IRF6620TR1 - 20V Single N-channel HexFET Power MOSFET inA DirectFET Package Polarity N VBRdss (V) 20 RDS(on) 4.5V (mohms) 3.6 RDS(on) 10V (mohms) 2.7 ID @ 25C (A) 27 Id @ 100C (A) 22 QG TYP 28.0 QGD TYP 8.8 Rth(JC) 1.4 Power Dissipation (W) 89
IRF6621 - The Irf6621 Combines The Latest Hexfet Power Mosfet Silicon Technology With The Advanced Directfet Packaging To Achieve The Lowest On-state Resistance
IRF6622 - The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve thelowest combined on-state resistance and gate charge inA package that hasA footprint similar to that ofA Micro-8, and only 0.6mm profile.The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
IRF6622TR1 - The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve thelowest combined on-state resistance and gate charge inA package that hasA footprint similar to that ofA Micro-8, and only 0.6mm profile.The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
IRF6622TR1PBF - The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve thelowest combined on-state resistance and gate charge inA package that hasA footprint similar to that ofA Micro-8, and only 0.6mm profile.The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
IRF6622TRPBF - The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve thelowest combined on-state resistance and gate charge inA package that hasA footprint similar to that ofA Micro-8, and only 0.6mm profile.The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
IRF6623TR1 - 20V Single N-channel HexFET Power MOSFET inA DirectFET Package
IRF6628 - The IRF6628PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6628TR1PBF - The IRF6628PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6628TRPBF - The IRF6628PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6629 - The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6629TR1PBF - The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6629TRPBF - The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6631TR1 - The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve thelowest on-state resistance inA package that has the footprint ofA MICRO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6631TR1PBF - The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve thelowest on-state resistance inA package that has the footprint ofA MICRO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6631TRPBF - The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve thelowest on-state resistance inA package that has the footprint ofA MICRO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6638TR1PBF - The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
IRF6638TRPBF - The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance inA package that has the footprint ofA SO-8 and only 0.6 mm profile. The DirectFET package is compatiblewith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFE
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