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Components list, symbol «K», page 2

  1. K4H561638A-TLA0 Samsung - 128Mb DDR SDRAM
  2. K4H561638A-TLA2 Samsung - 128Mb DDR SDRAM
  3. K4H561638A-TLB0 Samsung - 128Mb DDR SDRAM
  4. K4H561638B Samsung - K4H560438B 256Mb DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = A2,B0,A0 ; Package = 66TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = DDR200/DDR266
  5. K4H561638B-TCA0 Samsung - 128Mb DDR SDRAM
  6. K4H561638B-TCA2 Samsung - 128Mb DDR SDRAM
  7. K4H561638B-TCB0 Samsung - 128Mb DDR SDRAM
  8. K4H561638B-TLA0 Samsung - 128Mb DDR SDRAM
  9. K4H561638B-TLA2 Samsung - 128Mb DDR SDRAM
  10. K4H561638B-TLB0 Samsung - 128Mb DDR SDRAM
  11. K4H561638C-TCA0 Samsung - 128Mb DDR SDRAM
  12. K4H561638C-TCA2 Samsung - 128Mb DDR SDRAM
  13. K4H561638C-TCB0 Samsung - 128Mb DDR SDRAM
  14. K4H561638C-TLA0 Samsung - 128Mb DDR SDRAM
  15. K4H561638C-TLA2 Samsung - 128Mb DDR SDRAM
  16. K4H561638C-TLB0 Samsung - 128Mb DDR SDRAM
  17. K4H561638D Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  18. K4H561638D-GCA2 Samsung - DDR 256Mb
  19. K4H561638D-GCB0 Samsung - DDR 256Mb
  20. K4H561638D-GCB3 Samsung - DDR 256Mb
  21. K4H561638D-GLA2 Samsung - DDR 256Mb
  22. K4H561638D-GLB0 Samsung - DDR 256Mb
  23. K4H561638D-GLB3 Samsung - DDR 256Mb
  24. K4H561638D-TCA0 Samsung - 128Mb DDR SDRAM
  25. K4H561638D-TCA2 Samsung - 128Mb DDR SDRAM
  26. K4H561638D-TCB0 Samsung - 128Mb DDR SDRAM
  27. K4H561638D-TCC4 Samsung - 256Mb D-die DDR400 SDRAM Specification
  28. K4H561638D-TCCC Samsung - 256Mb D-die DDR400 SDRAM Specification
  29. K4H561638D-TC/LA0 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  30. K4H561638D-TC/LA2 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  31. K4H561638D-TC/LB0 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  32. K4H561638D-TC/LB3 Samsung - K4H561638D 256Mb D-die DDR Sdram ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,A2,B0,A0 ; Package = 66TSOP2,54sTSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR200/266/333/400
  33. K4H561638D-TLA0 Samsung - 128Mb DDR SDRAM
  34. K4H561638D-TLA2 Samsung - 128Mb DDR SDRAM
  35. K4H561638D-TLB0 Samsung - 128Mb DDR SDRAM
  36. K4H561638E-TCA0 Samsung - 128Mb DDR SDRAM
  37. K4H561638E-TCA2 Samsung - 128Mb DDR SDRAM
  38. K4H561638E-TCB0 Samsung - 128Mb DDR SDRAM
  39. K4H561638E-TLA0 Samsung - 128Mb DDR SDRAM
  40. K4H561638E-TLA2 Samsung - 128Mb DDR SDRAM
  41. K4H561638E-TLB0 Samsung - 128Mb DDR SDRAM
  42. K4H561638F Samsung - 256Mb F-die DDR SDRAM Specification
  43. K4H561638F-TCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  44. K4H561638F-TCCC Samsung - 256Mb F-die DDR400 SDRAM Specification
  45. K4H561638F-TC/LA2 Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  46. K4H561638F-TC/LAA Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  47. K4H561638F-TC/LB0 Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  48. K4H561638F-TC/LB3 Samsung - K4H561638F DDR Sdram 256Mb F-die (x8, X16) ; Organization = 16Mx16 ; Bank/ Interface = 4B/SSTL2 ; Refresh = 8K/64ms ; Speed = CC,C4,B3,AA,A2,B0 ; Package = 66TSOP2,60FBGA ; Power = C,l ; Production Status = Mass Production ; Comments = DDR266/333/400
  49. K4H561638F-UC Samsung - 256mb F-die Ddr Sdram Specification
  50. K4H561638F-UCC4 Samsung - 256Mb F-die DDR400 SDRAM Specification
  51. K4H561638F-UCCC Samsung - 256Mb F-die DDR400 SDRAM Specification
  52. K4H561638M-TCA0 Samsung - 128Mb DDR SDRAM
  53. K4H561638M-TCA2 Samsung - 128Mb DDR SDRAM
  54. K4H561638M-TCB0 Samsung - 128Mb DDR SDRAM
  55. K4H561638M-TLA0 Samsung - 128Mb DDR SDRAM
  56. K4H561638M-TLA2 Samsung - 128Mb DDR SDRAM
  57. K4H561638M-TLB0 Samsung - 128Mb DDR SDRAM
  58. K4H563238A-TCA0 Samsung - 128Mb DDR SDRAM
  59. K4H563238A-TCA2 Samsung - 128Mb DDR SDRAM
  60. K4H563238A-TCB0 Samsung - 128Mb DDR SDRAM
  61. K4H563238A-TLA0 Samsung - 128Mb DDR SDRAM
  62. K4H563238A-TLA2 Samsung - 128Mb DDR SDRAM
  63. K4H563238A-TLB0 Samsung - 128Mb DDR SDRAM
  64. K4H563238B-TCA0 Samsung - 128Mb DDR SDRAM
  65. K4H563238B-TCA2 Samsung - 128Mb DDR SDRAM
  66. K4H563238B-TCB0 Samsung - 128Mb DDR SDRAM
  67. K4H563238B-TLA0 Samsung - 128Mb DDR SDRAM
  68. K4H563238B-TLA2 Samsung - 128Mb DDR SDRAM
  69. K4H563238B-TLB0 Samsung - 128Mb DDR SDRAM
  70. K4H563238C-TCA0 Samsung - 128Mb DDR SDRAM
  71. K4H563238C-TCA2 Samsung - 128Mb DDR SDRAM
  72. K4H563238C-TCB0 Samsung - 128Mb DDR SDRAM
  73. K4H563238C-TLA0 Samsung - 128Mb DDR SDRAM
  74. K4H563238C-TLA2 Samsung - 128Mb DDR SDRAM
  75. K4H563238C-TLB0 Samsung - 128Mb DDR SDRAM
  76. K4H563238D-TCA0 Samsung - 128Mb DDR SDRAM
  77. K4H563238D-TCA2 Samsung - 128Mb DDR SDRAM
  78. K4H563238D-TCB0 Samsung - 128Mb DDR SDRAM
  79. K4H563238D-TLA0 Samsung - 128Mb DDR SDRAM
  80. K4H563238D-TLA2 Samsung - 128Mb DDR SDRAM
  81. K4H563238D-TLB0 Samsung - 128Mb DDR SDRAM
  82. K4H563238E-TCA0 Samsung - 128Mb DDR SDRAM
  83. K4H563238E-TCA2 Samsung - 128Mb DDR SDRAM
  84. K4H563238E-TCB0 Samsung - 128Mb DDR SDRAM
  85. K4H563238E-TLA0 Samsung - 128Mb DDR SDRAM
  86. K4H563238E-TLA2 Samsung - 128Mb DDR SDRAM
  87. K4H563238E-TLB0 Samsung - 128Mb DDR SDRAM
  88. K4H563238M-TCA0 Samsung - 128Mb DDR SDRAM
  89. K4H563238M-TCA2 Samsung - 128Mb DDR SDRAM
  90. K4H563238M-TCB0 Samsung - 128Mb DDR SDRAM
  91. K4H563238M-TLA0 Samsung - 128Mb DDR SDRAM
  92. K4H563238M-TLA2 Samsung - 128Mb DDR SDRAM
  93. K4H563238M-TLB0 Samsung - 128Mb DDR SDRAM
  94. K4H640438A-TCA0 Samsung - 128Mb DDR SDRAM
  95. K4H640438A-TCA2 Samsung - 128Mb DDR SDRAM
  96. K4H640438A-TCB0 Samsung - 128Mb DDR SDRAM
  97. K4H640438A-TLA0 Samsung - 128Mb DDR SDRAM
  98. K4H640438A-TLA2 Samsung - 128Mb DDR SDRAM
  99. K4H640438A-TLB0 Samsung - 128Mb DDR SDRAM
  100. K4H640438B-TCA0 Samsung - 128Mb DDR SDRAM
  101. K4H640438B-TCA2 Samsung - 128Mb DDR SDRAM
  102. K4H640438B-TCB0 Samsung - 128Mb DDR SDRAM
  103. K4H640438B-TLA0 Samsung - 128Mb DDR SDRAM
  104. K4H640438B-TLA2 Samsung - 128Mb DDR SDRAM
  105. K4H640438B-TLB0 Samsung - 128Mb DDR SDRAM
  106. K4H640438C-TCA0 Samsung - 128Mb DDR SDRAM
  107. K4H640438C-TCA2 Samsung - 128Mb DDR SDRAM
  108. K4H640438C-TCB0 Samsung - 128Mb DDR SDRAM
  109. K4H640438C-TLA0 Samsung - 128Mb DDR SDRAM
  110. K4H640438C-TLA2 Samsung - 128Mb DDR SDRAM
  111. K4H640438C-TLB0 Samsung - 128Mb DDR SDRAM
  112. K4H640438D-TCA0 Samsung - 128Mb DDR SDRAM
  113. K4H640438D-TCA2 Samsung - 128Mb DDR SDRAM
  114. K4H640438D-TCB0 Samsung - 128Mb DDR SDRAM
  115. K4H640438D-TLA0 Samsung - 128Mb DDR SDRAM
  116. K4H640438D-TLA2 Samsung - 128Mb DDR SDRAM
  117. K4H640438D-TLB0 Samsung - 128Mb DDR SDRAM
  118. K4H640438E-TCA0 Samsung - 128Mb DDR SDRAM
  119. K4H640438E-TCA2 Samsung - 128Mb DDR SDRAM
  120. K4H640438E-TCB0 Samsung - 128Mb DDR SDRAM
  121. K4H640438E-TLA0 Samsung - 128Mb DDR SDRAM
  122. K4H640438E-TLA2 Samsung - 128Mb DDR SDRAM
  123. K4H640438E-TLB0 Samsung - 128Mb DDR SDRAM
  124. K4H640438M-TCA0 Samsung - 128Mb DDR SDRAM
  125. K4H640438M-TCA2 Samsung - 128Mb DDR SDRAM
  126. K4H640438M-TCB0 Samsung - 128Mb DDR SDRAM
  127. K4H640438M-TLA0 Samsung - 128Mb DDR SDRAM
  128. K4H640438M-TLA2 Samsung - 128Mb DDR SDRAM
  129. K4H640438M-TLB0 Samsung - 128Mb DDR SDRAM
  130. K4H640838A-TCA0 Samsung - 128Mb DDR SDRAM
  131. K4H640838A-TCA2 Samsung - 128Mb DDR SDRAM
  132. K4H640838A-TCB0 Samsung - 128Mb DDR SDRAM
  133. K4H640838A-TLA0 Samsung - 128Mb DDR SDRAM
  134. K4H640838A-TLA2 Samsung - 128Mb DDR SDRAM
  135. K4H640838A-TLB0 Samsung - 128Mb DDR SDRAM
  136. K4H640838B-TCA0 Samsung - 128Mb DDR SDRAM
  137. K4H640838B-TCA2 Samsung - 128Mb DDR SDRAM
  138. K4H640838B-TCB0 Samsung - 128Mb DDR SDRAM
  139. K4H640838B-TLA0 Samsung - 128Mb DDR SDRAM
  140. K4H640838B-TLA2 Samsung - 128Mb DDR SDRAM
  141. K4H640838B-TLB0 Samsung - 128Mb DDR SDRAM
  142. K4H640838C-TCA0 Samsung - 128Mb DDR SDRAM
  143. K4H640838C-TCA2 Samsung - 128Mb DDR SDRAM
  144. K4H640838C-TCB0 Samsung - 128Mb DDR SDRAM
  145. K4H640838C-TLA0 Samsung - 128Mb DDR SDRAM
  146. K4H640838C-TLA2 Samsung - 128Mb DDR SDRAM
  147. K4H640838C-TLB0 Samsung - 128Mb DDR SDRAM
  148. K4H640838D-TCA0 Samsung - 128Mb DDR SDRAM
  149. K4H640838D-TCA2 Samsung - 128Mb DDR SDRAM
  150. K4H640838D-TCB0 Samsung - 128Mb DDR SDRAM
  151. K4H640838D-TLA0 Samsung - 128Mb DDR SDRAM
  152. K4H640838D-TLA2 Samsung - 128Mb DDR SDRAM
  153. K4H640838D-TLB0 Samsung - 128Mb DDR SDRAM
  154. K4H640838E-TCA0 Samsung - 128Mb DDR SDRAM
  155. K4H640838E-TCA2 Samsung - 128Mb DDR SDRAM
  156. K4H640838E-TCB0 Samsung - 128Mb DDR SDRAM
  157. K4H640838E-TLA0 Samsung - 128Mb DDR SDRAM
  158. K4H640838E-TLA2 Samsung - 128Mb DDR SDRAM
  159. K4H640838E-TLB0 Samsung - 128Mb DDR SDRAM
  160. K4H640838M-TCA0 Samsung - 128Mb DDR SDRAM
  161. K4H640838M-TCA2 Samsung - 128Mb DDR SDRAM
  162. K4H640838M-TCB0 Samsung - 128Mb DDR SDRAM
  163. K4H640838M-TLA0 Samsung - 128Mb DDR SDRAM
  164. K4H640838M-TLA2 Samsung - 128Mb DDR SDRAM
  165. K4H640838M-TLB0 Samsung - 128Mb DDR SDRAM
  166. K4H641638A-TCA0 Samsung - 128Mb DDR SDRAM
  167. K4H641638A-TCA2 Samsung - 128Mb DDR SDRAM
  168. K4H641638A-TCB0 Samsung - 128Mb DDR SDRAM
  169. K4H641638A-TLA0 Samsung - 128Mb DDR SDRAM
  170. K4H641638A-TLA2 Samsung - 128Mb DDR SDRAM
  171. K4H641638A-TLB0 Samsung - 128Mb DDR SDRAM
  172. K4H641638B-TCA0 Samsung - 128Mb DDR SDRAM
  173. K4H641638B-TCA2 Samsung - 128Mb DDR SDRAM
  174. K4H641638B-TCB0 Samsung - 128Mb DDR SDRAM
  175. K4H641638B-TLA0 Samsung - 128Mb DDR SDRAM
  176. K4H641638B-TLA2 Samsung - 128Mb DDR SDRAM
  177. K4H641638B-TLB0 Samsung - 128Mb DDR SDRAM
  178. K4H641638C-TCA0 Samsung - 128Mb DDR SDRAM
  179. K4H641638C-TCA2 Samsung - 128Mb DDR SDRAM
  180. K4H641638C-TCB0 Samsung - 128Mb DDR SDRAM
  181. K4H641638C-TLA0 Samsung - 128Mb DDR SDRAM
  182. K4H641638C-TLA2 Samsung - 128Mb DDR SDRAM
  183. K4H641638C-TLB0 Samsung - 128Mb DDR SDRAM
  184. K4H641638D-TCA0 Samsung - 128Mb DDR SDRAM
  185. K4H641638D-TCA2 Samsung - 128Mb DDR SDRAM
  186. K4H641638D-TCB0 Samsung - 128Mb DDR SDRAM
  187. K4H641638D-TLA0 Samsung - 128Mb DDR SDRAM
  188. K4H641638D-TLA2 Samsung - 128Mb DDR SDRAM
  189. K4H641638D-TLB0 Samsung - 128Mb DDR SDRAM
  190. K4H641638E-TCA0 Samsung - 128Mb DDR SDRAM
  191. K4H641638E-TCA2 Samsung - 128Mb DDR SDRAM
  192. K4H641638E-TCB0 Samsung - 128Mb DDR SDRAM
  193. K4H641638E-TLA0 Samsung - 128Mb DDR SDRAM
  194. K4H641638E-TLA2 Samsung - 128Mb DDR SDRAM
  195. K4H641638E-TLB0 Samsung - 128Mb DDR SDRAM
  196. K4H641638M-TCA0 Samsung - 128Mb DDR SDRAM
  197. K4H641638M-TCA2 Samsung - 128Mb DDR SDRAM
  198. K4H641638M-TCB0 Samsung - 128Mb DDR SDRAM
  199. K4H641638M-TLA0 Samsung - 128Mb DDR SDRAM
  200. K4H641638M-TLA2 Samsung - 128Mb DDR SDRAM
  201. K4H641638M-TLB0 Samsung - 128Mb DDR SDRAM
  202. K4H643238A-TCA0 Samsung - 128Mb DDR SDRAM
  203. K4H643238A-TCA2 Samsung - 128Mb DDR SDRAM
  204. K4H643238A-TCB0 Samsung - 128Mb DDR SDRAM
  205. K4H643238A-TLA0 Samsung - 128Mb DDR SDRAM
  206. K4H643238A-TLA2 Samsung - 128Mb DDR SDRAM
  207. K4H643238A-TLB0 Samsung - 128Mb DDR SDRAM
  208. K4H643238B-TCA0 Samsung - 128Mb DDR SDRAM
  209. K4H643238B-TCA2 Samsung - 128Mb DDR SDRAM
  210. K4H643238B-TCB0 Samsung - 128Mb DDR SDRAM
  211. K4H643238B-TLA0 Samsung - 128Mb DDR SDRAM
  212. K4H643238B-TLA2 Samsung - 128Mb DDR SDRAM
  213. K4H643238B-TLB0 Samsung - 128Mb DDR SDRAM
  214. K4H643238C-TCA0 Samsung - 128Mb DDR SDRAM
  215. K4H643238C-TCA2 Samsung - 128Mb DDR SDRAM
  216. K4H643238C-TCB0 Samsung - 128Mb DDR SDRAM
  217. K4H643238C-TLA0 Samsung - 128Mb DDR SDRAM
  218. K4H643238C-TLA2 Samsung - 128Mb DDR SDRAM
  219. K4H643238C-TLB0 Samsung - 128Mb DDR SDRAM
  220. K4H643238D-TCA0 Samsung - 128Mb DDR SDRAM
  221. K4H643238D-TCA2 Samsung - 128Mb DDR SDRAM
  222. K4H643238D-TCB0 Samsung - 128Mb DDR SDRAM
  223. K4H643238D-TLA0 Samsung - 128Mb DDR SDRAM
  224. K4H643238D-TLA2 Samsung - 128Mb DDR SDRAM
  225. K4H643238D-TLB0 Samsung - 128Mb DDR SDRAM
  226. K4H643238E-TCA0 Samsung - 128Mb DDR SDRAM
  227. K4H643238E-TCA2 Samsung - 128Mb DDR SDRAM
  228. K4H643238E-TCB0 Samsung - 128Mb DDR SDRAM
  229. K4H643238E-TLA0 Samsung - 128Mb DDR SDRAM
  230. K4H643238E-TLA2 Samsung - 128Mb DDR SDRAM
  231. K4H643238E-TLB0 Samsung - 128Mb DDR SDRAM
  232. K4H643238M-TCA0 Samsung - 128Mb DDR SDRAM
  233. K4H643238M-TCA2 Samsung - 128Mb DDR SDRAM
  234. K4H643238M-TCB0 Samsung - 128Mb DDR SDRAM
  235. K4H643238M-TLA0 Samsung - 128Mb DDR SDRAM
  236. K4H643238M-TLA2 Samsung - 128Mb DDR SDRAM
  237. K4H643238M-TLB0 Samsung - 128Mb DDR SDRAM
  238. K4J52324QC Samsung - 512Mbit GDDR3 SDRAM
  239. K4J52324QC-BC14 Samsung - 512mbit Gddr3 Sdram
  240. K4J52324QC-BC16 Samsung - 512Mbit GDDR3 SDRAM
  241. K4J52324QC-BC20 Samsung - 512Mbit GDDR3 SDRAM
  242. K4J52324QC-BJ12 Samsung - 512Mbit GDDR3 SDRAM
  243. K4J52324QC-BJ14 Samsung - 512Mbit GDDR3 SDRAM
  244. K4J55323QF-GC15 Samsung - 256mbit Gddr3 Sdram
  245. K4J55323QF-GC16 Samsung - 256Mbit GDDR3 SDRAM
  246. K4J55323QG Samsung - 256Mbit GDDR3 SDRAM
  247. K4J55323QG-BC12 Samsung - 256Mbit GDDR3 SDRAM
  248. K4J55323QG-BC14 Samsung - 256Mbit GDDR3 SDRAM
  249. K4J55323QG-BC16 Samsung - 256Mbit GDDR3 SDRAM
  250. K4J55323QG-BC20 Samsung - 256mbit Gddr3 Sdram
  251. K4-LFCN+ Mini-Circuits - KIT FILTER / SURF MT/T&R/ RoHS
  252. K4M281633F Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  253. K4M281633F-C Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  254. K4M281633F-F1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  255. K4M281633F-G Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  256. K4M281633F-L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  257. K4M281633F-N Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  258. K4M281633F-R(B)E/N/G/C/L/F1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  259. K4M281633F-R(B)E/N/G/C/L/F1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  260. K4M281633F-R(B)E/N/G/C/L/F75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  261. K4M281633F-RE Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  262. K4M281633H Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  263. K4M281633H-RF1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  264. K4M281633H-RF1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  265. K4M281633H-RF75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  266. K4M281633H-RG1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  267. K4M281633H-RG1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  268. K4M281633H-RG75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  269. K4M281633H-RL1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  270. K4M281633H-RL1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  271. K4M281633H-RL75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  272. K4M281633H-RN1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  273. K4M281633H-RN1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  274. K4M281633H-RN75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  275. K4M28163LF Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  276. K4M28163LF-C Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  277. K4M28163LF-L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  278. K4M28163LF-N Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  279. K4M28163LF-R(B)E/N/S/C/L/R1H Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  280. K4M28163LF-R(B)E/N/S/C/L/R1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  281. K4M28163LF-R(B)E/N/S/C/L/R75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  282. K4M28163LF-R1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  283. K4M28163LF-R75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  284. K4M28163LF-RE Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  285. K4M28163LF-S Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  286. K4M28163PD Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  287. K4M28163PD-BG Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  288. K4M28163PD-BS Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  289. K4M28163PD-RBG/S Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  290. K4M28163PD-RG Samsung - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  291. K4M28163PF Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  292. K4M28163PF-F75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  293. K4M28163PF-R Samsung - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
  294. K4M28163PF-R(B)G/F1L Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  295. K4M28163PF-R(B)G/F90 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  296. K4M28163PF-RBGF75 Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  297. K4M28163PF-RG Samsung - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  298. K4M28323PH-F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  299. K4M28323PH-FC/F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  300. K4M28323PH-FE/G Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  301. K4M28323PH-FHE/G Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  302. K4M511533E Samsung - Mobile-SDRAM
  303. K4M511533E-C Samsung - Mobile-SDRAM
  304. K4M511533E-F1H Samsung - Mobile-sdram
  305. K4M511533E-F1L Samsung - Mobile-SDRAM
  306. K4M511533E-F75 Samsung - Mobile-SDRAM
  307. K4M511533E-L Samsung - Mobile-SDRAM
  308. K4M511533E-Y Samsung - Mobile-SDRAM
  309. K4M511533E-YC Samsung - Mobile-SDRAM
  310. K4M511533E-YP Samsung - Mobile-SDRAM
  311. K4M511533E-YPC Samsung - Mobile-SDRAM
  312. K4M511633E Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  313. K4M511633E-C Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  314. K4M511633E-F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  315. K4M511633E-F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  316. K4M511633E-F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  317. K4M511633E-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  318. K4M511633E-P Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  319. K4M511633E-Y Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  320. K4M51163LE Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  321. K4M51163LE-F Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  322. K4M51163LE-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  323. K4M51163LE-YC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  324. K4M51163LE-YF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  325. K4M51163LE-YL Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  326. K4M51163LE-YPF1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  327. K4M51163LE-YPF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  328. K4M51163LE-YPL Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  329. K4M51163PC-R Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  330. K4M51163PC-RBC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  331. K4M51163PC-RBE Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  332. K4M51163PC-RBF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  333. K4M51163PC-RBF75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  334. K4M51163PC-RBF90 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  335. K4M51163PC-RBG Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  336. K4M51163PC-RC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  337. K4M51163PC-RE Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  338. K4M51163PC-RF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  339. K4M51163PC-RF75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  340. K4M51163PC-RF90 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  341. K4M51163PC-RG Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  342. K4M513233E Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  343. K4M513233E-F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  344. K4M513233E-F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  345. K4M513233E-F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  346. K4M513233E-L Samsung - 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
  347. K4M513233E-MC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  348. K4M513233E-MEC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  349. K4M51323LC Samsung - Mobile-sdram
  350. K4M51323LE-F1L Samsung - 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
  351. K4M51323LE-L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  352. K4M51323LE-M Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  353. K4M51323LE-MC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  354. K4M561633G Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  355. K4M561633G-RBF1H Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
  356. K4M561633G-RBF1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  357. K4M561633G-RBF75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  358. K4M561633G-RBG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  359. K4M561633G-RBL Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  360. K4M561633G-RBN Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  361. K4M561633G-RF1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  362. K4M561633G-RF1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  363. K4M561633G-RF75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  364. K4M561633G-RG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  365. K4M561633G-RL Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  366. K4M561633G-RN Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  367. K4M56163PE-F90 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  368. K4M56163PE-R Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
  369. K4M56163PE-RG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  370. K4M563233D Samsung - 8mx32 Mobile Sdram 90fbga
  371. K4M563233D-MEE/N/I/P Samsung - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  372. K4M563233D-MEE/N/I/P1L Samsung - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  373. K4M563233D-MEE/N/I/P80 Samsung - K4M563233D 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 140mA/1000uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  374. K4M563233E Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  375. K4M563233E-C Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  376. K4M563233E-E Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  377. K4M563233E-F1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  378. K4M563233E-F1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  379. K4M563233E-F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  380. K4M563233E-F80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  381. K4M563233E-G Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  382. K4M563233E-L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  383. K4M563233E-M Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  384. K4M563233E-N Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  385. K4M56323LD Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  386. K4M56323LD-MEG/S Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  387. K4M56323LD-MEG/S1H Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  388. K4M56323LD-MEG/S1L Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  389. K4M56323LD-MEG/S80 Samsung - K4M56323LD 2M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 8Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 130mA/1100uA ; Speed = 80,1H,1L ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  390. K4M56323LE Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  391. K4M56323LE-EC1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  392. K4M56323LE-EC1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  393. K4M56323LE-EC80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  394. K4M56323LE-EE1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  395. K4M56323LE-EE1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  396. K4M56323LE-EE80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  397. K4M56323LE-EL1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  398. K4M56323LE-EL1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  399. K4M56323LE-EL80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  400. K4M56323LE-EN1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  401. K4M56323LE-EN1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  402. K4M56323LE-EN80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  403. K4M56323LE-ER1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  404. K4M56323LE-ER1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  405. K4M56323LE-ER80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  406. K4M56323LE-ES1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  407. K4M56323LE-ES1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  408. K4M56323LE-ES80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  409. K4M56323LE-MC1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  410. K4M56323LE-MC1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  411. K4M56323LE-MC80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  412. K4M56323LE-ME1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  413. K4M56323LE-ME1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  414. K4M56323LE-ME80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  415. K4M56323LE-ML1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  416. K4M56323LE-ML1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  417. K4M56323LE-ML80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  418. K4M56323LE-MN1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  419. K4M56323LE-MN1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  420. K4M56323LE-MN80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  421. K4M56323LE-MR1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  422. K4M56323LE-MR1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  423. K4M56323LE-MR80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  424. K4M56323LE-MS1H Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  425. K4M56323LE-MS1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  426. K4M56323LE-MS80 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  427. K4M56323PG-F Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  428. K4M56323PG-F Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  429. K4M56323PG-FC/F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  430. K4M56323PG-FE/G75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  431. K4M56323PG-FHE/G75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  432. K4M64163PH Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  433. K4M64163PH-R(B)G/F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  434. K4M64163PH-R(B)G/F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  435. K4M64163PH-R(B)G/F90 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  436. K4M64163PH-RBF1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  437. K4M64163PH-RBF75 Samsung - 1m X 16bit X 4 Banks Mobile Sdram In 54csp
  438. K4M64163PH-RBF90 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  439. K4M64163PH-RF1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  440. K4M64163PH-RF75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  441. K4M64163PH-RF90 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  442. K4M64163PH-RG Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP
  443. K4M64163PK Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  444. K4M64163PK-BE75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  445. K4M64163PK-RE75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  446. K4M64163PK-RG75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  447. K4N25 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  448. K4N25A Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  449. K4N25G Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  450. K4N25H Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  451. K4N26 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  452. K4N26323AE Samsung - 128Mbit GDDR2 SDRAM
  453. K4N26323AE-GC Samsung - K4N26323AE 1M X 32Bit X 4 Banks GDDR2 Synchronous DRAM With Differential Data Strobe and DLL ; Organization = 4Mx32 ; Vdd/Vddq(V) = 2.5/1.8 ; Speed(ns) = 500,450,400 ; Refresh = 4K/32m ; Package = 144FBGA ; Interface = SSTL18 ; Production Status = Mass Production ; Comments = -
  454. K4N26323AE-GC20 Samsung - 128mbit Gddr2 Sdram
  455. K4N26323AE-GC22 Samsung - 128Mbit GDDR2 SDRAM
  456. K4N26323AE-GC25 Samsung - 128Mbit GDDR2 SDRAM
  457. K4N27 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  458. K4N28 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  459. K4N29 Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  460. K4N29A Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  461. K4N30 Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  462. K4N31 Kodenshi - Photocoupler (These Photocouplers Cosist ofA Gallium Arsenide Infrared Emitting)
  463. K4N32 Kodenshi - Photocoupler (These Photocouplers Cosist ofA Gallium Arsenide Infrared Emitting)
  464. K4N33 Kodenshi - Photocoupler (These Photocouplers Cosist ofA Gallium Arsenide Infrared Emitting)
  465. K4N35 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  466. K4N36 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  467. K4N37 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  468. K4N38 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  469. K4N38A Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  470. K4N51163QC-ZC Samsung - 512Mbit gDDR2 SDRAM
  471. K4N51163QC-ZC25 Samsung - 512mbit Gddr2 Sdram
  472. K4N51163QC-ZC2A Samsung - 512Mbit gDDR2 SDRAM
  473. K4N51163QC-ZC33 Samsung - 512Mbit gDDR2 SDRAM
  474. K4N51163QC-ZC36 Samsung - 512Mbit gDDR2 SDRAM
  475. K4N56163QF Samsung - 256mbit Gddr2 Sdram
  476. K4N56163QF-GC Samsung - 256Mbit gDDR2 SDRAM
  477. K4N56163QF-GC25 Samsung - 256Mbit gDDR2 SDRAM
  478. K4N56163QF-GC30 Samsung - 256Mbit gDDR2 SDRAM
  479. K4N56163QF-GC37 Samsung - 256Mbit gDDR2 SDRAM
  480. K4P160411C Samsung - K4P160411C 4M X 4Bit CMOS Quad Cas DRAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page Q/c ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  481. K4P170411C Samsung - K4P170411C 4M X 4Bit CMOS Quad Cas DRAM With Fast Page Mode ; Organization = 4Mx4 ; Mode = Fast Page Q/c ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  482. K4Q160411C Samsung - K4Q160411C 4 X 4Bit CMOS Quad Cas DRAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo Q/c ; Voltage(V) = 5 ; Refresh = 2K/32ms ; Speed(ns) = 50,60 ; Package = 26SOJ,24SOJ,26TSOP2,24TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  483. K4Q170411C Samsung - K4Q170411C 4M X 4Bit CMOS Quad Cas DRAM With Extended Data Out ; Organization = 4Mx4 ; Mode = Edo Q/c ; Voltage(V) = 5 ; Refresh = 4K/64ms ; Speed(ns) = 50,60 ; Package = 24SOJ,26SOJ,24TSOP2,26TSOP2 ; Power = Normal,low ; Production Status = Eol ; Comments = Quad Cas
  484. K4R271669A Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  485. K4R271669AM-CG6 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  486. K4R271669AM-CK7 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  487. K4R271669AM-CK8 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  488. K4R271669AN-CG6 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  489. K4R271669AN-CK7 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  490. K4R271669AN-CK8 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  491. K4R271669A-SbCK8 Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  492. K4R271669A-SCxx Samsung - K4R271669A For Short Channel ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = Consumer Pkg.
  493. K4R271669B Samsung - 256k X 16/18 Bit X 32s Banks Direct Rdramtm
  494. K4R271669B-MCG6 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  495. K4R271669B-MCK7 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  496. K4R271669B-MCK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  497. K4R271669B-N(M)CG6 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  498. K4R271669B-N(M)CK7 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  499. K4R271669B-Nb(M)CcK8 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  500. K4R271669B-NbMCcK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = -
  501. K4R271669B-NCG6 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  502. K4R271669B-NCK7 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  503. K4R271669B-NCK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  504. K4R271669B-NMCG6 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = -
  505. K4R271669B-NMCK7 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = -
  506. K4R271669B-SbCK8 Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  507. K4R271669B-SCxx Samsung - K4R271669B Direct RDRAM™ ; Organization = 256Kx16*32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54uBGA ; Production Status = Eol ; Comments = For Short Channel
  508. K4R271669D Samsung - 128Mbit RDRAM(D-die)
  509. K4R271669D-RcCS8 Samsung - K4R271669D 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Eol ; Comments = Lead/leaded Free Pkg. Short Channel
  510. K4R271669D-T Samsung - 128mbit Rdram(d-die)
  511. K4R271669D-TbCS8 Samsung - K4R271669D 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Eol ; Comments = Lead/leaded Free Pkg. Short Channel
  512. K4R271669D-TCS8 Samsung - 128Mbit RDRAM(D-die)
  513. K4R271669E Samsung - 128mbit Rdram(e-die)
  514. K4R271669E-RcCS8 Samsung - K4R271669E 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Mass Production ; Comments = Leaded/lead Free Pkg.+short Channel
  515. K4R271669E-TbCS8 Samsung - K4R271669E 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Mass Production ; Comments = Leaded/lead Free Pkg.+short Channel
  516. K4R271669F Samsung - 128mbit Rdram(f-die)
  517. K4R271669F-TbCS8 Samsung - K4R271669F 256K X 16 Bit X 32s Banks Direct RDRAM™ ; Organization = (256Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 400/45 ; Package = 54WBGA ; Production Status = Mass Production(Q4,\'03) ; Comments = Lead Free Pkg.+short Channel
  518. K4R441869A Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  519. K4R441869AM-CG6 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  520. K4R441869AM-CK7 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  521. K4R441869AM-CK8 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  522. K4R441869AN-CG6 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  523. K4R441869AN-CK7 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  524. K4R441869AN-CK8 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  525. K4R441869A-NMCG6 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  526. K4R441869A-NMCK7 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  527. K4R441869A-NMCK8 Samsung - K4R441869A Direct RDRAM™ ; Organization = 256Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32m ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 62uBGA ; Production Status = Eol ; Comments = Ecc,mirrored Package
  528. K4R441869B Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  529. K4R441869B-N(M)CG6 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  530. K4R441869B-N(M)CK7 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  531. K4R441869B-N(M)CK8 Samsung - 256K x 16/18 bit x 32s banks Direct RDRAMTM
  532. K4R521669A Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  533. K4R521669A-FbCcT9 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  534. K4R521669A-FCK8 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  535. K4R521669A-FCM8 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  536. K4R521669A-FCM9 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  537. K4R521669A-FCN9 Samsung - K4R521669A, K4R761869A 1M X 16 / 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx16)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Dropped ; Comments = Long/short Channel
  538. K4R571669A Samsung - K4R571669A, K4R881869A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = -
  539. K4R571669A-FbCcM8 Samsung - K4R571669A, K4R881869A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = -
  540. K4R571669A-FCK8 Samsung - K4R571669A, K4R881869A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = -
  541. K4R571669D Samsung - 256/288mbit Rdram(d-die)
  542. K4R571669D-FbCcT9 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  543. K4R571669D-FCK8 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  544. K4R571669D-FCM8 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  545. K4R571669D-FCM9 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  546. K4R571669D-FCN9 Samsung - K4R571669D, K4R881869D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx16)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  547. K4R571669M Samsung - Direct Rdram TM
  548. K4R761869A Samsung - K4R761869A 1M X 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx18)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,400/40 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  549. K4R761869A-F Samsung - K4R761869A 1M X 18bit X 32s Banks Direct RDRAM™ ; Organization = (1Mx18)x32s ; Voltage(V) = 2.5 ; Refresh = 32K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,400/40 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  550. K4R761869A-FbCcN1 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  551. K4R761869A-FCM8 Samsung - 576mbit Rdram (a-die) 1m X 18bit X 32s Banks Direct Rdramtm
  552. K4R761869A-FCT9 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  553. K4R761869A-GCM8 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  554. K4R761869A-GCN1 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  555. K4R761869A-GCT9 Samsung - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
  556. K4R881869 Samsung - 288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
  557. K4R881869A Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  558. K4R881869A-FCK8 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  559. K4R881869A-FCM8 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  560. K4R881869A-FCM9 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  561. K4R881869A-FCN9 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  562. K4R881869A-FCT9 Samsung - K4R881869A, K4R571669A 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Eol ; Comments = Long/short Channel
  563. K4R881869D Samsung - 256/288Mbit RDRAM(D-die)
  564. K4R881869D-FCK8 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  565. K4R881869D-FCM8 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  566. K4R881869D-FCM9 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  567. K4R881869D-FCN9 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  568. K4R881869D-FCT9 Samsung - K4R881869D, K4R571669D 512K X 16/18bit X 32s Banks Direct RDRAM™ ; Organization = (512Kx18)x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 600/32,533/32P,533/32,533/35,400/40,400/45 ; Package = 92WBGA ; Production Status = Mass Production ; Comments = Long/short Channel
  569. K4R881869M Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  570. K4R881869M-NbCcG6 Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  571. K4R881869M-NCG6 Samsung - K4R881869M Direct RDRAM™ ; Organization = 512Kx18x32s ; Voltage(V) = 2.5 ; Refresh = 16K/32ms ; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ; Package = 92uBGA ; Production Status = Eol ; Comments = Ecc
  572. K4R881869M-NCK7 Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  573. K4R881869M-NCK8 Samsung - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
  574. K4-R Mitsumi - LC Filters For Video
  575. K4S160822D Samsung - 2mx8 Sdram 1m X 8bit X 2 Banks Synchronous Dram Lvttl
  576. K4S160822DT-10 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  577. K4S160822DT-7 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  578. K4S160822DT-8 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  579. K4S160822DT-G/F10 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  580. K4S160822DT-G/F7 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  581. K4S160822DT-G/F8 Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  582. K4S160822DT-G/FH Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  583. K4S160822DT-G/FL Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  584. K4S160822DT-H Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  585. K4S160822DT-L Samsung - K4S160822D 1MB X 8Bit X 2 Banks Synchronous DRAM ; Organization = 2Mx8 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 1H,1L,10 ; Package = 44TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  586. K4S161622D Samsung - 512k X 16bit X 2 Banks Synchronous Dram
  587. K4S161622D-TC/L10 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  588. K4S161622D-TC/L55 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  589. K4S161622D-TC/L60 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  590. K4S161622D-TC/L70 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  591. K4S161622D-TC/L80 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  592. K4S161622D-TE Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  593. K4S161622D-TI/E Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  594. K4S161622D-TI/E10 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  595. K4S161622D-TI/E50 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  596. K4S161622D-TI/E55 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  597. K4S161622D-TI/E60 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  598. K4S161622D-TI/E70 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  599. K4S161622D-TI/E80 Samsung - K4S161622D 512KB X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  600. K4S161622E Samsung - 1M x 16 SDRAM
  601. K4S161622E-TC10 Samsung - 1M x 16 SDRAM
  602. K4S161622E-TC55 Samsung - 1M x 16 SDRAM
  603. K4S161622E-TC60 Samsung - 1M x 16 SDRAM
  604. K4S161622E-TC70 Samsung - 1M x 16 SDRAM
  605. K4S161622E-TC80 Samsung - 1M x 16 SDRAM
  606. K4S161622H Samsung - 16mb H-die Sdram Specification
  607. K4S161622H-TC10 Samsung - K4S161622H 512K X 16Bit X 2 Banks Synchronous DRAM ; Organization = 1Mx16 ; Bank/ Interface = 2B/LVTTL ; Refresh = 2K/32ms ; Speed = 55,60,70,80,10 ; Package = 50TSOP2 ; Power = C ; Production Status = Under Development ; Comments = -
  608. K4S161622H-TC55 Samsung - 16Mb H-die SDRAM Specification
  609. K4S161622H-TC60 Samsung - 16Mb H-die SDRAM Specification
  610. K4S161622H-TC70 Samsung - 16Mb H-die SDRAM Specification
  611. K4S161622H-TC80 Samsung - 16Mb H-die SDRAM Specification
  612. K4S1G0632D Samsung - st.32M x 4Bit x 4 Banks SDRAMThe K4S1G0632D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 67,108,864 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  613. K4S1G0632D-UC75 Samsung - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  614. K4S1G0632MT Samsung - K4S1G0632MT 64M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 256Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  615. K4S1G0732B Samsung - SDRAM stacked 1Gb B-die
  616. K4S1G0732B-TC75 Samsung - Sdram Stacked 1gb B-die
  617. K4S1G0732D Samsung - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  618. K4S1G0732D-UC75 Samsung - st.16M x 8Bit x 4 Banks SDRAMThe K4S1G0732D is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  619. K4S280432A Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  620. K4S280432A-TC/L10 Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  621. K4S280432A-TC/L1H Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  622. K4S280432A-TC/L1L Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  623. K4S280432A-TC/L75 Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  624. K4S280432A-TC/L80 Samsung - K4S280432A 8MBx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  625. K4S280432B Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  626. K4S280432B-TC/L10 Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  627. K4S280432B-TC/L1H Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  628. K4S280432B-TC/L1L Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  629. K4S280432B-TC/L75 Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  630. K4S280432B-TC/L80 Samsung - K4S280432B 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC100,PC133
  631. K4S280432C Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  632. K4S280432C-TC/L1H Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
  633. K4S280432C-TC/L1L Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
  634. K4S280432C-TC/L75 Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous DRAM LVTTL
  635. K4S280432D Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  636. K4S280432D-TB1H Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  637. K4S280432D-TB1L Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  638. K4S280432D-TB75 Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  639. K4S280432D-TB7C Samsung - K4S280432D 8Mx4Bitx4 Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2.\'03) ; Comments = ICC6=450uA
  640. K4S280432D-TC/L1H Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  641. K4S280432D-TC/L1L Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  642. K4S280432D-TC/L75 Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  643. K4S280432D-TC/L7C Samsung - K4S280432D 8M X 4Bit X 4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  644. K4S280432E Samsung - 128Mb E-die SDRAM Specification
  645. K4S280432E-TC75 Samsung - 128mb E-die Sdram Specification
  646. K4S280432E-TCL75 Samsung - K4S280432E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  647. K4S280432E-TL75 Samsung - 128Mb E-die SDRAM Specification
  648. K4S280432F Samsung - 128Mb F-die SDRAM Specification
  649. K4S280432F-TC75 Samsung - 128mb F-die Sdram Specification
  650. K4S280432F-TC75 Samsung - 128Mb F-die SDRAM Specification
  651. K4S280432F-TCL75 Samsung - 128Mb F-die SDRAM Specification
  652. K4S280432F-TL75 Samsung - 128mb F-die Sdram Specification
  653. K4S280432F-UC Samsung - 128mb F-die Sdram Specification 54 Tsop-ii With Pb-free (rohs Compliant)
  654. K4S280432F-UC75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  655. K4S280432F-UL75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  656. K4S280432M Samsung - 128mbit Sdram 8m X 4bit X 4 Banks Synchronous Dram Lvttl
  657. K4S280432M-TC/L10 Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  658. K4S280432M-TC/L1H Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  659. K4S280432M-TC/L1L Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  660. K4S280432M-TC/L80 Samsung - K4S280432M 8Mx4Bitx4Banks Synchronous DRAM ; Organization = 32Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  661. K4S280832A Samsung - 128mbit Sdram 4m X 8bit X 4 Banks Synchronous Dram Lvttl
  662. K4S280832A-TC/L10 Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  663. K4S280832A-TC/L1H Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  664. K4S280832A-TC/L1L Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  665. K4S280832A-TC/L75 Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  666. K4S280832A-TC/L80 Samsung - K4S280832A 4MBx8Bitx4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  667. K4S280832B Samsung - 4m X 8bit X 4 Banks Sychronous Dram
  668. K4S280832B-TC10 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  669. K4S280832B-TC1H Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  670. K4S280832B-TC1L Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  671. K4S280832B-TC75 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  672. K4S280832B-TC80 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  673. K4S280832B-TCL10 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  674. K4S280832B-TCL1H Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  675. K4S280832B-TCL1L Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  676. K4S280832B-TCL75 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  677. K4S280832B-TCL80 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  678. K4S280832B-TL10 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  679. K4S280832B-TL1H Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  680. K4S280832B-TL1L Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  681. K4S280832B-TL75 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  682. K4S280832B-TL80 Samsung - 4M x 8Bit x 4 Banks Sychronous DRAM
  683. K4S280832C Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  684. K4S280832C-N Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  685. K4S280832C-NC/L1H Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  686. K4S280832C-NC/L1L Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  687. K4S280832C-NC/L75 Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  688. K4S280832C-TC/L1H Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  689. K4S280832C-TC/L1L Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  690. K4S280832C-TC/L75 Samsung - K4S280832C 4MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  691. K4S280832D Samsung - 128mbit Sdram (4m X 8bit X 4 Banks Synchronous Dram)
  692. K4S280832D-TC/L1H Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  693. K4S280832D-TC/L1L Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  694. K4S280832D-TC/L75 Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  695. K4S280832D-TC/L7C Samsung - K4S280832D 4M X 8Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = Convert to E-die, 7C:EOL
  696. K4S280832E Samsung - K4S280832E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  697. K4S280832E-TC75 Samsung - 128Mb E-die SDRAM Specification
  698. K4S280832E-TCL75 Samsung - K4S280832E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  699. K4S280832E-TL75 Samsung - 128Mb E-die SDRAM Specification
  700. K4S280832F-TC75 Samsung - 128Mb F-die SDRAM Specification
  701. K4S280832F-TC75 Samsung - 128Mb F-die SDRAM Specification
  702. K4S280832F-TCL75 Samsung - 128Mb F-die SDRAM Specification
  703. K4S280832F-TL75 Samsung - 128Mb F-die SDRAM Specification
  704. K4S280832F-UC75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  705. K4S280832F-UL75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  706. K4S280832M Samsung - 128mbit Sdram 4m X 8bit X 4 Banks Synchronous Dram Lvttl
  707. K4S280832M-TC/L10 Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  708. K4S280832M-TC/L1H Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  709. K4S280832M-TC/L1L Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  710. K4S280832M-TC/L80 Samsung - K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 16Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,PC100,PC66
  711. K4S281632B Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  712. K4S281632B-N Samsung - 2m X 16bit X 4 Banks Synchronous Dram In Stsop
  713. K4S281632B-NC/L1H Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  714. K4S281632B-NC/L1L Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  715. K4S281632B-TC10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  716. K4S281632B-TC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  717. K4S281632B-TC1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  718. K4S281632B-TC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  719. K4S281632B-TC80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  720. K4S281632B-TC/L10 Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  721. K4S281632B-TC/L1H Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  722. K4S281632B-TC/L1L Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  723. K4S281632B-TC/L75 Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  724. K4S281632B-TC/L80 Samsung - K4S281632B 2MB X 16Bit X 4Banks Synchronous DRAM Row Buffer Row Decoder Col. Buffer LCBR ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100,PC133
  725. K4S281632B-TL10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  726. K4S281632B-TL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  727. K4S281632B-TL1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  728. K4S281632B-TL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  729. K4S281632B-TL80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  730. K4S281632C Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  731. K4S281632C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  732. K4S281632C-TC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  733. K4S281632C-TC1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  734. K4S281632C-TC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  735. K4S281632C-TC/L1H Samsung - K4S281632C 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  736. K4S281632C-TC/L1L Samsung - K4S281632C 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  737. K4S281632C-TC/L75 Samsung - K4S281632C 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  738. K4S281632C-TI Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  739. K4S281632C-TI1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  740. K4S281632C-TI1L Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  741. K4S281632C-TI75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  742. K4S281632C-TI/P1H Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous DRAM LVTTL
  743. K4S281632C-TI/P1L Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous DRAM LVTTL
  744. K4S281632C-TI/P75 Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous DRAM LVTTL
  745. K4S281632C-TL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  746. K4S281632C-TL1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  747. K4S281632C-TL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  748. K4S281632C-TP Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  749. K4S281632C-TP1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  750. K4S281632C-TP1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  751. K4S281632C-TP75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  752. K4S281632D Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  753. K4S281632D-L1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  754. K4S281632D-L1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  755. K4S281632D-L55 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  756. K4S281632D-L60 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  757. K4S281632D-L75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  758. K4S281632D-L7C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  759. K4S281632D-NC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  760. K4S281632D-NC60 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  761. K4S281632D-NC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  762. K4S281632D-NC7C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  763. K4S281632D-NL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  764. K4S281632D-NL60 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  765. K4S281632D-NL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  766. K4S281632D-NL7C Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  767. K4S281632D-TB1H Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  768. K4S281632D-TB1L Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  769. K4S281632D-TB75 Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  770. K4S281632D-TB7C Samsung - K4S281632D 2Mx16Bitx4 Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production(last Time Buy:Q2,\'03) ; Comments = ICC6=450uA
  771. K4S281632D-TC Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  772. K4S281632D-TC75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  773. K4S281632D-TC/L1H Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  774. K4S281632D-TC/L1L Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  775. K4S281632D-TC/L55 Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  776. K4S281632D-TC/L60 Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  777. K4S281632D-TC/L75 Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  778. K4S281632D-TC/L7C Samsung - K4S281632D 2M X 16Bit X 4Banks Synchronous DRAM ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 55,60,7C,75,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = I,p,c,l ; Production Status = Eol ; Comments = Industrial
  779. K4S281632D-TL75 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  780. K4S281632E Samsung - K4S281632E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  781. K4S281632E-TC60 Samsung - 128Mb E-die SDRAM Specification
  782. K4S281632E-TC75 Samsung - 128Mb E-die SDRAM Specification
  783. K4S281632E-TCL60 Samsung - 128mb E-die Sdram Specification
  784. K4S281632E-TCL60/75 Samsung - K4S281632E 8M X 4Bit X 4 Banks / 4M X 8Bit X 4 Banks / 2M X 16Bit X 4 Banks Sdram ; Organization = 8Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  785. K4S281632E-TCL75 Samsung - 128mb E-die Sdram Specification
  786. K4S281632E-TL60 Samsung - 128Mb E-die SDRAM Specification
  787. K4S281632E-TL75 Samsung - 128Mb E-die SDRAM Specification
  788. K4S281632F-TC60 Samsung - 128Mb F-die SDRAM Specification
  789. K4S281632F-TC60 Samsung - 128Mb F-die SDRAM Specification
  790. K4S281632F-TC75 Samsung - 128Mb F-die SDRAM Specification
  791. K4S281632F-TC75 Samsung - 128Mb F-die SDRAM Specification
  792. K4S281632F-TCL60 Samsung - 128Mb F-die SDRAM Specification
  793. K4S281632F-TCL75 Samsung - 128Mb F-die SDRAM Specification
  794. K4S281632F-TL60 Samsung - 128Mb F-die SDRAM Specification
  795. K4S281632F-TL75 Samsung - 128Mb F-die SDRAM Specification
  796. K4S281632F-UC60 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  797. K4S281632F-UC75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  798. K4S281632F-UL60 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  799. K4S281632F-UL75 Samsung - 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  800. K4S281632M Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  801. K4S281632M-L10 Samsung - 128mbit Sdram 2m X 16bit X 4 Banks Synchronous Dram Lvttl
  802. K4S281632M-L1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  803. K4S281632M-L1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  804. K4S281632M-L80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  805. K4S281632M-TC Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  806. K4S281632M-TC10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  807. K4S281632M-TC1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  808. K4S281632M-TC1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  809. K4S281632M-TC80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  810. K4S281632M-TC/L10 Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  811. K4S281632M-TC/L1H Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  812. K4S281632M-TC/L1L Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  813. K4S281632M-TC/L80 Samsung - K4S281632M 2MB X 16Bit X 4Banks Synchronous DRAM ; Organization = 2Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC66,PC100
  814. K4S281632M-TL Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  815. K4S281632M-TL10 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  816. K4S281632M-TL1H Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  817. K4S281632M-TL1L Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  818. K4S281632M-TL80 Samsung - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  819. K4S281633D Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  820. K4S281633D-N1H Samsung - 8Mx16 SDRAM 54CSP
  821. K4S281633D-N1L Samsung - 8Mx16 SDRAM 54CSP
  822. K4S281633D-N75 Samsung - 8mx16 Sdram 54csp
  823. K4S281633D-RBL/N/P Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  824. K4S281633D-RBL/N/P1H Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  825. K4S281633D-RBL/N/P75 Samsung - K4S281633D 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 80mA/500uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54WBGA ; Production Status = Mass Production ; Comments = -
  826. K4S281633D-RL Samsung - 8Mx16 SDRAM 54CSP
  827. K4S28163LD Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  828. K4S28163LD-RBL/N/P Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  829. K4S28163LD-RBL/N/P15 Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  830. K4S28163LD-RBL/N/P1H Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  831. K4S28163LD-RBL/N/P1L Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  832. K4S28163LD-RBL/N/P75 Samsung - K4S28163LD 2M X 16Bit X 4 Banks Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 55mA/450uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  833. K4S283232E Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  834. K4S283232E-T Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  835. K4S283232E-TC/L1L100MHzCL3 Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  836. K4S283232E-TC/L60166MHzCL3 Samsung - K4S283232E 1M X 32Bit X 4 Banks Sdram in 86TSOP2 ; Organization = 4Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,75,1L ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  837. K4S283233F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  838. K4S283233F-C Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  839. K4S283233F-EE/N/I/P1H Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  840. K4S283233F-EE/N/I/P1L Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  841. K4S283233F-EE/N/I/P75 Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  842. K4S283233F-F1H Samsung - 1m X 32bit X 4 Banks Mobile Sdram In 90fbga
  843. K4S283233F-F1L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  844. K4S283233F-F60 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  845. K4S283233F-F75 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  846. K4S283233F-FE Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  847. K4S283233F-FHE Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  848. K4S283233F-G Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  849. K4S283233F-L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  850. K4S283233F-MEE/N/I/P Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  851. K4S283233F-ME/N/I/P1H Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  852. K4S283233F-ME/N/I/P1L Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  853. K4S283233F-ME/N/I/P75 Samsung - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  854. K4S283233F-N Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  855. K4S283234F Samsung -
  856. K4S28323LF Samsung - 1m X 32bit X 4 Banks Mobile Sdram In 90fbga
  857. K4S28323LF-ER1H Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  858. K4S28323LF-F Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  859. K4S28323LF-F(H)E/N/S/C/L/R1H Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  860. K4S28323LF-F(H)E/N/S/C/L/R1L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  861. K4S28323LF-F(H)E/N/S/C/L/R60 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  862. K4S28323LF-F(H)E/N/S/C/L/R75 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  863. K4S28323LF-FR60 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  864. K4S28323LF-HER75 Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  865. K4S28323LF-NR1L Samsung - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  866. K4S510432B Samsung - K4S510432B 32M X 4Bit X 4 Banks Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP ; Power = C,l ; Production Status = Mass Production ; Comments = Mono
  867. K4S510432B-CL75 Samsung - 512Mb B-die SDRAM Specification
  868. K4S510432B-TC Samsung - 512mb B-die Sdram Specification
  869. K4S510432B-TC75 Samsung - 512Mb B-die SDRAM Specification
  870. K4S510432B-TCL75 Samsung - 512Mb B-die SDRAM Specification
  871. K4S510432B-UC Samsung - 512Mb B-die SDRAM Specification
  872. K4S510432B-UC75 Samsung - 512mb B-die Sdram Specification
  873. K4S510432D Samsung - 2M x 4Bit x 4 Banks SDRAMhe K4S510432D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  874. K4S510432D-UC(L)75 Samsung - 2M x 4Bit x 4 Banks SDRAMhe K4S510432D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  875. K4S510432M Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  876. K4S510432M-TC1H Samsung - 512mbit Sdram 32m X 4bit X 4 Banks Synchronous Dram Lvttl
  877. K4S510432M-TC1L Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  878. K4S510432M-TC75 Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  879. K4S510432M-TC/TL1H Samsung - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  880. K4S510432M-TC/TL1L Samsung - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  881. K4S510432M-TC/TL75 Samsung - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  882. K4S510432M-TL1H Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  883. K4S510432M-TL1L Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  884. K4S510432M-TL75 Samsung - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
  885. K4S510632B Samsung -
  886. K4S510632C Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  887. K4S510632C-TC/L1H Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  888. K4S510632C-TC/L1L Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  889. K4S510632C-TC/L75 Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  890. K4S510632C-TC/L7C Samsung - K4S510632C 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  891. K4S510632D Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  892. K4S510632D-TC/L1H Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  893. K4S510632D-TC/L1L Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  894. K4S510632D-TC/L75 Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  895. K4S510632D-TC/L7C Samsung - K4S510632D 32Mx4Bitx4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  896. K4S510732B Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  897. K4S510732B-TC/L1H Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  898. K4S510732B-TC/L1L Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  899. K4S510732B-TC/L75 Samsung - K4S510732B 16Mx8Bitx4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = Stacked
  900. K4S510732C Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  901. K4S510732C-TC/L1H Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  902. K4S510732C-TC/L1L Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  903. K4S510732C-TC/L75 Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  904. K4S510732C-TC/L7C Samsung - K4S510732C 16M X 8Bi TX 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Stacked
  905. K4S510832B Samsung - K4S510832B 16M X 8Bit X 4 Banks Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP ; Power = C,l ; Production Status = Mass Production ; Comments = Mono
  906. K4S510832B-CL75 Samsung - 512Mb B-die SDRAM Specification
  907. K4S510832B-TC75 Samsung - 512Mb B-die SDRAM Specification
  908. K4S510832B-TCL75 Samsung - 512Mb B-die SDRAM Specification
  909. K4S510832B-UC75 Samsung - 512Mb B-die SDRAM Specification
  910. K4S510832C Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  911. K4S510832C-KC/L1H Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  912. K4S510832C-KC/L1L Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  913. K4S510832C-KC/L75 Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  914. K4S510832C-KC/L7C Samsung - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  915. K4S510832D Samsung - 16M x 8Bit x 4 Banks SDRAMThe K4S510832D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  916. K4S510832D-UC(L)75 Samsung - 16M x 8Bit x 4 Banks SDRAMThe K4S510832D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  917. K4S510832M Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  918. K4S510832M-TC1H Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  919. K4S510832M-TC1L Samsung - 16m X 8bit X 4 Banks Synchronous Dram Lvttl
  920. K4S510832M-TC75 Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  921. K4S510832M-TC/TL1H Samsung - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  922. K4S510832M-TC/TL1L Samsung - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  923. K4S510832M-TC/TL75 Samsung - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
  924. K4S510832M-TL1H Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  925. K4S510832M-TL1L Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  926. K4S510832M-TL75 Samsung - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
  927. K4S511533C Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  928. K4S511533C-YL/N/P Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  929. K4S511533C-YL/N/P1H Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  930. K4S511533C-YL/N/P1L Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  931. K4S511533C-YL/N/P80 Samsung - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  932. K4S511533F Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  933. K4S511533F-F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  934. K4S511533F-F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  935. K4S511533F-F75 Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  936. K4S511533F-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  937. K4S511533F-Y(P)C/L/F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  938. K4S511533F-Y(P)C/L/F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  939. K4S511533F-Y(P)C/L/F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  940. K4S511533F-YC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  941. K4S51153LC Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  942. K4S51153LC-YG/S Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  943. K4S51153LC-YG/S15 Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  944. K4S51153LC-YG/S1H Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  945. K4S51153LC-YXXX Samsung - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  946. K4S51153LF Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  947. K4S51153LF-Y(P)C/L/F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  948. K4S51153LF-Y(P)C/L/F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  949. K4S51153LF-Y(P)C/L/F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  950. K4S51153PF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  951. K4S51153PF-YF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  952. K4S51153PF-YF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  953. K4S51153PF-YF75 Samsung - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
  954. K4S51153PF-YF90 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  955. K4S51153PF-YPF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  956. K4S51153PF-YPF1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  957. K4S511632B Samsung - K4S511632B 8M X 16Bit X 4 Banks Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP ; Power = C,l ; Production Status = Mass Production ; Comments = Mono
  958. K4S511632B-CL75 Samsung - 512Mb B-die SDRAM Specification
  959. K4S511632B-TC75 Samsung - 512Mb B-die SDRAM Specification
  960. K4S511632B-TCL75 Samsung - 512Mb B-die SDRAM Specification
  961. K4S511632B-UC75 Samsung - 512Mb B-die SDRAM Specification
  962. K4S511632C Samsung - DDP 512Mbit SDRAM
  963. K4S511632C-KC Samsung - Ddp 512mbit Sdram
  964. K4S511632C-KC/L1H Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  965. K4S511632C-KC/L1L Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  966. K4S511632C-KC/L75 Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  967. K4S511632C-KC/L7C Samsung - K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  968. K4S511632C-L1H Samsung - DDP 512Mbit SDRAM
  969. K4S511632C-L1L Samsung - DDP 512Mbit SDRAM
  970. K4S511632C-L75 Samsung - DDP 512Mbit SDRAM
  971. K4S511632C-L7C Samsung - DDP 512Mbit SDRAM
  972. K4S511632D Samsung - DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
  973. K4S511632D-KC Samsung - Ddp 512mbit Sdram 8m X 16bit X 4 Banks Synchronous Dram Lvttl
  974. K4S511632D-KC/L1H Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  975. K4S511632D-KC/L1L Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  976. K4S511632D-KC/L75 Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  977. K4S511632D-KC/L7C Samsung - K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
  978. K4S511632M Samsung - 512Mbit SDRAM
  979. K4S511632M-TC Samsung - 512mbit Sdram
  980. K4S511632M-TC/TL1H Samsung - K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Prodution ; Comments = Monolithic
  981. K4S511632M-TC/TL1L Samsung - K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Prodution ; Comments = Monolithic
  982. K4S511632M-TC/TL75 Samsung - K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Prodution ; Comments = Monolithic
  983. K4S511632M-TL1H Samsung - 512Mbit SDRAM
  984. K4S511632M-TL1L Samsung - 512Mbit SDRAM
  985. K4S511632M-TL75 Samsung - 512Mbit SDRAM
  986. K4S511633C Samsung - 32Mx16 Mobile SDRAM 54CSP 1/CS
  987. K4S511633C-N Samsung - 32mx16 Mobile Sdram 54csp 1/cs
  988. K4S511633C-P Samsung - 32Mx16 Mobile SDRAM 54CSP 1/CS
  989. K4S511633C-XXXX Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  990. K4S511633C-YL Samsung - 32Mx16 Mobile SDRAM 54CSP 1/CS
  991. K4S511633C-YL/N1H Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  992. K4S511633C-YL/N1L Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  993. K4S511633C-YL/N80 Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  994. K4S511633C-YL/N/P Samsung - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  995. K4S511633F Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  996. K4S511633F-F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  997. K4S511633F-F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  998. K4S511633F-F75 Samsung - 8m X 16bit X 4 Banks Mobile Sdram
  999. K4S511633F-L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  1000. K4S511633F-YC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  1001. K4S511633F-YPC Samsung - 8M x 16Bit x 4 Banks Mobile SDRAM
  1002. K4S51163LC Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1003. K4S51163LC-XXXX Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1004. K4S51163LC-YG/S Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1005. K4S51163LC-YG/S15 Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1006. K4S51163LC-YG/S1H Samsung - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1007. K4S51163LF Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1008. K4S51163LF-Y(P)C/L/F1H Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1009. K4S51163LF-Y(P)C/L/F1L Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1010. K4S51163LF-Y(P)C/L/F75 Samsung - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1011. K4S51163PF Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1012. K4S51163PF-F1L Samsung - 8m X 16bit X 4 Banks Mobile-sdram
  1013. K4S51163PF-F90 Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAM
  1014. K4S51163PF-Y Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAM
  1015. K4S51163PF-Y(P)F1L Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1016. K4S51163PF-Y(P)F75 Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1017. K4S51163PF-Y(P)F90 Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1018. K4S51163PF-YF Samsung - 8M x 16Bit x 4 Banks Mobile-SDRAM
  1019. K4S513233C Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1020. K4S513233C-ML/N/P Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1021. K4S513233C-ML/N/P1H Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1022. K4S513233C-ML/N/P1L Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1023. K4S513233C-ML/N/P80 Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1024. K4S513233C-MXXX Samsung - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1025. K4S513233F Samsung - Mobile SDRAM
  1026. K4S513233F-F1H Samsung - Mobile SDRAM
  1027. K4S513233F-F1L Samsung - Mobile Sdram
  1028. K4S513233F-F75 Samsung - Mobile SDRAM
  1029. K4S513233F-L Samsung - Mobile SDRAM
  1030. K4S513233F-M(E)C/L/F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1031. K4S513233F-M(E)C/L/F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1032. K4S513233F-M(E)C/L/F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1033. K4S513233F-MC Samsung - Mobile SDRAM
  1034. K4S51323L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1035. K4S51323LC Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1036. K4S51323LC-MG/S Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1037. K4S51323LC-MG/S15 Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1038. K4S51323LC-MG/S1H Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1039. K4S51323LC-MXXX Samsung - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1040. K4S51323LF Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1041. K4S51323LF-F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1042. K4S51323LF-F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1043. K4S51323LF-F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1044. K4S51323LF-L Samsung - 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
  1045. K4S51323LF-M(E)C/L/F1H Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1046. K4S51323LF-M(E)C/L/F1L Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1047. K4S51323LF-M(E)C/L/F75 Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1048. K4S51323LF-MC Samsung - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1049. K4S51323P Samsung - 4m X 32bit X 4 Banks Mobile-sdram
  1050. K4S51323PF Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAMThe K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
  1051. K4S51323PF-MEF1L Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  1052. K4S51323PF-MEF75 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  1053. K4S51323PF-MEF90 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  1054. K4S51323PF-MF1L Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  1055. K4S51323PF-MF75 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  1056. K4S51323PF-MF90 Samsung - 4M x 32Bit x 4 Banks Mobile-SDRAM
  1057. K4S560432A Samsung - 256mbit Sdram 16m X 4bit X 4 Banks Synchronous Dram Lvttl
  1058. K4S560432A-TC/L1H Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1059. K4S560432A-TC/L1L Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1060. K4S560432A-TC/L75 Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1061. K4S560432A-TC/L80 Samsung - K4S560432A 16MBx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1062. K4S560432B Samsung - 256mbit Sdram 16m X 4bit X 4 Banks Synchronous Dram Lvttl
  1063. K4S560432B-TC/L1H Samsung - K4S560432B 16MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1064. K4S560432B-TC/L1L Samsung - K4S560432B 16MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1065. K4S560432B-TC/L75 Samsung - K4S560432B 16MB X 4Bit X 4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1066. K4S560432C Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1067. K4S560432C-TB1H Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1068. K4S560432C-TB1L Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1069. K4S560432C-TB75 Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1070. K4S560432C-TB7C Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1071. K4S560432C-TC/L1H Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1072. K4S560432C-TC/L1L Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1073. K4S560432C-TC/L75 Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1074. K4S560432C-TC/L7C Samsung - K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1075. K4S560432D Samsung - 16m X 4bit X 4 Banks Synchronous Dram Lvttl
  1076. K4S560432D-TC1H Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1077. K4S560432D-TC1L Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1078. K4S560432D-TC75 Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1079. K4S560432D-TC7C Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1080. K4S560432D-TC/L1H Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1081. K4S560432D-TC/L1L Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1082. K4S560432D-TC/L75 Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1083. K4S560432D-TC/L7C Samsung - K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1084. K4S560432D-TL1H Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1085. K4S560432D-TL1L Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1086. K4S560432D-TL75 Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1087. K4S560432D-TL7C Samsung - 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
  1088. K4S560432E Samsung - K4S560432E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1089. K4S560432E-NC Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  1090. K4S560432E-NC75 Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  1091. K4S560432E-NCL75 Samsung - 128mb E-die Sdram Specification
  1092. K4S560432E-NL75 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  1093. K4S560432E-TC Samsung - 256Mb E-die SDRAM Specification
  1094. K4S560432E-TC75 Samsung - 256mb E-die Sdram Specification
  1095. K4S560432E-TCL75 Samsung - K4S560432E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 64Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1096. K4S560432E-TL75 Samsung - 256Mb E-die SDRAM Specification
  1097. K4S560432E-UC Samsung - 256mb E-die Sdram Specification 54 Tsop-ii With Pb-free (rohs Compliant)
  1098. K4S560432E-UC75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1099. K4S560432E-UL75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1100. K4S560832A Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  1101. K4S560832A-TC/L1H Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1102. K4S560832A-TC/L1L Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1103. K4S560832A-TC/L75 Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1104. K4S560832A-TC/L80 Samsung - K4S560832A 8MBx8Bitx4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1105. K4S560832B Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  1106. K4S560832B-TC/L1H Samsung - K4S560832B 8MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1107. K4S560832B-TC/L1L Samsung - K4S560832B 8MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1108. K4S560832B-TC/L75 Samsung - K4S560832B 8MB X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1109. K4S560832C Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  1110. K4S560832C-TB1H Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1111. K4S560832C-TB1L Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1112. K4S560832C-TB75 Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1113. K4S560832C-TB7C Samsung - K4S560832C 8M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1114. K4S560832C-TC/L1H Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1115. K4S560832C-TC/L1L Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1116. K4S560832C-TC/L75 Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1117. K4S560832C-TC/L7C Samsung - K4S560832C 8M X 8Bit X 4Banks Synchronous DRAM ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1118. K4S560832D Samsung - 256mbit Sdram 8m X 8bit X 4 Banks Synchronous Dram Lvttl
  1119. K4S560832D-TC1H Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  1120. K4S560832D-TC1L Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  1121. K4S560832D-TC7A Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  1122. K4S560832D-TC7C Samsung - 32mx64 Sdram Dimm Based On 32mx8, 4banks, 8k Refresh, 3.3v Synchronous Drams With Spd
  1123. K4S560832D-TC/L1H Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1124. K4S560832D-TC/L1L Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1125. K4S560832D-TC/L75 Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1126. K4S560832D-TC/L7C Samsung - K4S560832D 8Mx8bitx4Banks Synchronous DRAM LVTTL ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1127. K4S560832D-TL1H Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  1128. K4S560832D-TL1L Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  1129. K4S560832D-TL7A Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  1130. K4S560832D-TL7C Samsung - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
  1131. K4S560832E Samsung - K4S560832E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1132. K4S560832E-NC75 Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  1133. K4S560832E-NCL75 Samsung - 128mb E-die Sdram Specification
  1134. K4S560832E-NL75 Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  1135. K4S560832E-TC75 Samsung - 256Mb E-die SDRAM Specification
  1136. K4S560832E-TCL75 Samsung - K4S560832E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 32Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1137. K4S560832E-TL75 Samsung - 256Mb E-die SDRAM Specification
  1138. K4S560832E-UC75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1139. K4S560832E-UL75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1140. K4S561632A Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl
  1141. K4S561632A-TC/L1H Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1142. K4S561632A-TC/L1L Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1143. K4S561632A-TC/L75 Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1144. K4S561632A-TC/L80 Samsung - K4S561632A 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1145. K4S561632B Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl
  1146. K4S561632B-TC/L1H Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  1147. K4S561632B-TC/L1L Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  1148. K4S561632B-TC/L75 Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  1149. K4S561632B-TIP Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  1150. K4S561632B-TI/P1H Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  1151. K4S561632B-TI/P1L Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  1152. K4S561632B-TI/P75 Samsung - K4S561632B 4MBx16Bitx4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l,i,p ; Production Status = Eol ; Comments = -
  1153. K4S561632C Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1154. K4S561632C-TB1H Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1155. K4S561632C-TB1L Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1156. K4S561632C-TB75 Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1157. K4S561632C-TB7C Samsung - K4S561632C 4M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,7C,75,1H,1L ; Package = 54TSOP2 ; Power = B,i,p,e,n ; Production Status = Mass Production ; Comments = ICC6=800uA
  1158. K4S561632C-TC/L1H Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1159. K4S561632C-TC/L1L Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1160. K4S561632C-TC/L60 Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1161. K4S561632C-TC/L75 Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1162. K4S561632C-TC/L7C Samsung - K4S561632C 4M X 16Bit X 4Banks Synchronous DRAM ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 60,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1163. K4S561632D Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous Dram Lvttl
  1164. K4S561632D-NC/L1H Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1165. K4S561632D-NC/L1L Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1166. K4S561632D-NC/L60 Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1167. K4S561632D-NC/L75 Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1168. K4S561632D-NC/L7C Samsung - K4S561632D 4M X 16bit X 4Banks Synchronous DRAM LVTTL ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7A,1H,1L ; Package = 54TSOP2,54sTSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = 7C:EOL
  1169. K4S561632D-TC/L1H Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1170. K4S561632D-TC/L1L Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1171. K4S561632D-TC/L60 Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1172. K4S561632D-TC/L75 Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1173. K4S561632D-TC/L7C Samsung - 256mbit Sdram 4m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1174. K4S561632E Samsung - 256Mb E-die SDRAM Specification 54pin sTSOP-II
  1175. K4S561632E Samsung - 256Mb E-die SDRAM Specification
  1176. K4S561632E-NCL60 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  1177. K4S561632E-NCL75 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  1178. K4S561632E-TC60 Samsung - 256Mb E-die SDRAM Specification
  1179. K4S561632E-TC75 Samsung - 256Mb E-die SDRAM Specification
  1180. K4S561632E-TCL60 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  1181. K4S561632E-TCL60/75 Samsung - K4S561632E 256Mb E-die SDRAM(16M X 4Bit X 4 Banks / 8M X 8Bit X 4 Banks / 4M X 16Bit X 4 Banks) ; Organization = 16Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,60 ; Package = 54TSOP2,54sTSOP ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1182. K4S561632E-TCL75 Samsung - 256mb E-die Sdram Specification 54pin Stsop-ii
  1183. K4S561632E-TL60 Samsung - 256Mb E-die SDRAM Specification
  1184. K4S561632E-TL75 Samsung - 256Mb E-die SDRAM Specification
  1185. K4S561632E-UC60 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1186. K4S561632E-UC75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1187. K4S561632E-UL60 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1188. K4S561632E-UL75 Samsung - 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1189. K4S561633C Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1190. K4S561633C-N Samsung - 16Mx16 SDRAM 54CSP
  1191. K4S561633C-P1H Samsung - 16Mx16 SDRAM 54CSP
  1192. K4S561633C-P1L Samsung - 16mx16 Sdram 54csp
  1193. K4S561633C-P75 Samsung - 16Mx16 SDRAM 54CSP
  1194. K4S561633C-RBL Samsung - 16Mx16 SDRAM 54CSP
  1195. K4S561633C-RBL/N/P Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1196. K4S561633C-RBL/N/P1H Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1197. K4S561633C-RBL/N/P1L Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1198. K4S561633C-RBL/N/P75 Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1199. K4S561633C-RL Samsung - 16Mx16 SDRAM 54CSP
  1200. K4S561633C-XXXX Samsung - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1201. K4S561633F Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1202. K4S561633F-C Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54boc
  1203. K4S561633F-E Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1204. K4S561633F-F1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1205. K4S561633F-F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1206. K4S561633F-F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1207. K4S561633F-G Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1208. K4S561633F-L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1209. K4S561633F-N Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1210. K4S561633F-X Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1211. K4S561633F-X(Z)E/N/G/C/L/F1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  1212. K4S561633F-X(Z)E/N/G/C/L/F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  1213. K4S561633F-X(Z)E/N/G/C/L/F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  1214. K4S561633F-XE Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1215. K4S56163LC Samsung - 16mx16 Mobile Sdram 54csp
  1216. K4S56163LC-RBF/R Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1217. K4S56163LC-RBF/R15 Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1218. K4S56163LC-RBF/R1H Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1219. K4S56163LC-RBF/R1L Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1220. K4S56163LC-RBF/R75 Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1221. K4S56163LC-RF Samsung - 16Mx16 Mobile SDRAM 54CSP
  1222. K4S56163LC-XXXX Samsung - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
  1223. K4S56163LF Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1224. K4S56163LF-F1H Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54boc
  1225. K4S56163LF-F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1226. K4S56163LF-F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1227. K4S56163LF-G Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1228. K4S56163LF-L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1229. K4S56163LF-N Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1230. K4S56163LF-X(Z)E/N/G/C/L/F1H Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  1231. K4S56163LF-X(Z)E/N/G/C/L/F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  1232. K4S56163LF-X(Z)E/N/G/C/L/F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
  1233. K4S56163LF-XE Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
  1234. K4S56163PF Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1235. K4S56163PF-F1L Samsung - 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1236. K4S56163PF-F90 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1237. K4S56163PF-R(B)G/F1L Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1238. K4S56163PF-R(B)G/F75 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1239. K4S56163PF-R(B)G/F90 Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1240. K4S56163PF-RG Samsung - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1241. K4S563233F Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1242. K4S563233F-F(H)E/N/G/C/L/F60 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  1243. K4S563233F-F(H)E/N/G/C/L/F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  1244. K4S563233FHN Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  1245. K4S563233FHN75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1246. K4S56323LF Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1247. K4S56323LF-C Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1248. K4S56323LF-F(H)E/N/S/C/L/R60 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  1249. K4S56323LF-F(H)E/N/S/C/L/R75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
  1250. K4S56323LF-FE Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1251. K4S56323LF-L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1252. K4S56323LF-N Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1253. K4S56323LF-R1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1254. K4S56323LF-S Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1255. K4S56323PF Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1256. K4S56323PF-F(H)G/F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAhe K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1257. K4S56323PF-F(H)G/F90 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAhe K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1258. K4S56323PF-F1L Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1259. K4S56323PF-F75 Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1260. K4S56323PF-F90 Samsung - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
  1261. K4S56323PF-FG Samsung - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1262. K4S640432C Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  1263. K4S640432C-TC/L10 Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  1264. K4S640432C-TC/L1H Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  1265. K4S640432C-TC/L1L Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  1266. K4S640432C-TC/L70 Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  1267. K4S640432C-TC/L80 Samsung - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
  1268. K4S640432D Samsung - 64mbit Sdram 4m X 4bit X 4 Banks Synchronous Dram Lvttl
  1269. K4S640432D-TC/L10 Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1270. K4S640432D-TC/L1H Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1271. K4S640432D-TC/L1L Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1272. K4S640432D-TC/L75 Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1273. K4S640432D-TC/L80 Samsung - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1274. K4S640432E Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  1275. K4S640432E-L1H Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  1276. K4S640432E-L1L Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  1277. K4S640432E-L75 Samsung - 4m X 4bit X 4 Banks Synchronous Dram
  1278. K4S640432E-TC Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM
  1279. K4S640432E-TC/L1H Samsung - K4S640432E 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1280. K4S640432E-TC/L1L Samsung - K4S640432E 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1281. K4S640432E-TC/L75 Samsung - K4S640432E 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1282. K4S640432F Samsung - 4m X 4bit X 4 Banks Synchronous Dram Lvttl
  1283. K4S640432F-TC1H Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  1284. K4S640432F-TC1L Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  1285. K4S640432F-TC75 Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  1286. K4S640432F-TC/L75 Samsung - K4S640432F 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1287. K4S640432F-TL1H Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  1288. K4S640432F-TL1L Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  1289. K4S640432F-TL75 Samsung - 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
  1290. K4S640432H Samsung - K4S640432H 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1291. K4S640432H-TC Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1292. K4S640432H-TC75 Samsung - 64mb H-die Sdram Specification 54 Tsop-ii With Pb-free
  1293. K4S640432H-TCL75 Samsung - K4S640432H 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1294. K4S640432H-TL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1295. K4S640432H-UC Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1296. K4S640432H-UC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1297. K4S640432H-UL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1298. K4S640832C Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  1299. K4S640832C-TC/L10 Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1300. K4S640832C-TC/L1H Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1301. K4S640832C-TC/L1L Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1302. K4S640832C-TC/L70 Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1303. K4S640832C-TC/L80 Samsung - K4S640832C 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1304. K4S640832D Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  1305. K4S640832D-TC/L10 Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1306. K4S640832D-TC/L1H Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1307. K4S640832D-TC/L1L Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1308. K4S640832D-TC/L75 Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1309. K4S640832D-TC/L80 Samsung - K4S640832D 2MB X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1310. K4S640832E Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1311. K4S640832E-TC1H Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1312. K4S640832E-TC1L Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1313. K4S640832E-TC75 Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  1314. K4S640832E-TC/L1H Samsung - K4S640832E 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1315. K4S640832E-TC/L1L Samsung - K4S640832E 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1316. K4S640832E-TC/L75 Samsung - K4S640832E 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1317. K4S640832E-TL1H Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1318. K4S640832E-TL1L Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1319. K4S640832E-TL75 Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1320. K4S640832F Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1321. K4S640832F-TC75 Samsung - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
  1322. K4S640832F-TC/L75 Samsung - K4S640832F 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1323. K4S640832F-TL75 Samsung - 64mbit Sdram 2m X 8bit X 4 Banks Synchronous Dram Lvttl
  1324. K4S640832H Samsung - K4S640832H 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1325. K4S640832H-TC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1326. K4S640832H-TCL75 Samsung - K4S640832H 2M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 8Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1327. K4S640832H-TL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1328. K4S640832H-UC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1329. K4S640832H-UL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1330. K4S641632C Samsung - 1m X 16bit X 4 Banks Synchronous Dram
  1331. K4S641632C-TC/L10 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1332. K4S641632C-TC/L1H Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1333. K4S641632C-TC/L1L Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1334. K4S641632C-TC/L60 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1335. K4S641632C-TC/L70 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1336. K4S641632C-TC/L75 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1337. K4S641632C-TC/L80 Samsung - K4S641632C 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 6.0,7.5,7.0,8.0,1H,1L,10 ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1338. K4S641632D Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous Dram Lvttl
  1339. K4S641632D-TC/L1H Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1340. K4S641632D-TC/L1L Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1341. K4S641632D-TC/L55 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1342. K4S641632D-TC/L60 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1343. K4S641632D-TC/L70 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1344. K4S641632D-TC/L75 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1345. K4S641632D-TC/L80 Samsung - K4S641632D 1MB X 16Bit X 4 Bank Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,8.0,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1346. K4S641632E Samsung - 64Mbit SDRAM
  1347. K4S641632E-TC1H Samsung - 64Mbit SDRAM
  1348. K4S641632E-TC1H/TL1H Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1349. K4S641632E-TC1L Samsung - 64Mbit SDRAM
  1350. K4S641632E-TC1L/TL1L Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1351. K4S641632E-TC50 Samsung - 64Mbit SDRAM
  1352. K4S641632E-TC50/TL50 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1353. K4S641632E-TC55 Samsung - 64Mbit SDRAM
  1354. K4S641632E-TC55/TL55 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1355. K4S641632E-TC60 Samsung - 64mbit Sdram
  1356. K4S641632E-TC60/TL60 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1357. K4S641632E-TC70 Samsung - 64Mbit SDRAM
  1358. K4S641632E-TC70/TL70 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1359. K4S641632E-TC75 Samsung - 64Mbit SDRAM
  1360. K4S641632E-TC75/TL75 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
  1361. K4S641632E-TC/L1H Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1362. K4S641632E-TC/L1L Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1363. K4S641632E-TC/L55 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1364. K4S641632E-TC/L60 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1365. K4S641632E-TC/L70 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1366. K4S641632E-TC/L75 Samsung - K4S641632E 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0,7.5,1H,1L ; Refresh = 4K/64ms ; Package = 54TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1367. K4S641632E-TL1H Samsung - 64Mbit SDRAM
  1368. K4S641632E-TL1L Samsung - 64Mbit SDRAM
  1369. K4S641632E-TL50 Samsung - 64Mbit SDRAM
  1370. K4S641632E-TL55 Samsung - 64Mbit SDRAM
  1371. K4S641632E-TL60 Samsung - 64Mbit SDRAM
  1372. K4S641632E-TL70 Samsung - 64Mbit SDRAM
  1373. K4S641632E-TL75 Samsung - 64Mbit SDRAM
  1374. K4S641632F Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1375. K4S641632F-TC1H Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous Dram Lvttl
  1376. K4S641632F-TC1H/TL1H Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1377. K4S641632F-TC1L Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1378. K4S641632F-TC1L/TL1L Samsung - 64mbit Sdram 1m X 16bit X 4 Banks Synchronous DRAM LVTTL
  1379. K4S641632F-TC50 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1380. K4S641632F-TC50/TL50 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1381. K4S641632F-TC55 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1382. K4S641632F-TC55/TL55 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1383. K4S641632F-TC60 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1384. K4S641632F-TC60/TL60 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1385. K4S641632F-TC70 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1386. K4S641632F-TC70/TL70 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1387. K4S641632F-TC75 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1388. K4S641632F-TC75/TL75 Samsung - K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 50,55,60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1389. K4S641632F-TL1H Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1390. K4S641632F-TL1L Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1391. K4S641632F-TL50 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1392. K4S641632F-TL55 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1393. K4S641632F-TL60 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1394. K4S641632F-TL70 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1395. K4S641632F-TL75 Samsung - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  1396. K4S641632H Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1397. K4S641632H-TC60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1398. K4S641632H-TC70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1399. K4S641632H-TC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1400. K4S641632H-TCL60 Samsung - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1401. K4S641632H-TCL70 Samsung - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1402. K4S641632H-TCL75 Samsung - K4S641632H 1M X 16Bit X 4 Banks Synchronous DRAM ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 60,70,75 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Customer Sample ; Comments = -
  1403. K4S641632H-TL60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1404. K4S641632H-TL70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1405. K4S641632H-TL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
  1406. K4S641632H-UC60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1407. K4S641632H-UC70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1408. K4S641632H-UC75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1409. K4S641632H-UL60 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1410. K4S641632H-UL70 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1411. K4S641632H-UL75 Samsung - 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
  1412. K4S641633D Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1413. K4S641633D-G Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1414. K4S641633D-GC/L1H Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1415. K4S641633D-GC/L1L Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1416. K4S641633D-GE/N1H Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1417. K4S641633D-GE/N1L Samsung - K4S641633D 1M X 16Bit X 4 Banks Synchronous DRAM With CSP ; Organization = 4Mx16 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 96,1H,1L ; Package = CSP ; Power = C,l,e,n ; Production Status = Eol ; Comments = -
  1418. K4S641633F Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1419. K4S641633F-GAL/N/P Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1420. K4S641633F-GAL/N/P1H Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1421. K4S641633F-GAL/N/P1L Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1422. K4S641633F-GAL/N/P75 Samsung - K4S641633F 1M X 16Bit X 4 Banks Sdram in 54CSP & 52CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 55mA/400uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1423. K4S641633H Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1424. K4S641633H-C Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1425. K4S641633H-F1H Samsung - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1426. K4S641633H-F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1427. K4S641633H-F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1428. K4S641633H-G Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1429. K4S641633H-L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1430. K4S641633H-N Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1431. K4S641633H-R Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1432. K4S641633H-R(B)E/N/G/C/L/F1H Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1433. K4S641633H-R(B)E/N/G/C/L/F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1434. K4S641633H-R(B)E/N/G/C/L/F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1435. K4S641633H-RBE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1436. K4S641633H-RE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1437. K4S64163LF Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1438. K4S64163LF-GAF/R Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1439. K4S64163LF-GAF/R15 Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1440. K4S64163LF-GAF/R1H Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1441. K4S64163LF-GAF/R1L Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1442. K4S64163LF-GAF/R75 Samsung - K4S64163LF 1M X 16Bit X 4 Banks Sdram in 52/54CSP ; Organization = 4Mx16 ; Vdd/Vddq(V) = 2.5/1.8,2.5/2.5 ; Temperature = L,n,g,s,f,r,p ; Current(Icc1/Icc6) = 50mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP,52CSP ; Production Status = Mass Production ; Comments = -
  1443. K4S64163LH Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1444. K4S64163LH-C Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1445. K4S64163LH-F1H Samsung - 1m X 16bit X 4 Banks Mobile Sdram In 54fbga
  1446. K4S64163LH-F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1447. K4S64163LH-F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1448. K4S64163LH-G Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1449. K4S64163LH-L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1450. K4S64163LH-N Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1451. K4S64163LH-R(B)E/N/G/C/L/F1H Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1452. K4S64163LH-R(B)E/N/G/C/L/F1L Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1453. K4S64163LH-R(B)E/N/G/C/L/F75 Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1454. K4S64163LH-RBE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1455. K4S64163LH-RE Samsung - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
  1456. K4S643232C Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1457. K4S643232C-TC10 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1458. K4S643232C-TC55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1459. K4S643232C-TC60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1460. K4S643232C-TC70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1461. K4S643232C-TC80 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1462. K4S643232C-TC/L10 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1463. K4S643232C-TC/L55 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1464. K4S643232C-TC/L60 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1465. K4S643232C-TC/L70 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1466. K4S643232C-TC/L80 Samsung - K4S643232C 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.3/3.3 ; Speed(ns) = 5.5,6.0,7.0, 8.0,10 ; Refresh = 4K/64ms ; Package = 86TSOP2 ; Interface = LVTTL ; Production Status = Eol ; Comments = -
  1467. K4S643232C-TL10 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1468. K4S643232C-TL55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1469. K4S643232C-TL60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1470. K4S643232C-TL70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1471. K4S643232C-TL80 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1472. K4S643232E Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl(3.3v)
  1473. K4S643232E Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1474. K4S643232E-TC45 Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  1475. K4S643232E-TC50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1476. K4S643232E-TC55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1477. K4S643232E-TC60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1478. K4S643232E-TC70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1479. K4S643232E-TC/L45 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1480. K4S643232E-TC/L50 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1481. K4S643232E-TC/L55 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1482. K4S643232E-TC/L60 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1483. K4S643232E-TC/L70 Samsung - K4S643232E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = -
  1484. K4S643232E-TE50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1485. K4S643232E-TE60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1486. K4S643232E-TE70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1487. K4S643232E-TI Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  1488. K4S643232E-TI60 Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous DRAM LVTTL (3.3v)
  1489. K4S643232E-TI70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1490. K4S643232E-TL45 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1491. K4S643232E-TL50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1492. K4S643232E-TL55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1493. K4S643232E-TL60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1494. K4S643232E-TL70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1495. K4S643232E-TN50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1496. K4S643232E-TN60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1497. K4S643232E-TN70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
  1498. K4S643232E-TP60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1499. K4S643232E-TP70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1500. K4S643232F Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl
  1501. K4S643232F- Samsung - 2m X 32 Sdram 512k X 32bit X 4 Banks Synchronous Dram Lvttl3.3v
  1502. K4S643232F-TC45 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1503. K4S643232F-TC50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1504. K4S643232F-TC55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1505. K4S643232F-TC60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1506. K4S643232F-TC70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1507. K4S643232F-TC/L45 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1508. K4S643232F-TC/L50 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1509. K4S643232F-TC/L55 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1510. K4S643232F-TC/L60 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1511. K4S643232F-TC/L70 Samsung - K4S643232F 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 4.5,5.0,5.5,6.0,7.0 ; Package = 86TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Tc/l-commercial,ti/p-industrial
  1512. K4S643232F-TI60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1513. K4S643232F-TI70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1514. K4S643232F-TL45 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1515. K4S643232F-TL50 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1516. K4S643232F-TL55 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1517. K4S643232F-TL60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1518. K4S643232F-TL70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
  1519. K4S643232F-TP60 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1520. K4S643232F-TP70 Samsung - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
  1521. K4S643232H Samsung - 64mb H-die (x32) Sdram Specification
  1522. K4S643232H-TC50 Samsung - 64Mb H-die (x32) SDRAM Specification
  1523. K4S643232H-TC50 Samsung - 64mb H-die (x32) Sdram Specification
  1524. K4S643232H-TC55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1525. K4S643232H-TC55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1526. K4S643232H-TC60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1527. K4S643232H-TC60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1528. K4S643232H-TC70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1529. K4S643232H-TC70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1530. K4S643232H-TC/L50 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1531. K4S643232H-TC/L55 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1532. K4S643232H-TC/L60 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1533. K4S643232H-TC/L70 Samsung - K4S643232H 512K X 32Bit X 4 Banks, Organization = 512Kx32, Bank/ Inter...
  1534. K4S643232H-TL50 Samsung - 64Mb H-die (x32) SDRAM Specification
  1535. K4S643232H-TL50 Samsung - 64Mb H-die (x32) SDRAM Specification
  1536. K4S643232H-TL55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1537. K4S643232H-TL55 Samsung - 64Mb H-die (x32) SDRAM Specification
  1538. K4S643232H-TL60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1539. K4S643232H-TL60 Samsung - 64Mb H-die (x32) SDRAM Specification
  1540. K4S643232H-TL70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1541. K4S643232H-TL70 Samsung - 64Mb H-die (x32) SDRAM Specification
  1542. K4S643233E Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1543. K4S643233E-SE/N Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1544. K4S643233E-SE/N10 Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1545. K4S643233E-SE/N70 Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1546. K4S643233E-SE/N80 Samsung - K4S643233E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0, 3.3/3.3 ; Temperature = E,n ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1547. K4S643233F Samsung - 2mx32 Mobile Sdram 90fbga Cmos Sdram
  1548. K4S643233F-DE/N/I/P1H Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1549. K4S643233F-DE/N/I/P1L Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1550. K4S643233F-DE/N/I/P75 Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1551. K4S643233F-SDE/N/I/P Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1552. K4S643233FSE/N/I/P1H Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1553. K4S643233F-SE/N/I/P1L Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1554. K4S643233F-SE/N/I/P75 Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1555. K4S643233F-XXXX Samsung - K4S643233F 512K X 32Bit X 4 Banks Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 75mA/400uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1556. K4S643233H Samsung - Mobile-SDRAM
  1557. K4S643233H-C Samsung - Mobile-sdram
  1558. K4S643233H-F Samsung - Mobile-SDRAM
  1559. K4S643233H-F(H)E/N/G/C/L/F1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1560. K4S643233H-F(H)E/N/G/C/L/F1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1561. K4S643233H-F(H)E/N/G/C/L/F60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1562. K4S643233H-F(H)E/N/G/C/L/F75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1563. K4S643233H-F1H Samsung - Mobile-SDRAM
  1564. K4S643233H-F1L Samsung - Mobile-SDRAM
  1565. K4S643233H-FE Samsung - Mobile-SDRAM
  1566. K4S643233H-FHE Samsung - Mobile-SDRAM
  1567. K4S643233H-G Samsung - Mobile-SDRAM
  1568. K4S643233H-L Samsung - Mobile-SDRAM
  1569. K4S643233H-N Samsung - Mobile-SDRAM
  1570. K4S643234E Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1571. K4S643234E-SE/N Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1572. K4S643234E-SE/N10 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1573. K4S643234E-SE/N70 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5 ; Temperature = e ; Current(Icc1/Icc6) = 55mA/350uA ; Speed = 70,80,10 ; Mobile Function = no ; Package = 90FBGA ; Production Status = Eol ; Comments = -
  1574. K4S643234E-TC Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1575. K4S643234E-TC10 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1576. K4S643234E-TC60 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1577. K4S643234E-TC70 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1578. K4S643234E-TC80 Samsung - K4S643234E 512K X 32Bit X 4 Banks Synchronous DRAM ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5 ; Speed(ns) = 6.0,7.0,8.0,10 ; Refresh = 4K/64ms ; Package = 86 TSOP2 ; Interface = LVTTL ; Production Status = Mass Production ; Comments = -
  1579. K4S64323LF Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1580. K4S64323LF-DG15 Samsung - 2mx32 Mobile Sdram 90fbga
  1581. K4S64323LF-DG1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1582. K4S64323LF-DG1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1583. K4S64323LF-DG75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1584. K4S64323LF-DN15 Samsung - 2mx32 Mobile Sdram 90fbga
  1585. K4S64323LF-DN15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1586. K4S64323LF-DN1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1587. K4S64323LF-DN1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1588. K4S64323LF-DN1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1589. K4S64323LF-DN1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1590. K4S64323LF-DN75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1591. K4S64323LF-DN75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1592. K4S64323LF-DP15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1593. K4S64323LF-DP15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1594. K4S64323LF-DP1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1595. K4S64323LF-DP1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1596. K4S64323LF-DP1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1597. K4S64323LF-DP1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1598. K4S64323LF-DP75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1599. K4S64323LF-DP75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1600. K4S64323LF-DS15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1601. K4S64323LF-DS1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1602. K4S64323LF-DS1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1603. K4S64323LF-DS75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1604. K4S64323LF-DU15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1605. K4S64323LF-DU15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1606. K4S64323LF-DU1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1607. K4S64323LF-DU1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1608. K4S64323LF-DU1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1609. K4S64323LF-DU1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1610. K4S64323LF-DU75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1611. K4S64323LF-DU75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1612. K4S64323LF-S Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1613. K4S64323LF-SDG/S Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1614. K4S64323LF-SDG/S15 Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1615. K4S64323LF-SDG/S1H Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1616. K4S64323LF-SDG/S1L Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1617. K4S64323LF-SDG/S75 Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1618. K4S64323LF-SG15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1619. K4S64323LF-SG1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1620. K4S64323LF-SG1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1621. K4S64323LF-SG75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1622. K4S64323LF-SN Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1623. K4S64323LF-SN15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1624. K4S64323LF-SN15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1625. K4S64323LF-SN1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1626. K4S64323LF-SN1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1627. K4S64323LF-SN1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1628. K4S64323LF-SN1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1629. K4S64323LF-SN75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1630. K4S64323LF-SN75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1631. K4S64323LF-SP15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1632. K4S64323LF-SP15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1633. K4S64323LF-SP1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1634. K4S64323LF-SP1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1635. K4S64323LF-SP1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1636. K4S64323LF-SP1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1637. K4S64323LF-SP75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1638. K4S64323LF-SP75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1639. K4S64323LF-SS15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1640. K4S64323LF-SS1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1641. K4S64323LF-SS1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1642. K4S64323LF-SS75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1643. K4S64323LF-SU15 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1644. K4S64323LF-SU15-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1645. K4S64323LF-SU1H Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1646. K4S64323LF-SU1H-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1647. K4S64323LF-SU1L Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1648. K4S64323LF-SU1L-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1649. K4S64323LF-SU75 Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1650. K4S64323LF-SU75-PB Samsung - 2Mx32 Mobile SDRAM 90FBGA
  1651. K4S64323LF-XXXX Samsung - K4S64323LF 512K X 32Bit X 4 Banks Mobile Sdram ; Organization = 2Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = N,u,p,g,s ; Current(Icc1/Icc6) = 60mA/350uA ; Speed = 75,1H,1L,15 ; Mobile Function = no or Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
  1652. K4S64323LH Samsung - 512k X 32bit X 4 Banks Mobile Sdram In 90fbga
  1653. K4S64323LH-F(H)E/N/G/C/L/F1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1654. K4S64323LH-F(H)E/N/G/C/L/F1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1655. K4S64323LH-F(H)E/N/G/C/L/F60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1656. K4S64323LH-F(H)E/N/G/C/L/F75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
  1657. K4S64323LH-FC1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1658. K4S64323LH-FC1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1659. K4S64323LH-FC60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1660. K4S64323LH-FC75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1661. K4S64323LH-FE1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1662. K4S64323LH-FE1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1663. K4S64323LH-FE60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1664. K4S64323LH-FE75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1665. K4S64323LH-FF1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1666. K4S64323LH-FF1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1667. K4S64323LH-FF60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1668. K4S64323LH-FF75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1669. K4S64323LH-FG1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1670. K4S64323LH-FG1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1671. K4S64323LH-FG60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1672. K4S64323LH-FG75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1673. K4S64323LH-FL1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1674. K4S64323LH-FL1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1675. K4S64323LH-FL60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1676. K4S64323LH-FL75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1677. K4S64323LH-FN1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1678. K4S64323LH-FN1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1679. K4S64323LH-FN60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1680. K4S64323LH-FN75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1681. K4S64323LH-HC1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1682. K4S64323LH-HC1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1683. K4S64323LH-HC60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1684. K4S64323LH-HC75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1685. K4S64323LH-HE1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1686. K4S64323LH-HE1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1687. K4S64323LH-HE60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1688. K4S64323LH-HE75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1689. K4S64323LH-HF1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1690. K4S64323LH-HF1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1691. K4S64323LH-HF60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1692. K4S64323LH-HF75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1693. K4S64323LH-HG1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1694. K4S64323LH-HG1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1695. K4S64323LH-HG60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1696. K4S64323LH-HG75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1697. K4S64323LH-HL1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1698. K4S64323LH-HL1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1699. K4S64323LH-HL60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1700. K4S64323LH-HL75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1701. K4S64323LH-HN1H Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1702. K4S64323LH-HN1L Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1703. K4S64323LH-HN60 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1704. K4S64323LH-HN75 Samsung - 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
  1705. K4T1G044QA Samsung - 1gb A-die Ddr2 Sdram Specification
  1706. K4T1G044QA-ZCCC0 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1707. K4T1G044QA-ZCD5 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1708. K4T1G044QA-ZCD50 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1709. K4T1G044QA-ZCE6 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1710. K4T1G044QM Samsung - 1gb M-die Ddr2 Sdram Specification
  1711. K4T1G044QM-ZCCC Samsung - 1Gb M-die DDR2 SDRAM Specification
  1712. K4T1G044QM-ZCD5 Samsung - 1Gb M-die DDR2 SDRAM Specification
  1713. K4T1G084QA Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1714. K4T1G084QA-ZCCC0 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1715. K4T1G084QA-ZCD5 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1716. K4T1G084QA-ZCD50 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1717. K4T1G084QA-ZCDS0 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1718. K4T1G084QA-ZCE6 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1719. K4T1G084QA-ZCE60 Samsung - 1Gb A-die DDR2 SDRAMThe 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the contr
  1720. K4T1G084QM-ZCCC Samsung - 1Gb M-die DDR2 SDRAM Specification
  1721. K4T1G084QM-ZCD5 Samsung - 1Gb M-die DDR2 SDRAM Specification
  1722. K4T1G164QA Samsung - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  1723. K4T1G164QA-ZCCC0 Samsung - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  1724. K4T1G164QA-ZCD5 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1725. K4T1G164QA-ZCD50 Samsung - The 1Gb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address input
  1726. K4T1G164QA-ZCE6 Samsung - 1Gb A-die DDR2 SDRAM Specification
  1727. K4T1G164QM-ZCCC Samsung - 1Gb M-die DDR2 SDRAM Specification
  1728. K4T1G164QM-ZCD5 Samsung - 1Gb M-die DDR2 SDRAM Specification
  1729. K4T51043Q Samsung - 512mb B-die Ddr2 Sdram
  1730. K4T51043QB Samsung - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
  1731. K4T51043QB Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1732. K4T51043QB-GCCC Samsung - 512Mb B-die DDR2 SDRAM
  1733. K4T51043QB-GCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1734. K4T51043QB-GCE6 Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1735. K4T51043QB-GLCC Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1736. K4T51043QB-GLD5 Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1737. K4T51043QB-GLE6 Samsung - K4T51043QB 512Mb B-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1738. K4T51043QB-ZCCC Samsung - 512Mb B-die DDR2 SDRAM
  1739. K4T51043QB-ZCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1740. K4T51043QC Samsung - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1741. K4T51043QC-ZC(L)E7 Samsung - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1742. K4T51043QC-ZCCC Samsung - 512Mb C-die DDR2 SDRAM
  1743. K4T51043QC-ZCD5 Samsung - 512Mb C-die DDR2 SDRAM
  1744. K4T51043QC-ZCD6 Samsung - 512Mb C-die DDR2 SDRAM
  1745. K4T51043QC-ZCE6 Samsung - 512Mb C-die DDR2 SDRAM
  1746. K4T51043QC-ZCE7 Samsung - 512Mb C-die DDR2 SDRAM
  1747. K4T51043QC-ZCLCC Samsung - 512mb C-die Ddr2 Sdram
  1748. K4T51043QC-ZCLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1749. K4T51043QC-ZCLD6 Samsung - 512Mb C-die DDR2 SDRAM
  1750. K4T51043QC-ZCLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1751. K4T51043QC-ZLCC Samsung - 512Mb C-die DDR2 SDRAM
  1752. K4T51043QC-ZLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1753. K4T51043QC-ZLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1754. K4T51043QC-ZLE7 Samsung - 512Mb C-die DDR2 SDRAM
  1755. K4T51043QM Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1756. K4T51043QM-GCD4 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1757. K4T51043QM-GCD5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1758. K4T51043QM-GCE5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1759. K4T51043QM-GLD4 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1760. K4T51043QM-GLD5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1761. K4T51043QM-GLE5 Samsung - K4T51043QM 512Mb M-die DDR2 Sdram ; Organization = 128Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1762. K4T51083QB Samsung - 512Mb B-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications.
  1763. K4T51083QB Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1764. K4T51083QB-GCCC Samsung - 512Mb B-die DDR2 SDRAM
  1765. K4T51083QB-GCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1766. K4T51083QB-GCE6 Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1767. K4T51083QB-GLCC Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1768. K4T51083QB-GLD5 Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1769. K4T51083QB-GLE6 Samsung - K4T51083QB 512Mb B-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1770. K4T51083QB-ZCCC Samsung - 512Mb B-die DDR2 SDRAM
  1771. K4T51083QB-ZCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1772. K4T51083QC Samsung - 512Mb C-die DDR2 SDRAM
  1773. K4T51083QC-ZC(L)E7 Samsung - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 16Mbit x 8 I/Os x 4banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1774. K4T51083QC-ZCCC Samsung - 512Mb C-die DDR2 SDRAM
  1775. K4T51083QC-ZCD5 Samsung - 512Mb C-die DDR2 SDRAM
  1776. K4T51083QC-ZCD6 Samsung - 512Mb C-die DDR2 SDRAM
  1777. K4T51083QC-ZCE6 Samsung - 512Mb C-die DDR2 SDRAM
  1778. K4T51083QC-ZCE7 Samsung - 512Mb C-die DDR2 SDRAM
  1779. K4T51083QC-ZCLCC Samsung - 512Mb C-die DDR2 SDRAM
  1780. K4T51083QC-ZCLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1781. K4T51083QC-ZCLD6 Samsung - 512Mb C-die DDR2 SDRAM
  1782. K4T51083QC-ZCLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1783. K4T51083QC-ZLCC Samsung - 512Mb C-die DDR2 SDRAM
  1784. K4T51083QC-ZLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1785. K4T51083QC-ZLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1786. K4T51083QC-ZLE7 Samsung - 512Mb C-die DDR2 SDRAM
  1787. K4T51083QM Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1788. K4T51083QM-GCD4 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1789. K4T51083QM-GCD5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1790. K4T51083QM-GCE5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1791. K4T51083QM-GLD4 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1792. K4T51083QM-GLD5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1793. K4T51083QM-GLE5 Samsung - K4T51083QM 512Mb M-die DDR2 Sdram ; Organization = 64Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1794. K4T51163QB Samsung - 512Mb B-die DDR2 SDRAM
  1795. K4T51163QB-GCCC Samsung - 512Mb B-die DDR2 SDRAM
  1796. K4T51163QB-GCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1797. K4T51163QB-GCE6 Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1798. K4T51163QB-GLCC Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1799. K4T51163QB-GLD5 Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1800. K4T51163QB-GLE6 Samsung - K4T51163QB 512Mb B-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1801. K4T51163QB-ZCCC Samsung - 512Mb B-die DDR2 SDRAM
  1802. K4T51163QB-ZCD5 Samsung - 512Mb B-die DDR2 SDRAM
  1803. K4T51163QC Samsung - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1804. K4T51163QC-ZC(L)E7 Samsung - 512Mb C-die DDR2 SDRAMThe 512Mb DDR2 SDRAM is organized asA 8Mbit x 16 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
  1805. K4T51163QC-ZCCC Samsung - 512Mb C-die DDR2 SDRAM
  1806. K4T51163QC-ZCD5 Samsung - 512Mb C-die DDR2 SDRAM
  1807. K4T51163QC-ZCD6 Samsung - 512Mb C-die DDR2 SDRAM
  1808. K4T51163QC-ZCE6 Samsung - 512Mb C-die DDR2 SDRAM
  1809. K4T51163QC-ZCE7 Samsung - 512Mb C-die DDR2 SDRAM
  1810. K4T51163QC-ZCLCC Samsung - 512Mb C-die DDR2 SDRAM
  1811. K4T51163QC-ZCLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1812. K4T51163QC-ZCLD6 Samsung - 512Mb C-die DDR2 SDRAM
  1813. K4T51163QC-ZCLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1814. K4T51163QC-ZLCC Samsung - 512Mb C-die DDR2 SDRAM
  1815. K4T51163QC-ZLD5 Samsung - 512Mb C-die DDR2 SDRAM
  1816. K4T51163QC-ZLE6 Samsung - 512Mb C-die DDR2 SDRAM
  1817. K4T51163QC-ZLE7 Samsung - 512Mb C-die DDR2 SDRAM
  1818. K4T51163QM Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1819. K4T51163QM-GCD4 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1820. K4T51163QM-GCD5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1821. K4T51163QM-GCE5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1822. K4T51163QM-GLD4 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1823. K4T51163QM-GLD5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1824. K4T51163QM-GLE5 Samsung - K4T51163QM 512Mb M-die DDR2 Sdram ; Organization = 32Mx16 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = D5,E5,D4 ; Package = 84FBGA ; Power = C,l ; Production Status = Engineering Sample ; Comments = -
  1825. K4T56043QF Samsung - 256Mb F-die DDR2 SDRAM
  1826. K4T56043QF-GCCC Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1827. K4T56043QF-GCD5 Samsung - 256Mb F-die DDR2 SDRAM
  1828. K4T56043QF-GCE6 Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1829. K4T56043QF-GLCC Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1830. K4T56043QF-GLD5 Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1831. K4T56043QF-GLE6 Samsung - K4T56043QF 256Mb F-die DDR2 Sdram ; Organization = 64Mx4 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1832. K4T56043QF-ZCCC Samsung - 256Mb F-die DDR2 SDRAMThe 256Mb DDR2 SDRAM chip is organized as either 16Mbit x 4 I/Os x 4 banks or 8Mbit x 8 I/Os x 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and addres
  1833. K4T56043QF-ZCD5 Samsung - 256Mb F-die DDR2 SDRAM
  1834. K4T56083QF Samsung - 256Mb F-die DDR2 SDRAM
  1835. K4T56083QF-GCCC Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1836. K4T56083QF-GCD5 Samsung - 256Mb F-die DDR2 SDRAM
  1837. K4T56083QF-GCE6 Samsung - 256Mb F-die DDR2 SDRAM
  1838. K4T56083QF-GLCC Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1839. K4T56083QF-GLD5 Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1840. K4T56083QF-GLE6 Samsung - K4T56083QF 256Mb F-die DDR2 Sdram ; Organization = 32Mx8 ; Bank/ Interface = 4B/SSTL-18(VDD/VDDQ=1.8V) ; Refresh = 8K/64ms ; Speed = E6,D5,CC ; Package = 60FBGA ; Power = C,l ; Production Status = Engineering Sample(Nov.\'03) ; Comments = -
  1841. K4T56083QF-ZCD5 Samsung - 256mb F-die Ddr2 Sdram
  1842. K4T56083QF-ZCE6 Samsung - 256Mb F-die DDR2 SDRAM
  1843. K4X51163PC Samsung - 32m X16 Mobile-ddr Sdram
  1844. K4X51163PC-FEC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1845. K4X51163PC-FECA Samsung - 32M x16 Mobile-DDR SDRAM
  1846. K4X51163PC-FGC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1847. K4X51163PC-FGCA Samsung - 32M x16 Mobile-DDR SDRAM
  1848. K4X51163PC-LEC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1849. K4X51163PC-LECA Samsung - 32M x16 Mobile-DDR SDRAM
  1850. K4X51163PC-LGC3 Samsung - 32M x16 Mobile-DDR SDRAM
  1851. K4X51163PC-LGCA Samsung - 32M x16 Mobile-DDR SDRAM
  1852. K4X56163PE Samsung - 16m X16 Mobile Ddr Sdram
  1853. K4X56163PE-LFG Samsung - 16M x16 Mobile DDR SDRAM
  1854. K4X56163PE-LG Samsung - 16M x16 Mobile DDR SDRAM
  1855. K4X56323PG Samsung - 8M x32 Mobile-DDR SDRAM
  1856. K4X56323PG-7EC3 Samsung - 8M x32 Mobile-DDR SDRAM
  1857. K4X56323PG-7GC3 Samsung - 8M x32 Mobile-DDR SDRAM
  1858. K4X56323PG-8EC3 Samsung - 8M x32 Mobile-DDR SDRAM
  1859. K4Y50024UC Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1860. K4Y50024UC-JCA2 Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1861. K4Y50024UC-JCB3 Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1862. K4Y50024UC-JCC4 Samsung - XDR/RDRAMGeneral DescriptionThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1863. K4Y50044UC Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1864. K4Y50044UC-JCA2 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1865. K4Y50044UC-JCB3 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1866. K4Y50044UC-JCC4 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1867. K4Y50084UC Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1868. K4Y50084UC-JCA2 Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1869. K4Y50084UC-JCB3 Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1870. K4Y50084UC-JCC4 Samsung - XDR/RDRAM The Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1871. K4Y50164UC Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1872. K4Y50164UC-JCA2 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1873. K4Y50164UC-JCB3 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1874. K4Y50164UC-JCC4 Samsung - XDR/RDRAMThe Rambus XDR DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1875. K4Y54044UF Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1876. K4Y54044UF-JCA2 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1877. K4Y54044UF-JCB3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1878. K4Y54044UF-JCC3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1879. K4Y54044UF-JCC4 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1880. K4Y54084UF Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1881. K4Y54084UF-JCA2 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1882. K4Y54084UF-JCB3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1883. K4Y54084UF-JCC3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1884. K4Y54084UF-JCC4 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1885. K4Y54164UF Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1886. K4Y54164UF-JCA2 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1887. K4Y54164UF-JCB3 Samsung - XDR/RDRAMThe Rambus XDR™ DRAM device isA general-purpose high-performance memory device suitable for use inA broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
  1888. K5 Неопределенные - KS Series KEY SWITCHES
  1889. K500 MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.000 to 70.000 MHZ, Output Logic =...
  1890. K500F MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.500 to 100.000 MHZ, Output Logic...
  1891. K504100B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1892. K504100B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1893. K504100C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1894. K504100C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1895. K504100D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1896. K504100D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1897. K504100H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1898. K504100H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1899. K504100M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1900. K504100M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1901. K504100N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1902. K504100N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1903. K504100Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1904. K504100Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1905. K504100V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1906. K504100V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1907. K504100W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1908. K504100W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1909. K504100X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1910. K504100X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1911. K504100Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1912. K504100Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1913. K504100Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1914. K504100Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1915. K504120B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1916. K504120B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1917. K504120C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1918. K504120C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1919. K504120D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1920. K504120D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1921. K504120H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1922. K504120H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1923. K504120M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1924. K504120M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1925. K504120N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1926. K504120N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1927. K504120Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1928. K504120Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1929. K504120V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1930. K504120V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1931. K504120W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1932. K504120W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1933. K504120X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1934. K504120X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1935. K504120Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1936. K504120Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1937. K504120Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1938. K504120Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1939. K504160B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1940. K504160B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1941. K504160C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1942. K504160C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1943. K504160D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1944. K504160D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1945. K504160H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1946. K504160H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1947. K504160M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1948. K504160M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1949. K504160N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1950. K504160N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1951. K504160Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1952. K504160Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1953. K504160V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1954. K504160V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1955. K504160W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1956. K504160W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1957. K504160X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1958. K504160X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1959. K504160Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1960. K504160Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1961. K504160Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1962. K504160Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1963. K50420B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1964. K50420B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1965. K50420C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1966. K50420C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1967. K50420D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1968. K50420D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1969. K50420H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1970. K50420H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1971. K50420M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1972. K50420M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1973. K50420N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1974. K50420N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1975. K50420Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1976. K50420Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1977. K50420V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1978. K50420V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1979. K50420W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1980. K50420W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1981. K50420X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1982. K50420X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1983. K50420Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1984. K50420Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1985. K50420Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1986. K50420Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1987. K50440B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1988. K50440B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1989. K50440C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1990. K50440C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1991. K50440D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1992. K50440D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1993. K50440H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1994. K50440H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1995. K50440M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1996. K50440M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1997. K50440N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1998. K50440N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  1999. K50440Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2000. K50440Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2001. K50440V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2002. K50440V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2003. K50440W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2004. K50440W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2005. K50440X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2006. K50440X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2007. K50440Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2008. K50440Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2009. K50440Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2010. K50440Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2011. K50460B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2012. K50460B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2013. K50460C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2014. K50460C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2015. K50460D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2016. K50460D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2017. K50460H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2018. K50460H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2019. K50460M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2020. K50460M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2021. K50460N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2022. K50460N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2023. K50460Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2024. K50460Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2025. K50460V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2026. K50460V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2027. K50460W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2028. K50460W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2029. K50460X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2030. K50460X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2031. K50460Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2032. K50460Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2033. K50460Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2034. K50460Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2035. K50480B1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2036. K50480B1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2037. K50480C1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2038. K50480C1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2039. K50480D1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2040. K50480D1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2041. K50480H1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2042. K50480H1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2043. K50480M1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2044. K50480M1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2045. K50480N1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2046. K50480N1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2047. K50480Q1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2048. K50480Q1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2049. K50480V1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2050. K50480V1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2051. K50480W1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2052. K50480W1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2053. K50480X1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2054. K50480X1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2055. K50480Y1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2056. K50480Y1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2057. K50480Z1EB1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2058. K50480Z1EN1S Microsemi - Silicon Power Rectifier Assemblies Plate Heatsink
  2059. K50F Voltage Multipliers - VRWM = 5.0KV, Io(A) = 2.2, Trr(nS) = 200, Package = Axial-leaded,epoxy, Terminat...
  2060. K50S Неопределенные - 2,500V - 10,000V Rectifiers
  2061. K50S Voltage Multipliers - VRWM = 5.0KV, Io(A) = 2.2, Trr(nS) = 3000, Package = Axial-leaded,epoxy, Termina...
  2062. K50UF Voltage Multipliers - VRWM = 5.0KV, Io(A) = 2.2, Trr(nS) = 100, Package = Axial-leaded,epoxy, Terminat...
  2063. K510 Knox - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE
  2064. K511 Knox - Low Level Zener Diodes Sharp Knee, Low Impedance
  2065. K561 Knox - LOW LEVEL ZENER DIODES SHARP KNEE, LOW IMPEDANCE
  2066. K5610 Kodenshi - Photocoupler(These Photocouplers consist ofA Gallium Arsenide Infrared Emitting)
  2067. K5611 Kodenshi - Photocoupler(these Photocouplers Consist OfA Gallium Arsenide Infrared Emitting)
  2068. K5620 Kodenshi - Photocoupler(these Photocouplers Cosist OfA Gallium Arsenide Infrared Emitting)
  2069. K5621 Kodenshi - Photocoupler(These Photocouplers cosist ofA Gallium Arsenide Infrared Emitting)
  2070. K5630 Kodenshi - Photocoupler(these Photocouplers Consist Of Two Gallium Arsenide Infrared Emitting)
  2071. K5631 Kodenshi - Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting)
  2072. K5640 Kodenshi - Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)
  2073. K5641 Kodenshi - Photocoupler(these Photocouplers Cosist Of Two Gallium Arsenide Infrared Emitting)
  2074. K570A MtronPTI - Package Description = 8 Pin Dip, Frequency = 1.000 to 52.000 MHZ, Output Logic = CMO...
  2075. K57/3A MtronPTI - Package Description = 8 Pin MTL Dil, Frequency = 1.000 to 52.000 MHZ, Output Logic =...
  2076. K590 Неопределенные - AK Series VERTICAL
  2077. K590 Неопределенные - MOS-Intergrated Microcircuits
  2078. K590KH1 Неопределенные - MOS-Intergrated Microcircuits
  2079. K590KH2 Неопределенные - MOS-Intergrated Microcircuits
  2080. K596 Jiangsu - Si N-CHANNEL JUNCTION FET
  2081. K596-TO-92S Jiangsu - Si N-channel Junction Fet
  2082. K5A3240YBA Samsung - K5A3240YBA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2083. K5A3240YBB Samsung - K5A3240YBB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2084. K5A3240YBC-T755 Samsung - Multi-chip Package Memory 32m Bit (4mx8/2mx16) Dual Bank Nor Flash Memory / 4m(512kx8/256kx16) Full Cmos Sram
  2085. K5A3240YBC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2086. K5A3240YT Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2087. K5A3240YTA Samsung - K5A3240YTA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2088. K5A3240YTB Samsung - K5A3240YTB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2089. K5A3240YTC-T755 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2090. K5A3240YTC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2091. K5A3280YBA Samsung - K5A3280YBA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2092. K5A3280YBB Samsung - K5A3280YBB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Bottom ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2093. K5A3280YBC-T755 Samsung - MCP MEMORY
  2094. K5A3280YBC-T855 Samsung - MCP MEMORY
  2095. K5A3280YTA Samsung - K5A3280YTA 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 80,85,90 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Eol ; Comments = -
  2096. K5A3280YTB Samsung - K5A3280YTB 32M Bit (4Mx8/2Mx16) Dual Bank Nor Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM ; Combination = 32M NOR+8M Lpsram ; Nor Speed(ns) = 70 ; Boot Block = Top ; Bank = 8M,24M ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2097. K5A3280YTC-T755 Samsung - MCP MEMORY
  2098. K5A3280YTC-T855 Samsung - Mcp Memory
  2099. K5A3340YBC-T755 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2100. K5A3340YBC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2101. K5A3340YT Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2102. K5A3340YTC-T755 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2103. K5A3340YTC-T855 Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2104. K5A3380YBC-T755 Samsung - MCP MEMORY
  2105. K5A3380YBC-T855 Samsung - MCP MEMORY
  2106. K5A3380YTC-T755 Samsung - MCP MEMORY
  2107. K5A3380YTC-T855 Samsung - MCP MEMORY
  2108. K5A3X40YTC Samsung - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
  2109. K5A3X80YTC Samsung - MCP MEMORY
  2110. K5B1620YBA Samsung - K5B1620YBA 16M Bit (1Mx16) Boot Block Nor Flash Memory / 2M(128Kx16) Full CMOS SRAM ; Combination = 16M NOR+2M Lpsram ; Nor Speed(ns) = 90 ; Boot Block = Bottom ; Bank = Uniform ; Package = 66TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2111. K5B1620YTA Samsung - K5B1620YTA 16M Bit (1Mx16) Boot Block Nor Flash Memory / 2M(128Kx16) Full CMOS SRAM ; Combination = 16M NOR+2M Lpsram ; Nor Speed(ns) = 90 ; Boot Block = Top ; Bank = Uniform ; Package = 66TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2112. K5B3241YBA Samsung - K5B3241YBA 32M Bit (2Mx16) Boot Block Nor Flash Memory / 4M(256Kx16) Full CMOS SRAM ; Combination = 32M NOR+4M Lpsram ; Nor Speed(ns) = 90 ; Boot Block = Bottom ; Bank = Uniform ; Package = 66TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2113. K5-BW1 Mini-Circuits - KIT FXD ATTEN / SMA / RoHS
  2114. K5-BW2 Mini-Circuits - KIT FXD ATTEN / SMA
  2115. K5-BW2+ Mini-Circuits - KIT ML AMPL / SURF MT / RoHS
  2116. K5D5657ACM Samsung - 256mb Nand and 256mb Mobile Sdram
  2117. K5D5657ACM-F015 Samsung - 256Mb NAND and 256Mb Mobile SDRAM
  2118. K5D5657DCM-F015 Samsung - Mcp Specification Of 256mb Nand and 256mb Mobile Sdram
  2119. K5D5657DCM-F0CL Samsung - MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
  2120. K5L5628JBM Samsung - 256m Bit (16m X16) Synchronous Burst, Multi Bank Nor Flash / 128m Bit(8m X16) Synchronous Burst Utram
  2121. K5L5628JBM-DH18 Samsung - 256M Bit (16M x16) Synchronous Burst, Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
  2122. K5L5628JTM Samsung - 256M Bit (16M x16) Synchronous Burst, Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
  2123. K5L5628JTM-DH18 Samsung - 256M Bit (16M x16) Synchronous Burst, Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
  2124. K5-LFCN+ Mini-Circuits - KIT FILTER / SURF MT/T&R/ RoHS
  2125. K5-M Mitsumi - LC Filters For Video
  2126. K5N07FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  2127. K5N-BW3 Mini-Circuits - KIT FXD ATTEN / N
  2128. K5N-BW3+ Mini-Circuits - TERM / N / RoHS
  2129. K5P2880YCM Samsung - Multi-chip Package Memory 128m Bit 16mx8 Nand Flash Memory / 8m Bit 1mx8/512kx16 Full Cmos Sram
  2130. K5P2880YCM-T085 Samsung - K5P2880YCM 128M Bit (16Mx8) NAND Flash Memory /8M Bit (1Mx8/512Kx16) Full CMOS SRAM ; Combination = 128M NAND+8M Lpsram ; NAND Speed(Random/Serial) = 10us/50ns ; Package = 69TBGA ; PKG Size(mm) = 8x13x1.2 ; Production Status = Mass Production ; Comments = -
  2131. K5Q6432YCM Samsung - K5Q6432YCM 64M Bit (8Mx8) NAND Flash Memory / 32M Bit (2Mx16) Utram ; Combination = 64M NAND+32M Utram ; NAND Speed(Random/Serial) = 10us/50ns ; Package = 69TBGA ; PKG Size(mm) = 8x13x1.2 ; Production Status = Mass Production ; Comments = -
  2132. K5Q6432YCM-T010 Samsung - K5Q6432YCM 64M Bit (8Mx8) NAND Flash Memory / 32M Bit (2Mx16) Utram ; Combination = 64M NAND+32M Utram ; NAND Speed(Random/Serial) = 10us/50ns ; Package = 69TBGA ; PKG Size(mm) = 8x13x1.2 ; Production Status = Mass Production ; Comments = -
  2133. K5S3216Y0A Samsung - K5S3216Y0A 32M Bit (2Mx16 Bit) Uni-transistor RAM / 16M(1Mx16 Bit) Full CMOS SRAM ; Combination = 32M UtRAM+16M LP SRAM ; Speed = 85(UtRAM),70(LP SRAM) ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2134. K5S3216Y0A-T370 Samsung - K5S3216Y0A 32M Bit (2Mx16 Bit) Uni-transistor RAM / 16M(1Mx16 Bit) Full CMOS SRAM ; Combination = 32M UtRAM+16M LP SRAM ; Speed = 85(UtRAM),70(LP SRAM) ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2135. K5S3216Y0A-T385 Samsung - K5S3216Y0A 32M Bit (2Mx16 Bit) Uni-transistor RAM / 16M(1Mx16 Bit) Full CMOS SRAM ; Combination = 32M UtRAM+16M LP SRAM ; Speed = 85(UtRAM),70(LP SRAM) ; Package = 69TBGA ; PKG Size(mm) = 8x11x1.2 ; Production Status = Mass Production ; Comments = -
  2136. K5S3216Y0M Samsung -
  2137. K5T6432YBM Samsung - K5T6432YBM 64M Bit (4Mx16) Four Bank Nor Flash Memory / 32M Bit (2Mx16) Utram ; Combination = 64M NOR+32M Utram ; Nor Speed(ns) = 85 ; Boot Block = Bottom ; Bank = Multi ; Package = 81TBGA ; PKG Size(mm) = 10.8x10.4x1.2 ; Production Status = Mass Production ; Comments = -
  2138. K5T6432YT Samsung - Multi-chip Package Memory 64m Bit 4mx16 Four Bank Nor Flash Memory / 32m Bit 2mx16 Utram
  2139. K6 Неопределенные - KS Series KEY SWITCHES
  2140. K621 Knox - LOW LEVEL ZENER DIODES SHARP KNEE, LOW IMPEDANCE
  2141. K64004C1D Samsung - 1mx4 Bit High Speed Static Ram(5.0v Operating). Operated At Commercial and Industrial Temperature Ranges.
  2142. K681 Knox - LOW LEVEL ZENER DIODES SHARP KNEE, LOW IMPEDANCE
  2143. K6E0804C1C Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2144. K6E0804C1C-12 Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2145. K6E0804C1C-15 Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2146. K6E0804C1C-20 Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2147. K6E0804C1C-C Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2148. K6E0804C1C-J Samsung - K6E0804C1C 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2149. K6E0804C1E Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2150. K6E0804C1E-10 Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2151. K6E0804C1E-12 Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2152. K6E0804C1E-15 Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2153. K6E0804C1E-C Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2154. K6E0804C1E-J Samsung - K6E0804C1E 64K X 4 Bit High-speed CMOS Static RAM ; Organization = 64Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2155. K6E0808C1C Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2156. K6E0808C1C-12 Samsung - 32kx8 Bit High Speed Cmos Static Ram
  2157. K6E0808C1C-15 Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2158. K6E0808C1C-20 Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2159. K6E0808C1C-C Samsung - 32Kx8 Bit High Speed CMOS Static RAM
  2160. K6E0808C1C-J Samsung - K6E0808C1C 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 165 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2161. K6E0808C1C-T Samsung - K6E0808C1C 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 165 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2162. K6E0808C1E Samsung - 32k X 8 Bit High-speed Cmos Static Ram
  2163. K6E0808C1E-10 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2164. K6E0808C1E-12 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2165. K6E0808C1E-15 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2166. K6E0808C1E-C Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2167. K6E0808C1E-C1 Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2168. K6E0808C1E-C10 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2169. K6E0808C1E-C12 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2170. K6E0808C1E-C15 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2171. K6E0808C1E-C-L Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2172. K6E0808C1E-E-L Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2173. K6E0808C1E-E-P Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2174. K6E0808C1E-I Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2175. K6E0808C1E-I10 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2176. K6E0808C1E-I12 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2177. K6E0808C1E-I15 Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2178. K6E0808C1E-I-P Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2179. K6E0808C1E-J Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2180. K6E0808C1E-L Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2181. K6E0808C1E-P Samsung - 32K x 8 Bit High-Speed CMOS Static RAM
  2182. K6E0808C1E-T Samsung - K6E0808C1E 32K X 8 Bit High-speed CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C ; Operating Current(mA) = 80 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2183. K6E0808V1C Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2184. K6E0808V1C-15 Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2185. K6E0808V1C-17 Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2186. K6E0808V1C-C Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2187. K6E0808V1C-J Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2188. K6E0808V1C-T Samsung - K6E0808V1C 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 15,17 ; Operating Temperature = C ; Operating Current(mA) = 90 ; Standby Current(mA) = 0.1 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2189. K6E0808V1E Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2190. K6E0808V1E-12 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2191. K6E0808V1E-15 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2192. K6E0808V1E-20 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2193. K6E0808V1E-C12 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2194. K6E0808V1E-C15 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2195. K6E0808V1E-C20 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2196. K6E0808V1E-C-L Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2197. K6E0808V1E-E-L Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2198. K6E0808V1E-E-P Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2199. K6E0808V1E-I12 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2200. K6E0808V1E-I15 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2201. K6E0808V1E-I20 Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2202. K6E0808V1E-I-P Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2203. K6E0808V1E-J Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2204. K6E0808V1E-T Samsung - K6E0808V1E 32K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 32Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 70 ; Standby Current(mA) = 2 ; Package = 28SOJ,28TSOP1 ; Production Status = Eol ; Comments = -
  2205. K6E1004C1B Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2206. K6E1004C1B-15 Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2207. K6E1004C1B-20 Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2208. K6E1004C1B-B-L Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2209. K6E1004C1B-C-L Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2210. K6E1004C1B-J Samsung - K6E1004C1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 120,118 ; Standby Current(mA) = 5 ; Package = 28SOJ ; Production Status = Eol ; Comments = -
  2211. K6E1008C1B Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2212. K6E1008C1B-15 Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2213. K6E1008C1B-20 Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2214. K6E1008C1B-C Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2215. K6E1008C1B-J Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2216. K6E1008C1B-S Samsung - K6E1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,20 ; Operating Temperature = C ; Operating Current(mA) = 125 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2217. K6F1008R2A Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2218. K6F1008R2A-FI10 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2219. K6F1008R2A-FI70 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2220. K6F1008R2A-I Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2221. K6F1008R2A-YI10 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2222. K6F1008R2A-YI70 Samsung - K6F1008R2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 2 ; Package = 32SOP,32TSOP,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2223. K6F1008R2M Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2224. K6F1008R2M-C Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2225. K6F1008R2M-GC30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2226. K6F1008R2M-GI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2227. K6F1008R2M-I Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2228. K6F1008R2M-TC30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2229. K6F1008R2M-TI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2230. K6F1008R2M-YC30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2231. K6F1008R2M-YI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2232. K6F1008R2M-ZI30 Samsung - K6F1008R2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2233. K6F1008S2A Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2234. K6F1008S2A-FI10 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2235. K6F1008S2A-FI70 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2236. K6F1008S2A-I Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2237. K6F1008S2A-YI10 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2238. K6F1008S2A-YI70 Samsung - K6F1008S2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 3 ; Package = 32SOP,32T SOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2239. K6F1008S2M Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2240. K6F1008S2M-C Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2241. K6F1008S2M-GC12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2242. K6F1008S2M-GC15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2243. K6F1008S2M-GI12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2244. K6F1008S2M-GI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2245. K6F1008S2M-I Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2246. K6F1008S2M-TC12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2247. K6F1008S2M-TC15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2248. K6F1008S2M-TI12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2249. K6F1008S2M-TI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2250. K6F1008S2M-YC12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2251. K6F1008S2M-YC15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2252. K6F1008S2M-YI12 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2253. K6F1008S2M-YI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2254. K6F1008S2M-ZI15 Samsung - K6F1008S2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,35 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2255. K6F1008U2A Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2256. K6F1008U2A-FI10 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2257. K6F1008U2A-FI70 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2258. K6F1008U2A-I Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2259. K6F1008U2A-YI10 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2260. K6F1008U2A-YI70 Samsung - K6F1008U2A 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2261. K6F1008U2C Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2262. K6F1008U2C-F Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2263. K6F1008U2C-YF55 Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2264. K6F1008U2C-YF70 Samsung - K6F1008U2C 128K X 8 Bit Super Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2265. K6F1008V2C Samsung - 128kx8 Bit Super Low Power and Low Voltage Cmos Static Ram
  2266. K6F1008V2C-F Samsung - 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
  2267. K6F1008V2C-YF55 Samsung - 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
  2268. K6F1008V2C-YF70 Samsung - 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
  2269. K6F1008V2M Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2270. K6F1008V2M-C Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2271. K6F1008V2M-GC70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2272. K6F1008V2M-GC85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2273. K6F1008V2M-GI70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2274. K6F1008V2M-GI85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2275. K6F1008V2M-I Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2276. K6F1008V2M-TC70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2277. K6F1008V2M-TC85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2278. K6F1008V2M-TI70 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2279. K6F1008V2M-TI85 Samsung - K6F1008V2M 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 5 ; Package = 32SOP,32TSOP1,32sTSOP1,48CSP ; Production Status = Eol ; Comments = -
  2280. K6F1016R3M Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2281. K6F1016R3M-C Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2282. K6F1016R3M-I Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2283. K6F1016R3M-TB30 Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2284. K6F1016R3M-TF30 Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2285. K6F1016R3M-ZF30 Samsung - K6F1016R3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2286. K6F1016R4A Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2287. K6F1016R4A-FI10 Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2288. K6F1016R4A-FI70 Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2289. K6F1016R4A-I Samsung - K6F1016R4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2290. K6F1016R4M Samsung - K6F1016R4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2291. K6F1016R4M-C Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2292. K6F1016R4M-I Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2293. K6F1016R4M-TB30 Samsung - K6F1016R4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2294. K6F1016R4M-TF30 Samsung - K6F1016R4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2295. K6F1016S3M Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2296. K6F1016S3M-C Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2297. K6F1016S3M-I Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2298. K6F1016S3M-TB12 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2299. K6F1016S3M-TB15 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2300. K6F1016S3M-TF12 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2301. K6F1016S3M-TF15 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2302. K6F1016S3M-ZF15 Samsung - K6F1016S3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2303. K6F1016S4A Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2304. K6F1016S4A-FI10 Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2305. K6F1016S4A-FI70 Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2306. K6F1016S4A-I Samsung - K6F1016S4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 2 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2307. K6F1016S4B Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2308. K6F1016S4B-F Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2309. K6F1016S4B-FF70 Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2310. K6F1016S4B-FF85 Samsung - K6F1016S4B 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2311. K6F1016S4M Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2312. K6F1016S4M-C Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2313. K6F1016S4M-I Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2314. K6F1016S4M-TB12 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2315. K6F1016S4M-TB15 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2316. K6F1016S4M-TF12 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2317. K6F1016S4M-TF15 Samsung - K6F1016S4M 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80,50 ; Standby Current(uA) = 5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2318. K6F1016U4A Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2319. K6F1016U4A-FI10 Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2320. K6F1016U4A-FI70 Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2321. K6F1016U4A-I Samsung - K6F1016U4A 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2322. K6F1016U4B Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2323. K6F1016U4B-F Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2324. K6F1016U4B-FF55 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2325. K6F1016U4B-FF70 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2326. K6F1016U4C Samsung - K6F1016U4C 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2327. K6F1016U4C-AF55 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2328. K6F1016U4C-AF70 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2329. K6F1016U4C-EF55 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2330. K6F1016U4C-EF70 Samsung - 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2331. K6F1016U4C-F Samsung - K6F1016U4C 64K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2332. K6F1016V3M Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2333. K6F1016V3M-C Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2334. K6F1016V3M-I Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2335. K6F1016V3M-TB70 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2336. K6F1016V3M-TB85 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2337. K6F1016V3M-TF70 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2338. K6F1016V3M-TF85 Samsung - K6F1016V3M 64Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 5 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2339. K6F1016V4B Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2340. K6F1016V4B-F Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2341. K6F1016V4B-FF55 Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2342. K6F1016V4B-FF70 Samsung - K6F1016V4B 64K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2343. K6F1616R6A Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2344. K6F1616R6A-EF70 Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2345. K6F1616R6A-EF85 Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2346. K6F1616R6A-F Samsung - K6F1616R6A 1M X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2347. K6F1616R6C Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2348. K6F1616R6C-F Samsung - 1m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2349. K6F1616R6C-FF70 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2350. K6F1616R6M Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2351. K6F1616R6M-EF70 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2352. K6F1616R6M-EF85 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2353. K6F1616R6M-F Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Eol ; Comments = -
  2354. K6F1616T6B Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2355. K6F1616T6B-EF55 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2356. K6F1616T6B-EF70 Samsung - 1m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2357. K6F1616T6B-F Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2358. K6F1616T6B-TF55 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2359. K6F1616T6B-TF70 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2360. K6F1616T6C Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2361. K6F1616T6C-F Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2362. K6F1616T6C-FF55 Samsung - 1m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2363. K6F1616T6C-FF70 Samsung - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2364. K6F1616U6A Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2365. K6F1616U6A-EF55 Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2366. K6F1616U6A-EF70 Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2367. K6F1616U6A-F Samsung - K6F1616U6A 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 3 ; Package = 1 ; Production Status = Mass Production ; Comments = -
  2368. K6F1616U6C Samsung - 16mb(1m X 16 Bit) Low Power Sram
  2369. K6F1616U6C-F Samsung - 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F1616U6C families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial operating temperature ranges.The families also support low data retention voltage for battery back-up operation with low data retention current.
  2370. K6F1616U6M Samsung - 1m X 16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2371. K6F1616U6M-EF55 Samsung - K6F1616U6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 4 ; Package = 2 ; Production Status = Eol ; Comments = -
  2372. K6F1616U6M-EF70 Samsung - K6F1616U6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 48TBGA ; Standby Current(uA) = 4 ; Package = 2 ; Production Status = Eol ; Comments = -
  2373. K6F1616U6M-F Samsung - 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2374. K6F2008R2M Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2375. K6F2008R2M-C Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2376. K6F2008R2M-I Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2377. K6F2008R2M-TC30 Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2378. K6F2008R2M-TI30 Samsung - K6F2008R2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2379. K6F2008S2E Samsung - 256kx8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2380. K6F2008S2E-F Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2381. K6F2008S2E-YF70 Samsung - K6F2008S2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2382. K6F2008S2E-YF85 Samsung - K6F2008S2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2383. K6F2008S2M Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2384. K6F2008S2M-C Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2385. K6F2008S2M-I Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2386. K6F2008S2M-TC12 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2387. K6F2008S2M-TC15 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2388. K6F2008S2M-TI12 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2389. K6F2008S2M-TI15 Samsung - K6F2008S2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 70,85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 30,55 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2390. K6F2008T2E Samsung - 256kx8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2391. K6F2008T2E-F Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2392. K6F2008T2E-YF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2393. K6F2008T2E-YF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2394. K6F2008U2E Samsung - K6F2008U2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2395. K6F2008U2E-EF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2396. K6F2008U2E-EF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2397. K6F2008U2E-F Samsung - K6F2008U2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2398. K6F2008U2E-YF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2399. K6F2008U2E-YF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2400. K6F2008V2E Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2401. K6F2008V2E-F Samsung - K6F2008V2E 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Mass Production ; Comments = -
  2402. K6F2008V2E-LF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2403. K6F2008V2E-LF70 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2404. K6F2008V2E-YF55 Samsung - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2405. K6F2008V2E-YF70 Samsung - 256kx8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2406. K6F2008V2M Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2407. K6F2008V2M-C Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2408. K6F2008V2M-I Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2409. K6F2008V2M-TC70 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2410. K6F2008V2M-TC85 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2411. K6F2008V2M-TI70 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2412. K6F2008V2M-TI85 Samsung - K6F2008V2M 256K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 60 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2413. K6F2016R3M Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2414. K6F2016R3M-C Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2415. K6F2016R3M-I Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2416. K6F2016R3M-TC30 Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2417. K6F2016R3M-TI30 Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2418. K6F2016R3M-ZI30 Samsung - K6F2016R3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.8~2.7 ; Speed-tAA(ns) = 300 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 20 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2419. K6F2016R4A Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2420. K6F2016R4A-I Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2421. K6F2016R4A-ZI10 Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2422. K6F2016R4A-ZI70 Samsung - K6F2016R4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 25 ; Standby Current(uA) = 3 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2423. K6F2016R4D Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2424. K6F2016R4D-F Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2425. K6F2016R4DFamily Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2426. K6F2016R4D-FF70 Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2427. K6F2016R4D-FF85 Samsung - K6F2016R4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2428. K6F2016R4E Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2429. K6F2016R4E-EF70 Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2430. K6F2016R4E-EF85 Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2431. K6F2016R4E-F Samsung - K6F2016R4E 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 1.65x2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2432. K6F2016R4G Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2433. K6F2016R4G-F Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2434. K6F2016R4G-FF70 Samsung - 2mb(128k X 16 Bit) Low Power Sram
  2435. K6F2016R4G-FF85 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2436. K6F2016R4G-XF70 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2437. K6F2016R4G-XF85 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2438. K6F2016S3M Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2439. K6F2016S3M-C Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2440. K6F2016S3M-I Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2441. K6F2016S3M-TC12 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2442. K6F2016S3M-TC15 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2443. K6F2016S3M-TI12 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2444. K6F2016S3M-TI15 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2445. K6F2016S3M-ZI15 Samsung - K6F2016S3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7,2.7~3.3 ; Speed-tAA(ns) = 85,120,150 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 50,80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2446. K6F2016S4A Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2447. K6F2016S4A-I Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2448. K6F2016S4A-ZI10 Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2449. K6F2016S4A-ZI70 Samsung - K6F2016S4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 30 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2450. K6F2016S4D Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2451. K6F2016S4D-F Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2452. K6F2016S4DFamily Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2453. K6F2016S4D-FF70 Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2454. K6F2016S4D-FF85 Samsung - K6F2016S4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2455. K6F2016S4E Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2456. K6F2016S4E-EF70 Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2457. K6F2016S4E-EF85 Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2458. K6F2016S4E-F Samsung - K6F2016S4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48 Fbga ; Production Status = Mass Production ; Comments = -
  2459. K6F2016U3A Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2460. K6F2016U3A-I Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2461. K6F2016U3A-TI10 Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2462. K6F2016U3A-TI70 Samsung - K6F2016U3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2463. K6F2016U4A Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2464. K6F2016U4A-I Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2465. K6F2016U4A-ZI10 Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2466. K6F2016U4A-ZI70 Samsung - K6F2016U4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2467. K6F2016U4D Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2468. K6F2016U4D-F Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2469. K6F2016U4DFamily Samsung - K6F2016U4D 128K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2470. K6F2016U4D-FF55 Samsung - 128k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2471. K6F2016U4D-FF70 Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2472. K6F2016U4E Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2473. K6F2016U4E-EF55 Samsung - K6F2016U4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2474. K6F2016U4E-EF70 Samsung - K6F2016U4E 128K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2475. K6F2016U4E-F Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2476. K6F2016U4G Samsung - 2mb(128k X 16 Bit) Low Power Sram
  2477. K6F2016U4G-F Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2478. K6F2016U4G-FF55 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2479. K6F2016U4G-FF70 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2480. K6F2016U4G-XF55 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2481. K6F2016U4G-XF70 Samsung - 2Mb(128K x 16 bit) Low Power SRAM
  2482. K6F2016V3A Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2483. K6F2016V3A-I Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2484. K6F2016V3A-TI10 Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2485. K6F2016V3A-TI70 Samsung - K6F2016V3A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2486. K6F2016V3M Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2487. K6F2016V3M-C Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2488. K6F2016V3M-I Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2489. K6F2016V3M-TC70 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2490. K6F2016V3M-TC85 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2491. K6F2016V3M-TI70 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2492. K6F2016V3M-TI85 Samsung - K6F2016V3M 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = 0~70,-40~85 ; Operating Current(mA) = 80 ; Standby Current(uA) = 10 ; Package = 44TSOP2,48uBGA ; Production Status = Eol ; Comments = -
  2493. K6F2016V4A Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2494. K6F2016V4A-F Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2495. K6F2016V4A-ZF10 Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2496. K6F2016V4A-ZF70 Samsung - K6F2016V4A 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = -40~85 ; Operating Current(mA) = 40 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2497. K6F2016V4D Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2498. K6F2016V4D-F Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2499. K6F2016V4D-FF55 Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2500. K6F2016V4D-FF70 Samsung - K6F2016V4D 128K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2501. K6F2016V4E Samsung - 128k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2502. K6F2016V4E-EF55 Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2503. K6F2016V4E-EF70 Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2504. K6F2016V4E-F Samsung - 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2505. K6F3216T6M Samsung - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2506. K6F3216T6M-F Samsung - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2507. K6F3216U6M Samsung - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2508. K6F3216U6M-F Samsung - 2m X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2509. K6F4008R2C Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2510. K6F4008R2C-F Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2511. K6F4008R2C-FF70 Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2512. K6F4008R2C-FF85 Samsung - K6F4008R2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70, 85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48-FBGA ; Production Status = Eol ; Comments = -
  2513. K6F4008R2D Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2514. K6F4008R2D-F Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2515. K6F4008R2D-FF70 Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2516. K6F4008R2D-FF85 Samsung - K6F4008R2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2517. K6F4008R2F Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2518. K6F4008R2F-EF70 Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2519. K6F4008R2F-EF85 Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2520. K6F4008R2F-F Samsung - K6F4008R2F 512K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2521. K6F4008S2C Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2522. K6F4008S2C-F Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2523. K6F4008S2C-FF70 Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2524. K6F4008S2C-FF85 Samsung - K6F4008S2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2525. K6F4008S2D Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2526. K6F4008S2D-F Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2527. K6F4008S2D-FF70 Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2528. K6F4008S2D-FF85 Samsung - K6F4008S2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2529. K6F4008U1C Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2530. K6F4008U1C-F Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2531. K6F4008U1C-YF55 Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2532. K6F4008U1C-YF70 Samsung - K6F4008U1C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2533. K6F4008U1D Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2534. K6F4008U1D-F Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2535. K6F4008U1D-YF55 Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2536. K6F4008U1D-YF70 Samsung - K6F4008U1D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2537. K6F4008U2C Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2538. K6F4008U2C-F Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2539. K6F4008U2C-FF55 Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2540. K6F4008U2C-FF70 Samsung - K6F4008U2C 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2541. K6F4008U2D Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2542. K6F4008U2D-F Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2543. K6F4008U2D-FF55 Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2544. K6F4008U2D-FF70 Samsung - K6F4008U2D 512K X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2545. K6F4008U2E Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2546. K6F4008U2E-EF55 Samsung - 512k X 8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2547. K6F4008U2E-EF70 Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2548. K6F4008U2E-F Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2549. K6F4008U2F Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2550. K6F4008U2F-EF55 Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2551. K6F4008U2F-EF70 Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2552. K6F4008U2F-F Samsung - K6F4008U2F 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 45,55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 36TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2553. K6F4008U2G Samsung - 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2554. K6F4008U2G-EF55 Samsung - K6F4008U2G 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Product ; Comments = Product
  2555. K6F4008U2G-EF70 Samsung - K6F4008U2G 512K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Product ; Comments = Product
  2556. K6F4008U2G-F Samsung - 512k X 8 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2557. K6F4016R4D Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2558. K6F4016R4D-F Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2559. K6F4016R4D-FF70 Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2560. K6F4016R4D-FF85 Samsung - K6F4016R4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2561. K6F4016R4E Samsung - 256k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2562. K6F4016R4E-EF70 Samsung - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2563. K6F4016R4E-EF85 Samsung - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2564. K6F4016R4E-F Samsung - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2565. K6F4016R4G Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016R4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention curren
  2566. K6F4016R4G-EF70 Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016R4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention curren
  2567. K6F4016R4G-EF85 Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016R4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention curren
  2568. K6F4016R4M Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2569. K6F4016R4M-I Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2570. K6F4016R4M-ZI10 Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2571. K6F4016R4M-ZI85 Samsung - K6F4016R4M 256K X 16 Bit Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2572. K6F4016R6C Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2573. K6F4016R6C-F Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2574. K6F4016R6C-ZF70 Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2575. K6F4016R6C-ZF85 Samsung - K6F4016R6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2576. K6F4016R6D Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2577. K6F4016R6D-F Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2578. K6F4016R6D-FF70 Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2579. K6F4016R6D-FF85 Samsung - K6F4016R6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2580. K6F4016R6E Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2581. K6F4016R6E-EF70 Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2582. K6F4016R6E-EF85 Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2583. K6F4016R6E-F Samsung - K6F4016R6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2584. K6F4016R6F Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2585. K6F4016R6F-EF70 Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2586. K6F4016R6F-EF85 Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2587. K6F4016R6F-F Samsung - K6F4016R6F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~2.20 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2588. K6F4016R6G Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2589. K6F4016R6G-EF70 Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2590. K6F4016R6G-EF85 Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2591. K6F4016R6G-F Samsung - K6F4016R6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 8 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2592. K6F4016R6M Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2593. K6F4016R6M-I Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2594. K6F4016R6M-ZI10 Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2595. K6F4016R6M-ZI85 Samsung - K6F4016R6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 1.7~2.2 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 5 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2596. K6F4016S4D Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2597. K6F4016S4D-F Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2598. K6F4016S4D-FF70 Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2599. K6F4016S4D-FF85 Samsung - K6F4016S4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2600. K6F4016S4M Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2601. K6F4016S4M-I Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2602. K6F4016S4M-ZI10 Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2603. K6F4016S4M-ZI70 Samsung - K6F4016S4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2604. K6F4016S6D Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2605. K6F4016S6D-F Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2606. K6F4016S6D-FF70 Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2607. K6F4016S6D-FF85 Samsung - K6F4016S6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2608. K6F4016S6M Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2609. K6F4016S6M-I Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2610. K6F4016S6M-ZI10 Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2611. K6F4016S6M-ZI70 Samsung - K6F4016S6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.4~2.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 35 ; Standby Current(uA) = 10 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2612. K6F4016U4D Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2613. K6F4016U4D-F Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2614. K6F4016U4DFamily Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2615. K6F4016U4D-FF55 Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2616. K6F4016U4D-FF70 Samsung - K6F4016U4D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2617. K6F4016U4E Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2618. K6F4016U4E-EF55 Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2619. K6F4016U4E-EF70 Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2620. K6F4016U4E-F Samsung - K6F4016U4E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2621. K6F4016U4F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2622. K6F4016U4F-EF55 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2623. K6F4016U4F-EF70 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2624. K6F4016U4F-F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2625. K6F4016U4G Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2626. K6F4016U4G-EF55 Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2627. K6F4016U4G-EF70 Samsung - 256kx16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2628. K6F4016U4G-F Samsung - 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F4016U4G families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.The family also supports low data retention voltage for battery back-up operation with low data retention current.
  2629. K6F4016U4M Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2630. K6F4016U4M-I Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2631. K6F4016U4M-ZI10 Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2632. K6F4016U4M-ZI70 Samsung - K6F4016U4M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2633. K6F4016U6C Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2634. K6F4016U6C-F Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2635. K6F4016U6C-FF55 Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2636. K6F4016U6C-FF70 Samsung - K6F4016U6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2637. K6F4016U6D Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2638. K6F4016U6D-F Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2639. K6F4016U6DFamily Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2640. K6F4016U6D-FF55 Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2641. K6F4016U6D-FF70 Samsung - K6F4016U6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2642. K6F4016U6E Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2643. K6F4016U6E-EF55 Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2644. K6F4016U6E-EF70 Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2645. K6F4016U6E-F Samsung - K6F4016U6E 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55, 70 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1.0 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2646. K6F4016U6F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2647. K6F4016U6F-EF55 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2648. K6F4016U6F-EF70 Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2649. K6F4016U6F-F Samsung - K6F4016U4F 256Kx16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Wafer Only
  2650. K6F4016U6G Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2651. K6F4016U6G-EF55 Samsung - K6F4016U6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2652. K6F4016U6G-EF70 Samsung - K6F4016U6G 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 27 ; Standby Current(uA) = 10 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = Product
  2653. K6F4016U6G-F Samsung - 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2654. K6F4016U6M Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2655. K6F4016U6M-I Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2656. K6F4016U6M-ZI10 Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2657. K6F4016U6M-ZI70 Samsung - K6F4016U6M 256K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = i ; Operating Current(mA) = 40 ; Standby Current(uA) = 12 ; Package = 48uBGA ; Production Status = Eol ; Comments = -
  2658. K6F4016V6C Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2659. K6F4016V6C-F Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2660. K6F4016V6C-FF55 Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2661. K6F4016V6C-FF70 Samsung - K6F4016V6C 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2662. K6F4016V6D Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2663. K6F4016V6D-F Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2664. K6F4016V6D-FF55 Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2665. K6F4016V6D-FF70 Samsung - K6F4016V6D 256K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2666. K6F8008R2M Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2667. K6F8008R2M-F Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2668. K6F8008R2M-FF70 Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2669. K6F8008R2M-FF85 Samsung - K6F8008R2M 1M X 8bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2670. K6F8008S2M Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2671. K6F8008S2M-F Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2672. K6F8008S2M-FF70 Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2673. K6F8008S2M-FF85 Samsung - K6F8008S2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA,TSOP ; Production Status = Eol ; Comments = -
  2674. K6F8008U2M Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2675. K6F8008U2M-F Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2676. K6F8008U2M-FF55 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2677. K6F8008U2M-FF70 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2678. K6F8008U2M-RF55 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2679. K6F8008U2M-RF70 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2680. K6F8008U2M-TF55 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2681. K6F8008U2M-TF70 Samsung - K6F8008U2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2682. K6F8008V2M Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2683. K6F8008V2M-F Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2684. K6F8008V2M-FF55 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2685. K6F8008V2M-FF70 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2686. K6F8008V2M-RF55 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2687. K6F8008V2M-RF70 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2688. K6F8008V2M-TF55 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2689. K6F8008V2M-TF70 Samsung - K6F8008V2M 1M X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 1Mx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2,48FBGA ; Production Status = Eol ; Comments = -
  2690. K6F8016R6A Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2691. K6F8016R6A-EF70 Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2692. K6F8016R6A-EF85 Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2693. K6F8016R6A-F Samsung - K6F8016R6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2694. K6F8016R6B Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2695. K6F8016R6B-EF70 Samsung - K6F8016R6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2V ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2696. K6F8016R6B-EF85 Samsung - K6F8016R6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2V ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2697. K6F8016R6B-F Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2698. K6F8016R6C Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2699. K6F8016R6C-F Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2700. K6F8016R6C-FF70 Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2701. K6F8016R6C-FF85 Samsung - K6F8016R6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~1.95 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 17 ; Standby Current(uA) = 10 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2702. K6F8016R6D Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2703. K6F8016R6D-F Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2704. K6F8016R6D-FF70 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F8016R6D families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
  2705. K6F8016R6M Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2706. K6F8016R6M-F Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2707. K6F8016R6M-FF70 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2708. K6F8016R6M-FF85 Samsung - K6F1616R6M 1M X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 1.65~2.2 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2709. K6F8016S6A Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2710. K6F8016S6A-EF70 Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2711. K6F8016S6A-EF85 Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2712. K6F8016S6A-F Samsung - K6F8016S6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 3 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = -
  2713. K6F8016S6M Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2714. K6F8016S6M-F Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2715. K6F8016S6M-FF70 Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2716. K6F8016S6M-FF85 Samsung - K6F8016S6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2717. K6F8016T6C Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2718. K6F8016T6C-FF55 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2719. K6F8016T6C-FF70 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2720. K6F8016U3A Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2721. K6F8016U3A-B Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2722. K6F8016U3A-F Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2723. K6F8016U3A-RB55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2724. K6F8016U3A-RB70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2725. K6F8016U3A-RF55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2726. K6F8016U3A-RF70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2727. K6F8016U3A-TB55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2728. K6F8016U3A-TB70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2729. K6F8016U3A-TF55 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2730. K6F8016U3A-TF70 Samsung - K6F8016U3A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X8016T3B Recommended
  2731. K6F8016U3M Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2732. K6F8016U3M-B Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2733. K6F8016U3M-F Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2734. K6F8016U3M-RB55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2735. K6F8016U3M-RB70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2736. K6F8016U3M-RF55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2737. K6F8016U3M-RF70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2738. K6F8016U3M-TB55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2739. K6F8016U3M-TB70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2740. K6F8016U3M-TF55 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2741. K6F8016U3M-TF70 Samsung - K6F8016U3M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2742. K6F8016U6 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2743. K6F8016U6A Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2744. K6F8016U6A-EF55 Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2745. K6F8016U6A-EF70 Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2746. K6F8016U6A-F Samsung - K6F8016U6A 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 48TBGA ; Production Status = Eol ; Comments = K6F8016U6B Recommended
  2747. K6F8016U6B Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2748. K6F8016U6B-EF55 Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2749. K6F8016U6B-EF70 Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2750. K6F8016U6B-F Samsung - K6F8016U6B 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3V ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 2 ; Standby Current(uA) = 0.5 ; Package = 48TBGA ; Production Status = Mass Production ; Comments = -
  2751. K6F8016U6C Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2752. K6F8016U6C-F Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2753. K6F8016U6C-FF55 Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2754. K6F8016U6C-FF70 Samsung - K6F8016U6C 512K X 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 28 ; Standby Current(uA) = 15 ; Package = 48FBGA ; Production Status = Mass Production ; Comments = Product
  2755. K6F8016U6D Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2756. K6F8016U6D-F Samsung - 512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAMThe K6F8016U6D families are fabricated by SAMSUNG\'s advanced full CMOS process technology.The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
  2757. K6F8016U6D-FF55 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2758. K6F8016U6D-FF70 Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2759. K6F8016U6D-XF55 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2760. K6F8016U6D-XF70 Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2761. K6F8016U6M Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2762. K6F8016U6M-F Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2763. K6F8016U6M-FF55 Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2764. K6F8016U6M-FF70 Samsung - K6F8016U6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2765. K6F8016V3A Samsung - 512k X16 Bit Super Low Power and Low Voltage Full Cmos Static Ram
  2766. K6F8016V3A-F Samsung - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
  2767. K6F8016V3A-RF55 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2768. K6F8016V3A-RF70 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2769. K6F8016V3A-TF55 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2770. K6F8016V3A-TF70 Samsung - K6F8016V3A 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 1 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X8016T3B Recommended
  2771. K6F8016V3M Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2772. K6F8016V3M-B Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2773. K6F8016V3M-F Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2774. K6F8016V3M-RB55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2775. K6F8016V3M-RB70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2776. K6F8016V3M-RF55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2777. K6F8016V3M-RF70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2778. K6F8016V3M-TB55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2779. K6F8016V3M-TB70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2780. K6F8016V3M-TF55 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2781. K6F8016V3M-TF70 Samsung - K6F8016V3M 512K X16 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2782. K6F8016V6M Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2783. K6F8016V6M-F Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2784. K6F8016V6M-FF55 Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2785. K6F8016V6M-FF70 Samsung - K6F8016V6M 512K X 16bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = i ; Operating Current(mA) = 4 ; Standby Current(uA) = 0.5 ; Package = 48FBGA ; Production Status = Eol ; Comments = -
  2786. K6L0908C2A Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2787. K6L0908C2A-B Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2788. K6L0908C2A-C Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2789. K6L0908C2A-F Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2790. K6L0908C2A-GB55 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2791. K6L0908C2A-GB70 Samsung - 64kx8 Bit Low Power Cmos Static Ram
  2792. K6L0908C2A-GF70 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2793. K6L0908C2A-GL55 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2794. K6L0908C2A-GL70 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2795. K6L0908C2A-GP70 Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2796. K6L0908C2A-I Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2797. K6L0908C2A-L Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2798. K6L0908C2A-L/-B Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2799. K6L0908C2A-P Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2800. K6L0908C2A-P/-F Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2801. K6L0908C2A-TB55 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2802. K6L0908C2A-TB70 Samsung - 64Kx8 bit Low Power CMOS Static RAM
  2803. K6L0908C2A-TF70 Samsung - K6L0908C2A 64K X 8 Bit Low Power CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 70 ; Standby Current(uA) = 50 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = -
  2804. K6L0908U2A Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2805. K6L0908U2A-B Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2806. K6L0908U2A-D Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2807. K6L0908U2A-F Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2808. K6L0908U2A-GB10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2809. K6L0908U2A-GB85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2810. K6L0908U2A-GD10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2811. K6L0908U2A-GD85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2812. K6L0908U2A-GF10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2813. K6L0908U2A-GF85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2814. K6L0908U2A-TB10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2815. K6L0908U2A-TB85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2816. K6L0908U2A-TD10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2817. K6L0908U2A-TD85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2818. K6L0908U2A-TF10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2819. K6L0908U2A-TF85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2820. K6L0908U2A-YB10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2821. K6L0908U2A-YB85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2822. K6L0908U2A-YD10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2823. K6L0908U2A-YD85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2824. K6L0908U2A-YF10 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2825. K6L0908U2A-YF85 Samsung - K6L0908U2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2826. K6L0908V2A Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2827. K6L0908V2A-B Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2828. K6L0908V2A-D Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2829. K6L0908V2A-F Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2830. K6L0908V2A-GB10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2831. K6L0908V2A-GB70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2832. K6L0908V2A-GB85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2833. K6L0908V2A-GD10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2834. K6L0908V2A-GD70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2835. K6L0908V2A-GD85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2836. K6L0908V2A-GF10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2837. K6L0908V2A-GF70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2838. K6L0908V2A-GF85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2839. K6L0908V2A-TB10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2840. K6L0908V2A-TB70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2841. K6L0908V2A-TB85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2842. K6L0908V2A-TD10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2843. K6L0908V2A-TD70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2844. K6L0908V2A-TD85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2845. K6L0908V2A-TF10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2846. K6L0908V2A-TF70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2847. K6L0908V2A-TF85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2848. K6L0908V2A-YB10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2849. K6L0908V2A-YB70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2850. K6L0908V2A-YB85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2851. K6L0908V2A-YD10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2852. K6L0908V2A-YD70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2853. K6L0908V2A-YD85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2854. K6L0908V2A-YF10 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2855. K6L0908V2A-YF70 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2856. K6L0908V2A-YF85 Samsung - K6L0908V2A 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 20 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  2857. K6L1016C3B Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2858. K6L1016C3B-B Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2859. K6L1016C3B-F Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2860. K6L1016C3B-RB55 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2861. K6L1016C3B-RB70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2862. K6L1016C3B-RF10 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2863. K6L1016C3B-RF70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2864. K6L1016C3B-TB55 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2865. K6L1016C3B-TB70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2866. K6L1016C3B-TF10 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2867. K6L1016C3B-TF70 Samsung - K6L1016C3B 64K X 16 Bit Low Power CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 120 ; Standby Current(uA) = 20,50 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2868. K6L1016U3B Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2869. K6L1016U3B-B Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2870. K6L1016U3B-F Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2871. K6L1016U3B-RB10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2872. K6L1016U3B-RF10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2873. K6L1016U3B-TB10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2874. K6L1016U3B-TF10 Samsung - K6L1016U3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2875. K6L1016V3B Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2876. K6L1016V3B-B Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2877. K6L1016V3B-F Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2878. K6L1016V3B-RB70 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2879. K6L1016V3B-RF85 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2880. K6L1016V3B-TB70 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2881. K6L1016V3B-TF85 Samsung - K6L1016V3B 64K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(uA) = 15,20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  2882. K6R1004C1A Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2883. K6R1004C1A-12 Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2884. K6R1004C1A-15 Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2885. K6R1004C1A-20 Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2886. K6R1004C1A-C Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2887. K6R1004C1A-J Samsung - K6R1004C1A 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 8 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2888. K6R1004C1B Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2889. K6R1004C1B-10 Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2890. K6R1004C1B-12 Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2891. K6R1004C1B-8 Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2892. K6R1004C1B-C Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2893. K6R1004C1B-J Samsung - K6R1004C1B 256Kx4 Bit(with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2894. K6R1004C1C Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2895. K6R1004C1C-10 Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2896. K6R1004C1C-12 Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2897. K6R1004C1C-15 Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2898. K6R1004C1C-C Samsung - 256kx4 Bit (with Oe) High-speed Cmos Static Ram(5.0v Operating).
  2899. K6R1004C1C-C10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2900. K6R1004C1C-C12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2901. K6R1004C1C-C15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2902. K6R1004C1C-C20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2903. K6R1004C1C-I Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2904. K6R1004C1C-I10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2905. K6R1004C1C-I12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2906. K6R1004C1C-I15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2907. K6R1004C1C-I20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2908. K6R1004C1C-J Samsung - K6R1004C1C 256Kx4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 30 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004C1D
  2909. K6R1004C1C-L Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2910. K6R1004C1C-P Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2911. K6R1004C1D Samsung - 256kx4 Bit (with Oe) High-speed Cmos Static Ram(5.0v Operating).
  2912. K6R1004C1D-10 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2913. K6R1004C1D-12 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2914. K6R1004C1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2915. K6R1004C1D-JC10 Samsung - 64kx16 Bit High-speed Cmos Static Ram(3.3v Operating) Operated At Commercial and Industrial Temperature Ranges.
  2916. K6R1004C1D-JC12 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2917. K6R1004C1D-JCI10/12 Samsung - 64kx16 Bit High-speed CMOS Static RAM (3.3v Operating) Operated at Commercial and Industrial Temperature Ranges.
  2918. K6R1004C1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2919. K6R1004C1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2920. K6R1004C1D-JI12 Samsung - K6R1004C1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM ; Organization = 256Kx4 ; Vcc(V) = 5 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2921. K6R1004C1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2922. K6R1004C1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2923. K6R1004C1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2924. K6R1004C1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2925. K6R1004V1A Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2926. K6R1004V1A-12 Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2927. K6R1004V1A-15 Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2928. K6R1004V1A-20 Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2929. K6R1004V1A-C Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2930. K6R1004V1A-J Samsung - K6R1004V1A 256K X 4 Bit(with OE) High-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C ; Operating Current(mA) = 130 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2931. K6R1004V1B Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2932. K6R1004V1B-10 Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2933. K6R1004V1B-12 Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2934. K6R1004V1B-8 Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2935. K6R1004V1B-C Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2936. K6R1004V1B-J Samsung - K6R1004V1B 256K X 4 Bit (with Oe)high-speed CMOS Static RAM(3.3V Operating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  2937. K6R1004V1C Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2938. K6R1004V1C-10 Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2939. K6R1004V1C-12 Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2940. K6R1004V1C-15 Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2941. K6R1004V1C-C Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2942. K6R1004V1C-C10 Samsung - 256kx4 Bit (with Oe) High-speed Cmos Static Ram(3.3v Operating).
  2943. K6R1004V1C-C12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2944. K6R1004V1C-C15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2945. K6R1004V1C-C20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2946. K6R1004V1C-C/C-L Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2947. K6R1004V1C-I Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2948. K6R1004V1C-I10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2949. K6R1004V1C-I12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2950. K6R1004V1C-I15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2951. K6R1004V1C-I20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2952. K6R1004V1C-I/C-P Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2953. K6R1004V1C-J Samsung - K6R1004V1C 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 75,70,68 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Eol ; Comments = Converted Into K6R1004V1D
  2954. K6R1004V1C-L Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2955. K6R1004V1C-L10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2956. K6R1004V1C-L12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2957. K6R1004V1C-L15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2958. K6R1004V1C-L20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2959. K6R1004V1C-P Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2960. K6R1004V1C-P10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2961. K6R1004V1C-P12 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2962. K6R1004V1C-P15 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2963. K6R1004V1C-P20 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
  2964. K6R1004V1D Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2965. K6R1004V1D-08 Samsung - K6R1004V1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2966. K6R1004V1D-10 Samsung - K6R1004V1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2967. K6R1004V1D-J Samsung - K6R1004V1D 256Kx4 Bit (with OE) High-speed CMOS Static RAM(3.3VOperating) ; Organization = 256Kx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  2968. K6R1004V1D-JC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2969. K6R1004V1D-JC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2970. K6R1004V1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2971. K6R1004V1D-JC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2972. K6R1004V1D-JCI08/10 Samsung - 64kx16 Bit High-speed CMOS Static RAM (3.3v Operating) Operated at Commercial and Industrial Temperature Ranges.
  2973. K6R1004V1D-JI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2974. K6R1004V1D-JI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2975. K6R1004V1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2976. K6R1004V1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2977. K6R1004V1D-KC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2978. K6R1004V1D-KC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2979. K6R1004V1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2980. K6R1004V1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2981. K6R1004V1D-KI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2982. K6R1004V1D-KI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2983. K6R1004V1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  2984. K6R1004V1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  2985. K6R1008C1A- Samsung - 128kx8 High Speed Static Ram5v Operating, Revolutionary Pin Out. Operated At Commercial and Industrial Temperature Ranges.
  2986. K6R1008C1A-12 Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2987. K6R1008C1A-15 Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2988. K6R1008C1A-20 Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2989. K6R1008C1A-C Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2990. K6R1008C1A-C12 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2991. K6R1008C1A-C15 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2992. K6R1008C1A-C20 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2993. K6R1008C1A-I Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2994. K6R1008C1A-I12 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2995. K6R1008C1A-I15 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2996. K6R1008C1A-I20 Samsung - 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  2997. K6R1008C1A-J Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2998. K6R1008C1A-T Samsung - K6R1008C1A 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 8 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  2999. K6R1008C1B- Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  3000. K6R1008C1B-10 Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
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