronous Graphics RAM
IS42S16400-10TI ISSI - 1M Bits X 16 Bits X 4 Banks(64-MBIT)synchronous Graphics RAM
IS42S16400-6T ISSI - 1M Bits X 16 Bits X 4 Banks(64-MBIT)synchronous Graphics RAM
IS42S16400-7T ISSI - 1M Bits X 16 Bits X 4 Banks(64-MBIT)synchronous Graphics RAM
IS42S16400B Неопределенные - 1 Meg Bits X 16 Bits X 4 Banks (64-mbit) Synchronous Dynamic Ram
IS42S16400B1 ISSI - 1 Meg Bits X 16 Bits X 4 Banks (64-mbit) Synchronous Dynamic Ram
IS42S16400B1-7T ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400B-6T Неопределенные - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400B-6TL Неопределенные - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400B-7T Неопределенные - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400B-7TL Неопределенные - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1 ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-6T ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-6TL ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-7T ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400C1-7TL ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S16400C1 isorganized as 1,048,576 bits x 16-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve high-speeddata transfer using pipeline architecture. All inputs andoutputs signals refer to the rising edge of the clock input.
IS42S16400D ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-6T ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-6TL ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-7T ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16400D-7TL ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S16400D is organizedas 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transferusing pipeline architecture. All inputs and outputs signalsrefer to the rising edge of the clock input.
IS42S16400L ICSI - 2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram
IS42S16800A-6T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-6TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7B ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7BI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-7TLI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800AL-7B ISSI - 128-MBIT LOW-POWER SYNCHRONOUS DRAMThe 128Mb Low - Power SDRAM isA high speed CMOS,dynamic random-access memory designed to operate in2.5V VDD and 1.8V VDDQ or 3.3VVDD and 3.3V VDDQ memorysystems containing 134,217 ,728 bits. Internally configuredasA quad-bank DRAM withA synchronous interface. (Each33,554,432-bit bank is organized as 4,096 rows by 512columns by 16 bits.)The 128Mb Low - Power SDRAM includes an AUTO REFRESHMODE, andA power-saving, power-down mode.All signals are registered on the positive
IS42S16800AL-7T ISSI - 128-MBIT LOW-POWER SYNCHRONOUS DRAMThe 128Mb Low - Power SDRAM isA high speed CMOS,dynamic random-access memory designed to operate in2.5V VDD and 1.8V VDDQ or 3.3VVDD and 3.3V VDDQ memorysystems containing 134,217 ,728 bits. Internally configuredasA quad-bank DRAM withA synchronous interface. (Each33,554,432-bit bank is organized as 4,096 rows by 512columns by 16 bits.)The 128Mb Low - Power SDRAM includes an AUTO REFRESHMODE, andA power-saving, power-down mode.All signals are registered on the positive
IS42S16800B ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-6T ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-7T ISSI - 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 512 columns by 16 bits or 4,096 rowsby 1,024 columns by 8 bits.
IS42S32200 ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200-6T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200-6TI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200-7T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200-7TI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B ISSI - 512k Bits X 32 Bits X 4 Banks (64-mbit) Synchronous Dynamic Ram
IS42S32200B-6T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B-6TI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B-6TL ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B-6TLI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B-7T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B-7TI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B-7TL ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200B-7TLI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1 ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-55T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-55TL ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-6T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32200C1-6TI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-6TL ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-6TLI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-7B ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-7BI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-7BL ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-7T ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-7TL ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32200C1-7TLI ISSI - 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42S32200C1 isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve highspeeddata transfer using pipeline architecture. All inputsand outputs signals refer to the rising edge of the clockinput.
IS42S32400A ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10B ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10BI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10TI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10TLI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7B ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7BI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-7TLI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400AL ISSI - 128-MBIT LOW-POWER SYNCHRONOUS DRAMThe 128Mb Low - Power SDRAM isA high speed CMOS,dynamic random-access memory designed to operate in2.5V VDD and 1.8V VDDQ or 3.3VVDD and 3.3V VDDQ memorysystems containing 134,217 ,728 bits. Internally configuredasA quad-bank DRAM withA synchronous interface. (Each33,554,432-bit bank is organized as 4,096 rows by 512columns by 16 bits.)The 128Mb Low - Power SDRAM includes an AUTO REFRESHMODE, andA power-saving, power-down mode.All signals are registered on the positive
IS42S32400B ISSI - 4meg X 32 128-mbit Synchronous Dram
IS42S32400B-6B ISSI - 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32800B ISSI - 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6B ISSI - 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6BL ISSI - SYNCHRONOUS DYNAMIC RAMThe ISSI IS42S32800B isA high-speed CMOSconfigured asA quad 2M x 32 DRAM with asynchronous interface (all signals are registered on thepositive edge of the clock signal,CLK).Each of the 2M x 32 bit banks is organized as 4096 rowsby 512 columns by 32 bits.Read and write accesses startatA selected locations inA programmed sequence.Accesses begin with the registration ofA BankActivecommand which is then followed byA Read or Writecommand
IS42S32800B-6T ISSI - 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S32800B-6TL ISSI - 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S81600A ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-10T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-10T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-10TI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-10TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-10TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-6T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-6TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7T ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7T ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7TI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7TI ICSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7TL ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7TLI ISSI - 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600AL-10T ISSI - 128-MBIT LOW-POWER SYNCHRONOUS DRAMThe 128Mb Low - Power SDRAM isA high speed CMOS,dynamic random-access memory designed to operate in2.5V VDD and 1.8V VDDQ or 3.3VVDD and 3.3V VDDQ memorysystems containing 134,217 ,728 bits. Internally configuredasA quad-bank DRAM withA synchronous interface. (Each33,554,432-bit bank is organized as 4,096 rows by 512columns by 16 bits.)The 128Mb Low - Power SDRAM includes an AUTO REFRESHMODE, andA power-saving, power-down mode.All signals are registered on the positive
IS42S81600AL-7T ISSI - 128-MBIT LOW-POWER SYNCHRONOUS DRAMThe 128Mb Low - Power SDRAM isA high speed CMOS,dynamic random-access memory designed to operate in2.5V VDD and 1.8V VDDQ or 3.3VVDD and 3.3V VDDQ memorysystems containing 134,217 ,728 bits. Internally configuredasA quad-bank DRAM withA synchronous interface. (Each33,554,432-bit bank is organized as 4,096 rows by 512columns by 16 bits.)The 128Mb Low - Power SDRAM includes an AUTO REFRESHMODE, andA power-saving, power-down mode.All signals are registered on the positive
IS42S81600B-6T ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600B-7T ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S83200A1 ISSI - 256 Mb Synchronous DRAMIS42S83200A1 isA synchronous 256Mb SDRAM and isorganized as 4-bank x 8,388,608-word x 8-bit; andIS42S16160A1 is organized as 4-bank x 4,194,304-word x16-bit. All inputs and outputs are referencedto the risingedge of CLK.
IS42S83200A1-75T ISSI - 256 Mb Synchronous DRAMIS42S83200A1 isA synchronous 256Mb SDRAM and isorganized as 4-bank x 8,388,608-word x 8-bit; andIS42S16160A1 is organized as 4-bank x 4,194,304-word x16-bit. All inputs and outputs are referencedto the risingedge of CLK.
IS42VS16100C1 ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10T ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TI ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TL ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TLI ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100C1 isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-10T ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-10TE ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-10TL ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-10TLE ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-75T ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-75TE ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-75TL ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16100D-75TLE ISSI - SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS42VS16100D isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS42VS16400C1 ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10T ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TL ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-10TLI ISSI - SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42VS16400C1 isorganized as 1,048,576 bits x 16-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve high-speeddata transfer using pipeline architecture. All inputs andoutputs signals refer to the rising edge of the clock input.
IS42VS16400C1-12T ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1-12TI ISSI - SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42VS16400C1 isorganized as 1,048,576 bits x 16-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve high-speeddata transfer using pipeline architecture. All inputs andoutputs signals refer to the rising edge of the clock input.
IS42VS16400C1-12TL ISSI - SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42VS16400C1 isorganized as 1,048,576 bits x 16-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve high-speeddata transfer using pipeline architecture. All inputs andoutputs signals refer to the rising edge of the clock input.
IS42VS16400C1-12TLI ISSI - SYNCHRONOUS DYNAMIC RAMISSI\'s 64Mb Synchronous DRAM IS42VS16400C1 isorganized as 1,048,576 bits x 16-bit x 4-bank for improvedperformance. The synchronous DRAMs achieve high-speeddata transfer using pipeline architecture. All inputs andoutputs signals refer to the rising edge of the clock input.
IS431 SHARP - Totem Pole Output Type Opic Light Detector
IS432 SHARP - TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR
IS43R16800A ISSI - 128-MBIT DDR SDRAMISSI’s 128-Mbit DDR SDRAM achieves high-speed datatransfer using pipeline architecture and two data wordaccesses per clock cycle. The 134,217,728-bit memoryarray is internally organized as four banks of 32M-bit toallow concurrent operations. The pipeline allows Readand Write burst accesses to be virtually continuous, withthe option to concatenate or truncate the bursts. Theprogrammable features of burst length, burst sequenceand CAS latency enable further advantages. The deviceis available
IS43R16800A-5T ISSI - 128-MBIT DDR SDRAMISSI’s 128-Mbit DDR SDRAM achieves high-speed datatransfer using pipeline architecture and two data wordaccesses per clock cycle. The 134,217,728-bit memoryarray is internally organized as four banks of 32M-bit toallow concurrent operations. The pipeline allows Readand Write burst accesses to be virtually continuous, withthe option to concatenate or truncate the bursts. Theprogrammable features of burst length, burst sequenceand CAS latency enable further advantages. The deviceis available
IS43R16800A-5TL ISSI - 128-MBIT DDR SDRAMISSI’s 128-Mbit DDR SDRAM achieves high-speed datatransfer using pipeline architecture and two data wordaccesses per clock cycle. The 134,217,728-bit memoryarray is internally organized as four banks of 32M-bit toallow concurrent operations. The pipeline allows Readand Write burst accesses to be virtually continuous, withthe option to concatenate or truncate the bursts. Theprogrammable features of burst length, burst sequenceand CAS latency enable further advantages. The deviceis available
IS45S16100C1 ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1-7BLA ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1-7TA1 ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1-7TLA ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100C1-7TLA1 ISSI - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAMISSI’s 16Mb Synchronous DRAM IS45S16100C1 isorganized asA 524,288-word x 16-bit x 2-bank forimproved performance. The synchronous DRAMsachieve high-speed data transfer using pipelinearchitecture. All inputs and outputs signals refer to therising edge of the clock input.
IS45S16400C1 ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1-7TA1 ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1-7TLA ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16400C1-7TLA1 ISSI - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16800B ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S16800B-7TA1 ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 512 columns by 16 bits or 4,096 rowsby 1,024 columns by 8 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive
IS45S16800B-7TLA1 ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 512 columns by 16 bits or 4,096 rowsby 1,024 columns by 8 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive
IS45S32400B-7BA1 ISSI - 4Meg x 32 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 256 columns by 32 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK. Allinputs and outpu
IS45S32400B-7BLA1 ISSI - 4Meg x 32 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 256 columns by 32 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK. Allinputs and outpu
IS45S32400B-7TA1 ISSI - 4Meg x 32 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 256 columns by 32 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK. Allinputs and outpu
IS45S32400B-7TLA1 ISSI - 4Meg x 32 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 256 columns by 32 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive edge of the clock signal, CLK. Allinputs and outpu
IS45S81600B ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B-7TA ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B-7TA1 ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 512 columns by 16 bits or 4,096 rowsby 1,024 columns by 8 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive
IS45S81600B-7TLA ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS45S81600B-7TLA1 ISSI - 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAMThe 128Mb SDRAM isA high speed CMOS, dynamicrandom-access memory designed to operate in 3.3V VDDand 3.3V VDDQ memory systems containing 134,217,728bits. Internally configured asA quad-bank DRAM with asynchronous interface. Each 33,554,432-bit bank is organizedas 4,096 rows by 512 columns by 16 bits or 4,096 rowsby 1,024 columns by 8 bits.The 128Mb SDRAM includes an AUTO REFRESH MODE,andA power-saving, power-down mode. All signals areregistered on the positive
IS471F SHARP - Opic Light Detector With Built-in Signal Processing Circuit For Light Modulation System
IS474 SHARP - Linear Output Type Opic Light Detector
IS481 SHARP - Low Voltage Operating and High Sensitivity Type Opic Light Detectors
IS481 SHARP - Low Voltage Operating and High Sensitivity Type Opic Light Detectors
IS482 SHARP - Low Voltage Operating and High Sensitivity Type OPIC Light Detectors
IS485 SHARP - Bulit-in Amp. Type Opic Light Detector
IS486 SHARP - Bulit-in Amp. Type OPIC Light Detector
IS61C1024AL-12JI ISSI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C1024AL/IS64C1024AL isA very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. Theyare fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields higherperformance and low power consumption devices.
IS61C1024AL-12JLI ISSI - 128K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C1024AL/IS64C1024AL isA very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. Theyare fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields higherperformance and low power consumption devices.
IS61C3216AL-12KLI ISSI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C3216AL is high-speed, 512Kb static RAMsorganized as 32,768 words by 16 bits. They are fabricatedusing ISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption.
IS61C3216AL-12TI ISSI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C3216AL is high-speed, 512Kb static RAMsorganized as 32,768 words by 16 bits. They are fabricatedusing ISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption.
IS61C3216AL-12TLI ISSI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C3216AL is high-speed, 512Kb static RAMsorganized as 32,768 words by 16 bits. They are fabricatedusing ISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption.
IS61C64AL-10TLI ISSI - 8K x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61C64AL isA very high-speed, low power,8192-word by 8-bit static RAM. It is fabricated using ISSI\'shigh-performance CMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields access times as fast as 10 ns with low powerconsumption.
IS61C67-15N ISSI - 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61C67-20N ISSI - 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61C67-25N ISSI - 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61C67-L15N ISSI - 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61C67-L20N ISSI - 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61C67-L25N ISSI - 16K X 1 HIGH SPEED CMOS STATIC RAM
IS61DDB21M36 ISSI - DDR-II (Burst of 2) CIO Synchronous SRAMsThe 36Mb IS61DDB21M36 andIS61DDB22M18 are synchronous, high-performanceCMOS static random access memory(SRAM) devices. These SRAMs haveA common I/Obus. The rising edge of K clock initiates theread/write operation, and all internal operations areself-timed.
IS61DDB21M36-250M3 ISSI - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
IS61DDB22M18 ISSI - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
IS61DDB22M18-250M3 ISSI - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
IS61DDB41M36 ISSI - DDR-II (Burst of 4) CIO Synchronous SRAMsThe 36Mb IS61DDB41M36 and IS61DDB42M18are synchronous, high-performance CMOS staticrandom access memory (SRAM) devices. TheseSRAMs haveA common I/O bus. The rising edge ofK clock initiates the read/write operation, and allinternal operations are self-timed. Refer to theTiming Reference Diagram for Truth Table on p.8forA description of the basic operations of theseDDR-II (Burst of 4) CIO SRAMs.
IS61DDB41M36-250M3 ISSI - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
IS61DDB42M18 ISSI - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
IS61DDB42M18-250M3 ISSI - 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
IS61LF102418A ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-6.5B2 ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-6.5B2I ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-6.5B3 ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-6.5B3I ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-6.5TQ ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-6.5TQI ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-7.5TQ ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF102418A-7.5TQI ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF12832-7.5B ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832-7.5BI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832-7.5TQ ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832-7.5TQI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832-8.5B ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832-8.5BI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832-8.5TQ ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832-8.5TQI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12832A ISSI - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF12832A-6.5B2 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF12832A-6.5B3 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF12832A-6.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF12832A-7.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF12836-7.5B ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836-7.5BI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836-7.5TQ ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836-7.5TQI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836-8.5B ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836-8.5BI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836-8.5TQ ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836-8.5TQI ISSI - 128K X 32, 128K X 36 Synchronous Flow-through Static RAM
IS61LF12836A ISSI - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF12836A-6.5B2 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF12836A-6.5B3 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF12836A-6.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF12836A-7.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF25618A ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF25618A-6.5B2 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF25618A-6.5B3 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF25618A-7.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61LF25632T-9TQ ISSI - 256K X 32 Synchronous Flow-through Static RAM
IS61LF25632T-9TQI ISSI - 256K X 32 Synchronous Flow-through Static RAM
IS61LF25636A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF25636A-6.5B2 ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636A-6.5B2I ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636A-6.5B3 ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636A-6.5B3I ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636A-6.5TQ ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636A-6.5TQI ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636A-7.5TQ ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636A-7.5TQI ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF25636T-9TQ ISSI - 256K X 36 Synchronous Flow-through Static RAM
IS61LF25636T-9TQI ISSI - 256K X 36 Synchronous Flow-through Static RAM
IS61LF25672A ISSI - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51218A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51218A-6.5B2 ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218A-6.5B2I ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218A-6.5B3 ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218A-6.5B3I ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218A-6.5TQ ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218A-6.5TQI ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218A-7.5TQ ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218A-7.5TQI ISSI - 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25636A and IS61LF/VF51218A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. The IS61LF/VF25636A is organized as 262,144 words by 36 bits. TheIS61LF/VF51218A is organized as 524,288 words by 18bits. Fabricated with ISSI\'s advanced CMOS technology,the device integratesA 2-bit burst counter, high-speedSRAM core, and high-drive capability outputs into a
IS61LF51218T-9TQ ISSI - 512K X 18 Synchronous Flow-through Static RAM
IS61LF51218T-9TQI ISSI - 512K X 18 Synchronous Flow-through Static RAM
IS61LF51236A ISSI - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF51236A-6.5B2 ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF51236A-6.5B2I ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF51236A-6.5B3 ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF51236A-6.5B3I ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF51236A-6.5TQ ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF51236A-6.5TQI ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF51236A-7.5TQ ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF51236A-7.5TQI ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61LF6436A-8.5TQI ISSI - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF6432A and IS61LF6436A are high-speed,low-power synchronous static RAM designed to provide aburstable, high-performance, memory. IS61LF6432A isorganized as 65,536 words by 32 bits. IS61LF6436A isorganized as 65,536 words by 36 bits. They are fabricatedwith ISSI\'s advanced CMOS technology. The device integratesa 2-bit burst counter, high-speed SRAM core, andhigh-drive capability outputs intoA single monolithic circuit.All synchronous inputs
IS61LF6436A-8.5TQLI ISSI - 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF6432A and IS61LF6436A are high-speed,low-power synchronous static RAM designed to provide aburstable, high-performance, memory. IS61LF6432A isorganized as 65,536 words by 32 bits. IS61LF6436A isorganized as 65,536 words by 36 bits. They are fabricatedwith ISSI\'s advanced CMOS technology. The device integratesa 2-bit burst counter, high-speed SRAM core, andhigh-drive capability outputs intoA single monolithic circuit.All synchronous inputs
IS61LP6432A ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61LP6432A-133TQ ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61LP6432A-133TQI ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61LP6432A-133TQLI ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
IS61LP6436A ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61LP6436A-133TQ ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
IS61LP6436A-133TQI ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
IS61LP6436A-133TQLI ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
IS61LP6436A-166TQ ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
IS61LP6436A-166TQI ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
IS61LP6436A-166TQLI ISSI - 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAMThe ISSI IS61LP6432A/36A isA high-speed synchronousstatic RAM designed to provideA burstable, high-performancememory for high speed networking and communicationapplications. The IS61LP6432A is organized as 64Kwords by 32 bits and the IS61LP6436A is organized as 64Kwords by 36 bits. Fabricated with ISSI\'s advanced CMOStechnology, the device integratesA 2-bit burst counter, highspeedSRAM core, and high-drive capability outputs into asingle monolithic circ
IS61LPD102418A ISSI - 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD102418A-200B3 ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD102418A-200TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD102418A-200TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD102418A-250B3 ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD102418A-250B3I ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD102418A-250TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD102418A-250TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A ISSI - 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
IS61LPD51236A-200B3 ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A-200TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A-200TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A-200TQLI ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A-250B3 ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A-250B3I ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A-250TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPD51236A-250TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPD/VPD51236A and IS61LPD/VPD102418A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPD/VPD51236A is organized as 524,288 words by 36bits, and the IS61LPD/VPD102418A is organized as1,048,576 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and h
IS61LPS102418A-200TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS102418A-200TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS102418A-250B2 ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS102418A-250B2I ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS102418A-250B3 ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS102418A-250B3I ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS102418A-250TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS102418A-250TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS12832A ISSI - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12832A-200TQ ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12832A-200TQI ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12832A-250B2 ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12832A-250B2I ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12832A-250B3 ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12832A-250B3I ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12832A-250TQ ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12832A-250TQI ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12836A ISSI - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS12836A-200TQ ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12836A-250B2 ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12836A-250B3 ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS12836A-250TQ ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A ISSI - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25618A-200TQ ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A-200TQI ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A-250B2 ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A-250B2I ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A-250B3 ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A-250B3I ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A-250TQ ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25618A-250TQI ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61LPS25636A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25636A-200TQI ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25636A-250B2 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25636A-250B2I ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25636A-250B3 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25636A-250B3I ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25636A-250TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25636A-250TQI ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS25672A ISSI - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51218A-200TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51218A-200TQI ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51218A-250B2 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51218A-250B2I ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51218A-250B3 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51218A-250B3I ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51218A-250TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51218A-250TQI ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61LPS51236A ISSI - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS51236A-200TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS51236A-200TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS51236A-250B2 ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS51236A-250B2I ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS51236A-250B3 ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS51236A-250B3I ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS51236A-250TQ ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LPS51236A-250TQI ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61LV256AL-10JI ISSI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS61LV256AL isA very high-speed, low power,32,768-word by 8-bit static RAM. It is fabricated usingISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit designtechniques, yields access times as fast as 8 ns maximum.
IS61LV256AL-10JL ISSI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS61LV256AL isA very high-speed, low power,32,768-word by 8-bit static RAM. It is fabricated usingISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit designtechniques, yields access times as fast as 8 ns maximum.
IS61LV256AL-10JLI ISSI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS61LV256AL isA very high-speed, low power,32,768-word by 8-bit static RAM. It is fabricated usingISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit designtechniques, yields access times as fast as 8 ns maximum.
IS61LV256AL-10TI ISSI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS61LV256AL isA very high-speed, low power,32,768-word by 8-bit static RAM. It is fabricated usingISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit designtechniques, yields access times as fast as 8 ns maximum.
IS61LV256AL-10TLI ISSI - 32K x 8 LOW VOLTAGE CMOS STATIC RAMThe ISSI IS61LV256AL isA very high-speed, low power,32,768-word by 8-bit static RAM. It is fabricated usingISSI\'s high-performance CMOS technology. This highlyreliable process coupled with innovative circuit designtechniques, yields access times as fast as 8 ns maximum.
IS61LV3216 ISSI - 32k X 16 Low Voltage Cmos Static Ram
IS61LV3216-10 ISSI - 32Kx16 Low Voltage CMOS Static RAM
IS61LV3216-10K ISSI - 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-10T ISSI - 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV3216-12 ISSI - 32Kx16 Low Voltage CMOS Static RAM
IS61LV3216-12I ISSI - 32Kx16 Low Voltage CMOS Static RAM
IS61LV3216-12K ISSI - 32K x 16 LOW VOLTAGE CMOS STATIC RAM
IS61LV51216-10MLI ISSI - 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61/64LV51216 isA high-speed, 8M-bit staticRAM organized as 525,288 words by 16 bits. It is fabricatedusing ISSI\'s high-performance CMOS technology. Thishighly reliable process coupled with innovative circuit designtechniques, yields high-performance and low powerconsumption devices.
IS61LV6416 ICSI - 64k X 16 High Speed Cmos Static Ram With 3.3V Supply
IS61LV6416-10 ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10B ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10BI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10BLI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-10K ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10KI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10KLI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-10T ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10TI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-10TL ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-10TLI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-12K ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-12KI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-12KL ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-12T ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-12TI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-20K ISSI - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20KI ISSI - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20T ISSI - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-20TI ISSI - 64K X 16 High-speed CMOS Static RAM With 3.3V Supply
IS61LV6416-8B ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-8BI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-8K ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-8KI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-8KL ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416-8T ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-8TI ICSI - 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6416-8TL ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416/L ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8BI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8KI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8T ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6416L-8TI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLYThe ISSI IS61LV6416/IS61LV6416L isA high-speed,1,048,576-bit static RAM organized as 65,536 words by 16bits. It is fabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields access timesas fast as 8 ns with low power consumption.
IS61LV6424 ICSI - 64k X 24 High-speed Cmos Static Ram With 3.3v Supply
IS61LV6424-10 ICSI - 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424-10TQ ICSI - 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424-10TQI ISSI - 64K X 24 High-speed CMOS Static RAM With 3.3V Supply
IS61NW6432 ICSI - 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-5 ISSI - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-5PQ ICSI - 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-5TQ ICSI - 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-6 ISSI - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-6PQ ISSI - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-6TQ ICSI - 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-7 ISSI - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-7PQ ISSI - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-7TQ ISSI - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-8 ISSI - 64Kx32 Pipeline NO WAIT State Bus SRAM
IS61NW6432-8PQ ISSI - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61NW6432-8TQ ISSI - 64K X 32 Synchronous Static RAM With No-wait Srare Bus Feature
IS61QDB21M36 ISSI - QUAD (Burst of 2) Synchronous SRAMsThe 36Mb IS61QDB21Mx36 andIS61QDB22Mx18 are synchronous, high-performanceCMOS static random access memory(SRAM) devices. These SRAMs have separate I/Os,eliminating the need for high-speed bus turnaround.The rising edge of K clock initiates the read/writeoperation, and all internal operations are self-timed.Refer to the Timing Reference Diagram for TruthTable on page 8 forA description of the basic operationsof these SRAMs.
IS61QDB21M36-250M3 ISSI - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IS61QDB21M36-250M3L ISSI - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IS61QDB22M18 ISSI - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IS61QDB22M18-250M3 ISSI - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IS61QDB41M36 ISSI - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs
IS61QDB41M36-200M3 ISSI - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs
IS61QDB42M18-200M3 ISSI - 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs
IS61S6432 ICSI - 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61VF102418A ISSI - 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61LF/VF25672A, IS61LF/VF51236A andIS61LF/VF102418A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LF/VF25672A is organized as262,144 words by 72 bits. The IS61LF/VF51236A is organizedas 524,288 words by 36 bits. The IS61LF/VF102418Ais organized as 1,048,576 words by 18 bits. Fabricatedwith ISSI\'s advanced CMOS technology, the device integratesa 2-bi
IS61VF12836A ISSI - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF12836A-6.5B2 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF12836A-6.5B3 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF12836A-6.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF12836A-7.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF25618A ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF25618A-6.5B2 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF25618A-6.5B3 ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF25618A-6.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF25618A-7.5TQ ISSI - 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAMThe ISSI IS61(64)LF12832A, IS64VF12832A,IS61(64)LF/VF12836A and IS61(64)LF/VF25618A arehigh-speed, low-power synchronous static RAMs designedto provide burstable, high-performance memory for communicationand networking applications. TheIS61(64)LF12832A is organized as 131,072 words by 32bits. The IS61(64)LF/VF12836A is organized as 131,072words by 36 bits. The IS61(64)LF/VF25618A is organizedas 262,144 words by 18 bits. Fabricated with ISSI\'sadvanced CMOS technology,
IS61VF25636A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25672A ISSI - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF51218A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VPS102418A ISSI - 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS51236A, IS61LPS/VPS102418A,and IS61LPS/VPS25672A are high-speed, low-power synchronousstatic RAMs designed to provide burstable, highperformancememory for communication and networkingapplications. The IS61LPS/VPS51236A is organized as524,288 words by 36 bits, the IS61LPS/VPS102418A isorganized as 1,048,576 words by 18 bits, and the IS61LPS/VPS25672A is organized as 262,144 words by 72 bits.Fabricated with ISSI\'s advanced CMOS t
IS61VPS12836A ISSI - 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS25618A ISSI - 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61(64)LPS12832A, IS61(64)LPS/VPS12836Aand IS61(64)LPS/VPS25618A are high-speed, low-powersynchronous static RAMs designed to provide burstable,high-performance memory for communication and networkingapplications. The IS61(64)LPS12832A is organized as131,072 words by 32 bits. The IS61(64)LPS/VPS12836Ais organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits.Fabricated with ISSI\'s advance
IS61VPS25636A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS25636A-200TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25636A-250B2 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25636A-250B3 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25636A-250TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS25672A ISSI - 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS51218A ISSI - 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61VPS51218A-200TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS51218A-250B2 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS51218A-250B3 ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61VPS51218A-250TQ ISSI - 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAMThe ISSI IS61LPS/VPS25636A and IS61LPS/VPS51218A are high-speed, low-power synchronous staticRAMs designed to provide burstable, high-performance memoryfor communication and networking applications. TheIS61LPS/VPS25636A is organized as 262,144 words by36 bits and the IS61LPS/VPS51218A is organized as524,288 words by 18 bits. Fabricated with ISSI\'s advancedCMOS technology, the device integratesA 2-bitburst counter, high-speed SRAM core, and high-d
IS61WV12816BLL-12TI ISSI - 128K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV12816BLL and IS64WV12816BLL arehigh-speed, 2,097,152-bit static RAM organized as 131,072words by 16 bits. They are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldsaccess times as fast as 12 ns with low power consumption.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
IS61WV12816BLL-12TLI ISSI - 128K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV12816BLL and IS64WV12816BLL arehigh-speed, 2,097,152-bit static RAM organized as 131,072words by 16 bits. They are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques, yieldsaccess times as fast as 12 ns with low power consumption.When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
IS61WV20488 ISSI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488ALL-20MI ISSI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488ALL-20TI ISSI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488BLL-10MLI ISSI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488BLL-10TI ISSI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV20488BLL-10TLI ISSI - 2M x 8 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61WV20488ALL/BLL and IS64WV20488BLLare very high-speed, low power, 2M-word by 8-bit CMOSstatic RAM. The IS61WV20488ALL/BLL andIS64WV20488BLL are fabricated using ISSI\'s highperformanceCMOS technology. This highly reliableprocess coupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices.
IS61WV3216BLL ISSI - 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV3216BLL-12BI ISSI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS61WV3216BLL-12BLI ISSI - 32K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV3216BLL isA high-speed, 524,288-bitstatic RAM organized as 32,768 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS61WV6416BLL ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV6416BLL-12BI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV6416BLL isA high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
IS61WV6416BLL-12BLI ISSI - 64K x 16 HIGH-SPEED CMOS STATIC RAMThe ISSI IS61/64WV6416BLL isA high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It isfabricated using ISSI\'s high-performance CMOStechnology. This highly reliable process coupled with innovativecircuit design techniques, yields access times asfast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with lowpower consumption.
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