K6R1008C1B-12 Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
K6R1008C1B-8 Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
K6R1008C1B-C Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
K6R1008C1B-C10 Samsung - 128kx8 Bit High Speed Static Ram5v Operating, Revolutionary Pin Out. Operated At Commercial and Industrial Temperature Ranges.
K6R1008C1B-C12 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-C8 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-I Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
K6R1008C1B-I10 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-I12 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-I8 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-J Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
K6R1008C1B-T Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
K6R1008C1C- Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-10 Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
K6R1008C1C-12 Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
K6R1008C1C-15 Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
K6R1008C1C-C10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-C12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-C15 Samsung - 128kx8 Bit High-speed Cmos Static Ram(5v Operating). Operated At Commercial and Industrial Temperature Ranges.
K6R1008C1C-C/C-L Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
K6R1008C1C-I10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-I12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-I15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-I/C-P Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
K6R1008C1C-J Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
K6R1008C1C-J10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-J12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-J15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-L10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-L12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-L15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-P10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-P12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-P15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-T Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
K6R1008C1C-T10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-T12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-T15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D Samsung - 64kx16 Bit High-speed Cmos Static Ram(3.3v Operating) Operated At Commercial and Industrial Temperature Ranges.
K6R1008C1D-10 Samsung - K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
K6R1008C1D-12 Samsung - K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
K6R1008C1D-J Samsung - K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
K6R1008V1B-B-L Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-B-P Samsung - 128kx8 Bit High Speed Static Ram(3.3v Operating), Revolutionary Pin Out. Operated At Commercial and Industrial Temperature Ranges
K6R1008V1B-C10 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-C12 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-C8 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-C-L Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-I10 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-I12 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-I8 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-I-P Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R4016V1C Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-10 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-12 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-15 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-C Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-C10 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-C12 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-C15 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-C/C-L Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-I Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-I10 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-I12 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-I15 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-I/C-P Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-J Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1C-T Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
K6R4016V1D Samsung - 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4016V1D Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
K6R4016V1D-08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EC08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EC10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EI08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EI10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EL08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EL10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EP08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-EP10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-J Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JC Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
K6R4016V1D-JC08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JC10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JI08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JI10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JL08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JL10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JP08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-JP10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-T Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TC08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TC10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TI08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TI10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TL08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TL10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TP08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6R4016V1D-TP10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
K6T0808C1D Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-B Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-DB55 Samsung - 32kx8 Bit Low Power Cmos Static Ram
K6T0808C1D-DB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-DL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-DL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-F Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-GB55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-GB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-GF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-GL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-GL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-GP70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-L Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-L/-B Samsung - K6T0808C1D 32K X 8 Bit Low Power CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X0808C1D Recommended
K6T0808C1D-P Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-P/-F Samsung - K6T0808C1D 32K X 8 Bit Low Power CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X0808C1D Recommended
K6T0808C1D-RB55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-RB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-RF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-RL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-RL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-RP70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-TB55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-TB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-TF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-TL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-TL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808C1D-TP70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6T0808U1D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808U1D-B Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808U1D-D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808U1D-F Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808U1D-GB10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GB70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GB85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GD10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GD70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GD85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GF10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GF70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-GF85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RB10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RB70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RB85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RD10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RD70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RD85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RF10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RF70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-RF85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TB10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TB70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TB85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TD10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TD70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TD85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TF10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TF70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808U1D-TF85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
K6T0808V1D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-B Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-F Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-GB70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-GD70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-GF70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-RB10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-RB70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-RD10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-RD70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-RF10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-RF70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-TB10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-TB70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-TD10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-TD70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-TF10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0808V1D-TF70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
K6T0908U2B Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908U2B-B Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908U2B-F Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908U2B-L Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908U2B-P Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908U2B-TB10 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908U2B-TB85 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908U2B-TF10 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908U2B-TF85 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908U2B-YF10 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908U2B-YF85 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
K6T0908V2B Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-B Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-F Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-TB10 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-TB85 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-TF10 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-TF85 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-YF10 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T0908V2B-YF85 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T1008C2C Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-B Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-DB55 Samsung - 128k X8 Bit Low Power Cmos Static Ram
K6T1008C2C-DB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-DL55 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-DL70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-F Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-GB55 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-GB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-GF70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-GL55 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-GL70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-GP70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-L Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-P Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-RB55 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-RB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-RF70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-TB55 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-TB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2C-TF70 Samsung - 128K x8 bit Low Power CMOS Static RAM
K6T1008C2E Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-B Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DL55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DL70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-F Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GL55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GL70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GP55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GP70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-L Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-P Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-RB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-RB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-RF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-RF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-TB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-TB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-TF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-TF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6T1008S2E Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
K6T1008S2E-F Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
K6T1008S2E-P Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
K6T1008S2E-TF10 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
K6T1008S2E-TF85 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
K6T1008S2E-YF10 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
K6T1008S2E-YF85 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
K6T1008U2C Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-B Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-D Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-F Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2CFamily Samsung - K6T1008V2C 128K X 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = Converted Into K6T1008V2E
K6T1008U2C-GB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-GB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-GD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-GD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-GF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-GF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-NB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-NB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-ND10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-ND85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-NF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-NF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-RB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-RB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-RD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-RD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-RF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-RF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-TB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-TB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-TD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-TD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-TF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-TF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-YB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-YB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-YD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-YD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-YF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2C-YF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008U2E Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-B Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-F Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-GB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-GB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-GF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-GF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-NB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-NB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-NF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-NF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-RB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-RB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-RF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-RF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-TB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-TB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-TF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-TF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-YB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-YB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-YF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008U2E-YF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2C Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-B Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-D Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-F Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-NB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-NB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-ND10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-ND70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-NF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-NF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-RB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-RB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-RD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-RD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-RF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-RF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-TB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-TB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-TD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-TD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-TF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-TF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-YB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-YB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-YD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-YD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-YF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-YF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2E Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-B Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-F Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-GB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-GB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-GF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-GF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-NB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-NB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-NF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-NF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-RB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-RB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-RF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-RF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-TB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-TB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-TF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-TF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-YB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-YB55 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-YB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-YF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-YF55 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T1008V2E-YF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
K6T2008S2A Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
K6T2008S2A-F Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
K6T2008S2A-FF10 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
K6T2008S2A-FF85 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
K6T2008S2A-YF10 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
K6T2008S2A-YF85 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
K6T2008S2M Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-B Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-F Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-L Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-P Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-TB12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-TB15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-TF12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-TF15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-YB12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-YB15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-YF12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008S2M-YF15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2A Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-B Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-F Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-FF70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-FF85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-TB10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-TB70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-TB85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-TF10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-TF70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-TF85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-YB10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-YB70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-YB85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-YF10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-YF70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2A-YF85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008U2M Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-B Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-F Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-TB10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-TB85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-TF10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-TF85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-YB10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-YB85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-YF10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008U2M-YF85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2A Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-B Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-F Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-FF70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-FF85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-TB70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-TB85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-TF10 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-TF70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-TF85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-YB70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-YB85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-YF10 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-YF70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2A-YF85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
K6T2008V2M Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-B Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-F Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-TB70 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-TB85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-TF10 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-TF85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-YB70 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-YB85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-YF10 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2008V2M-YF85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
K6T2016S3M Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-B Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-F Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-L Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-P Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-TB12 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-TB15 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-TF12 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016S3M-TF15 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-B Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-F Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-L Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-P Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-TB10 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-TB85 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-TF10 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T2016U3M-TF85 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4008C Samsung - 512kx8 Bit Low Power Cmos Static Ram
K6T4008C Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-B Samsung - 512kx8 Bit Low Power Cmos Static Ram
K6T4008C1B-DB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-DB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-DL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-DL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-F Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GP55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-GP70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-L Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-MF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-P Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-VB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-VB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-VF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-VF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-B Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-DB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-DB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-DL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-DL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-F Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GP55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-GP70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-L Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-MB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-MB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-MF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-MF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-P Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-VB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-VB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-VF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008C1C-VF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
K6T4008S1C Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-F Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-MF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-MF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-TF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-TF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-VF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-VF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-YF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008S1C-YF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
K6T4008U1B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-F Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-GB10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-GB85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-GF10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-GF85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-MB10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-MB85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-MF10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-MF85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-VB10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-VB85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-VF10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1B-VF85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008U1C Samsung - K6T4008U1C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X4008T1F Recommended
K6T4008U1C-B Samsung - 512kx8 Bit Low Power and Low Voltage Cmos Static Ram
K6T4008U1C-F Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-GB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-GB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-GB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-GF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-GF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-GF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-MB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-MB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-MB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-MF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-MF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-MF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-TB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-TB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-TB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-TF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-TF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-TF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-VB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-VB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-VB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-VF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-VF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-VF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-YB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-YB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-YB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-YF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-YF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U1C-YF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008U2C Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
K6T4008U2C-F Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
K6T4008U2C-ZF10 Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
K6T4008U2C-ZF70 Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
K6T4008U2C-ZF85 Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
K6T4008V1B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-F Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-GB10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-GB70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-GB80 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-GF10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-GF70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-GF85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-MB10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-MB70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-MB85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-MF10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-MF70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-MF85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-VB10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-VB70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-VB85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-VF10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-VF70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1B-VF85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
K6T4008V1C Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-B Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-F Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-GB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-GB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-GF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-GF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-MB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-MB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-MF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-MF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-TB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-TB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-TF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-TF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-VF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V1C-YF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T4008V2C Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
K6T4008V2C-F Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
K6T4008V2C-ZF70 Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
K6T4008V2C-ZF85 Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
K6T4016C3B Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-B Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-F Samsung - 256kx16 Bit Low Power Cmos Static Ram
K6T4016C3B-RB55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-RB70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-RF10 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-RF55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-RF70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-TB55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-TB70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-TF10 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-TF55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3B-TF70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
K6T4016C3C Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-B Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-F Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-RB55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-RB70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-RF55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-RF70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-TB55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-TB70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-TF55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016C3C-TF70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
K6T4016S3C Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016S3C-F Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016S3C-RF10 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016S3C-RF12 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016S3C-TF10 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016S3C-TF12 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016S6C Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016S6C-F Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016S6C-ZF10 Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016S6C-ZF12 Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U3B Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-B Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-F Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-RB10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-RB85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-RF10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-RF85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-TB10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-TB85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-TF10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3B-TF85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016U3C Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-B Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-F Samsung - 256kx16 Bit Low Power and Low Voltage Cmos Static Ram
K6T4016U3C-RB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-RF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U3C-TF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016U4C Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U4C-F Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U4C-ZF10 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U4C-ZF70 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U4C-ZF85 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U6C Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U6C-F Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U6C-ZF10 Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U6C-ZF70 Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016U6C-ZF85 Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016V3B Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-B Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-F Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-RB70 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-RB85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-RF10 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-RF85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-TB70 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-TB85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-TF10 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3B-TF85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
K6T4016V3C Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-B Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-F Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-RB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-RB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-RB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-RF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-RF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-RF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-TB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-TB55 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-TB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-TB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-TF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-TF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C-TF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V4C Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016V4C-F Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016V4C-ZF10 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016V4C-ZF70 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T4016V4C-ZF85 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
K6T8008C2M Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-B Samsung - 1mx8 Bit Low Power and Low Voltage Cmos Static Ram
K6T8008C2M-F Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-RB55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-RB70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-RF55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-RF70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-TB55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-TB70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-TF55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8008C2M-TF70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6T8016C3M Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-B Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-F Samsung - 512kx16 Bit Low Power Cmos Static Ram
K6T8016C3M-RB55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-RB70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-RF55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-RF70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TB55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TB70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TF55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6T8016C3M-TF70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
K6X0808C1D Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-DF55 Samsung - 32kx8 Bit Low Power Cmos Static Ram
K6X0808C1D-DF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-F Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-GF55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-GF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-GQ55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-GQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-Q Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-RF55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-RF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-TF55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-TF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-TQ55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808C1D-TQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-B Samsung - 32kx8 Bit Low Power Cmos Static Ram
K6X0808T1D-F Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-GB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-GB85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-GF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-GF85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-GQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-GQ85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-NB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-NB85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-NF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-NF85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-Q Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-YB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-YB85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-YF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-YF85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-YQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X0808T1D-YQ85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
K6X1008C2D Samsung - 128kx8 Bit Low Power Cmos Static Ram
K6X1008C2D-B Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-BB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-BB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-BF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-BF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-DB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-DB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-DF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-DF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-F Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-GB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-GB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-GF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-GF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-GQ55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-GQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-PB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-PB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-PF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-PF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-Q Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-TB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-TB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-TF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-TF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-TQ55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D-TQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-B Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-BB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-BB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-BF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-BF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-BF85 Samsung - 128kx8 Bit Low Power Cmos Static Ram
K6X1008T2D-F Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GB551 Samsung - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
K6X1008T2D-GB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GF85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-GQ85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-PB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-PB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-PB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-PF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-PF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-PF85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-Q Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TB551 Samsung - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
K6X1008T2D-TB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TF551 Samsung - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
K6X1008T2D-TF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TF85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D-TQ85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
K6X4008C1F Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-B Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BB70 Samsung - 512kx8 Bit Low Power Full Cmos Static Ram
K6X4008C1F-BF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-BF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-DB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-DB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-DF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-DF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-F Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-GB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-GB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-GF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-GF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-GQ55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-GQ70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-MB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-MB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-MF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-MF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-Q Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VQ55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008C1F-VQ70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
K6X4008T1F Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-B Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-F Samsung - 512kx8 Bit Low Power and Low Voltage Cmos Static Ram
K6X4008T1F-GB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-GB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-GF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GQ70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-GQ85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-MB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-MB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-MB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-MB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-MF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-MF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-MF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-MF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-Q Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-VB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-VF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VQ70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-VQ85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-YB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4008T1F-YF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YQ70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4008T1F-YQ85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6X4016C3F Samsung - 256kx16 Bit Low Power Full Cmos Static Ram
K6X4016C3F-B Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-F Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-Q Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-TB55 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-TB70 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-TF55 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-TF70 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-TQ55 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F-TQ70 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
K6X4016T3F Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-B Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-F Samsung - 256kx16 Bit Low Power and Low Voltage Cmos Static Ram
K6X4016T3F-Q Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TB55 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TB551 Samsung - K6X4016T3F 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 40 ; Standby Current(uA) = 20,30 ; Package = 44TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4016T3F-TB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TF55 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TF551 Samsung - K6X4016T3F 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 40 ; Standby Current(uA) = 20,30 ; Package = 44TSOP2 ; Production Status = Mass Product ; Comments = Product
K6X4016T3F-TF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TQ70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016T3F-TQ85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-B Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-F Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-Q Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-TB55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-TB70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-TF55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-TF70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-TQ55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K6X8008C2B-TQ70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
K7A161800A-QC(I)25/16/14 Samsung - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A163600A and K7A161800A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A161830B Samsung - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A161830B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A161830B-Q(P)C(I)25/16 Samsung - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A161830B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A163600A-QC(I)25/16/14 Samsung - 512Kx36 -Bit Synchronous Pipelined Burst SRAMThe K7A163600A and K7A161800A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
K7A163601A-QC(I)20/16 Samsung - 512Kx36 -Bit Synchronous Pipelined Burst SRAMThe K7A163601A and K7A161801A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
K7A163630B Samsung - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163630B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A163630B-Q(P)C(I)25/16 Samsung - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163630B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A163631B-Q(P)C(I)20 Samsung - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163631B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A321800M-QC(I)25/20/14 Samsung - 1Mx36 Bit Synchronous Pipelined Burst SRAMThe K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
K7A323600M-QC(I)25/20/14 Samsung - 1Mx36 Bit Synchronous Burst SRAMThe K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A401800B-QC(I)16/14 Samsung - 256Kx18-Bit Synchronous Pipelined Burst SRAMhe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A403200B-QC(I)16/14 Samsung - 128Kx32 Bit Synchronous Pipelined Burst SRAMThe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System
K7A403600B-QC(I)16/14 Samsung - 128Kx36 Bit Synchronous Pipelined Burst SRAMThe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A403609B-QC(I)30/27/25/22/20 Samsung - 128Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A403609B, K7A403209B and K7A401809B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A801800B-QC(I)16/14 Samsung - 512Kx18-Bit Synchronous Pipelined Burst SRAMhe K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A803600B-QC(I)16/14 Samsung - 256Kx36 Bit Synchronous Pipelined Burst SRAMThe K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7A803609B-QC(I)25 Samsung - 256Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A803609B and K7A801809B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications;
K7B161825A-QC(I)75/85 Samsung - 512Kx36 -Bit Synchronous Burst SRAMThe K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7B161835B Samsung - 1Mx18-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7B161835B-Q(P)C(I)75 Samsung - 1Mx18-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7B163625A-QC(I)75/85 Samsung - 1Mx18-Bit Synchronous Burst SRAMThe K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7B163635B Samsung - 512Kx36-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7B163635B-Q(P)C(I)75 Samsung - 512Kx36-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7B321825M-QC65/75 Samsung - 1Mx36 Bit Synchronous Pipelined Burst SRAMThe K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
K7B401825B-Q(P)C(I)65/75 Samsung - 256Kx18-Bit Synchronous Burst SRAMThe K7B403625B and K7B401825B are 4,718,592 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.
K7B403625B-Q(P)C(I)65/75 Samsung - 128Kx36 Bit Synchronous Burst SRAMThe K7B403625B and K7B401825B are 4,718,592 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.
K7B803625B-Q(P)C(I)65/75 Samsung - 512Kx18-Bit Synchronous Burst SRAMThe K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
K7D161871M Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D161871M-HC30 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D161871M-HC33 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D161871M-HC37 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D161871M-HC40 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D161874B Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D161874B-HC27 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D161874B-HC30 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D161874B-HC33 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D161874B-HC37 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D163671M Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D163671M-HC30 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D163671M-HC33 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D163671M-HC37 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D163671M-HC40 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
K7D163674B Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D163674B-HC27 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D163674B-HC30 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D163674B-HC33 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D163674B-HC37 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
K7D321874C Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7D321874C-H(G)C33 Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7D321874C-H(G)C37 Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7D321874C-H(G)C40 Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7D323674C Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7D323674C-H(G)C33 Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7D323674C-H(G)C37 Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7D323674C-H(G)C40 Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
K7M161825A-QC(I)65/75 Samsung - 1Mx18-Bit Flow Through NtRAM™The K7M163625A and K7M161825A are 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
K7M161835B Samsung - 1Mx18-Bit Flow Through NtRAM™The K7M161835B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7M161835B-Q(P)C(I)65 Samsung - 1Mx18-Bit Flow Through NtRAM™The K7M161835B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7M163625A-QC(I)65/75 Samsung - 512Kx36-Bit Flow Through NtRAM™The K7M163625A and K7M161825A are 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
K7M163635B Samsung - 512Kx36-Bit Flow Through NtRAM™The K7M163635B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7M163635B-Q(P)C(I)65 Samsung - 512Kx36-Bit Flow Through NtRAM™The K7M163635B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7M321825M-FC65 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M321825M-FC75 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M321825M-FC85 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M321825M-HC65 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M321825M-HC75 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M321825M-HC85 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M321825M-Q(P)C65/75 Samsung - 2Mx18-Bit Flow Through NtRAM™he K7M321825M is 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
K7M321825M-QC65 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M323625M-FC65 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M323625M-FC75 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M323625M-FC85 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M323625M-HC65 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M323625M-HC75 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M323625M-HC85 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7M323625M-Q(P)C65/75 Samsung - 1Mx36-Bit Flow Through NtRAM™The K7M323625M is 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
K7M323625M-QC65 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
K7N04FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
K7N161801A Samsung - 1Mx18-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N161801A-Q(F)C(I)25/20/16/13 Samsung - 1Mx18-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N161831B-Q(F,E,P)C(I)25/16 Samsung - 1Mx18-Bit Pipelined NtRAM™The K7N161831B is 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N163601A Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
K7N163601A-Q(F)C(I)25/20/16/13 Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
K7N163631B-Q(F,E,P)C(I)25/16 Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163631B is 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N163645A-Q(F)C(I)25/20/16/13 Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163645A and K7N161845A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N321801M-Q(F)C25/20/16/13 Samsung - 2Mx18-Bit Pipelined NtRAM™The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N321845M Samsung - 2Mx18-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N321845M-Q(F)C25/20/16/13 Samsung - 2Mx18-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N323601M-Q(F)C25/20/16/1 Samsung - 1Mx36 Bit Pipelined NtRAM™The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N323645M-Q(F)C25/20/16/13 Samsung - 1Mx36-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N323645M-QC25/20/16/13 Samsung - 1Mx36-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N641845M-Q(F)C25/16 Samsung - 4Mx18Bit Pipelined NtRAM™The K7N641845M is 75,497,472-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7N643645M-Q(F)C25/16 Samsung - 2Mx36Bit Pipelined NtRAM™The K7N643645M is 75,497,472-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
K7P321866M-H(G)C25 Samsung - 2Mx18 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
K7P321874C Samsung - 2Mx18 Synchronous Pipelined SRAMThe K7P321874C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 2,097,152 words of 18 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
K7P321888M Samsung - 2Mx18 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
K7P321888M-H(G)C30 Samsung - 2Mx18 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
K7P323666M-H(G)C30 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
K7P323666M-HC300 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
K7P323666M-HC30T Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
K7P323674C Samsung - 1Mx36 Synchronous Pipelined SRAMThe K7P323674C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 1,048,576 words of 36 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
K7P323674C-H(G)C25 Samsung - 2Mx18 Synchronous Pipelined SRAMThe K7P321874C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 2,097,152 words of 18 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
K7P323674C-H(G)C30 Samsung - 1Mx36 Synchronous Pipelined SRAMThe K7P323674C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 1,048,576 words of 36 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
K7P323688M Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
K7P323688M-H(G)C25 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
K7P323688M-H(G)C30 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
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