K9E2G08U0M Samsung - 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-F Samsung - 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-P Samsung - 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-V Samsung - 256m X 8 Bits Nand Flash Memory
K9E2G08U0M-Y Samsung - 256M x 8 Bits NAND Flash Memory
K9F1208B0B Samsung - 64m X 8 Bit Nand Flash Memory
K9F1208B0B-G,J Samsung - 64M x 8 Bit NAND Flash MemoryOffered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.The device is offered in 1.8V, 2.7V, 3.3V Vcc.
K9F1208B0B-Y,P Samsung - 64M x 8 Bit NAND Flash MemoryOffered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.The device is offered in 1.8V, 2.7V, 3.3V Vcc.
K9F1208D0A Samsung - 64M x 8 Bit, 32M x 16 Bit NAND Flash Memory
K9F1208D0A-P Samsung - 64m X 8 Bit, 32m X 16 Bit Nand Flash Memory
K9F1208D0A-Y Samsung - 64M x 8 Bit, 32M x 16 Bit NAND Flash Memory
K9F1208D0B Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208D0B-D Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208D0B-Y Samsung - 64m X 8 Bit Nand Flash Memory
K9F1208Q0B Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208R0B Samsung - 64M x 8 Bit NAND Flash Memory
K9F1208R0B-G,J Samsung - 64M x 8 Bit NAND Flash MemoryOffered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.The device is offered in 1.8V, 2.7V, 3.3V Vcc.
K9F1G08R0A Samsung - 128m X 8 Bit / 256m X 8 Bit Nand Flash Memory
K9F1G08R0A-J Samsung - 256M x 8 Bit NAND Flash MemoryOffered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typical 200µs on the 2112-byte page and an erase operation can be performed in typical 2ms onA 128K-byte block.
K9F1G08U0A Samsung - 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0A-F Samsung - 256M x 8 Bit NAND Flash MemoryOffered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typical 200µs on the 2112-byte page and an erase operation can be performed in typical 2ms onA 128K-byte block.
K9F1G08U0A-J Samsung - 256M x 8 Bit NAND Flash MemoryOffered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typical 200µs on the 2112-byte page and an erase operation can be performed in typical 2ms onA 128K-byte block.
K9F1G08U0A-P Samsung - 256M x 8 Bit NAND Flash MemoryOffered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typical 200µs on the 2112-byte page and an erase operation can be performed in typical 2ms onA 128K-byte block.
K9F1G08U0M Samsung - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F2G08U0M-P Samsung - K9F2G08U0M 256M X 8 Bit NAND Flash Memory ; Organization = 256Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um
K9F2G08U0M-PCB0 Samsung - K9F2G08U0M 256M X 8 Bit NAND Flash Memory ; Organization = 256Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um
K9F2G08U0M-PIB0 Samsung - K9F2G08U0M 256M X 8 Bit NAND Flash Memory ; Organization = 256Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um
K9F2G08U0M-Y Samsung - K9F2G08U0M 256M X 8 Bit NAND Flash Memory ; Organization = 256Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um
K9F2G08U0M-Y,P Samsung - 512M x 8 Bit NAND Flash MemoryOffered in 256Mx8bit or 128Mx16bit, the K9F2GXXU0M is 2G bit with spare 64M bit capacity.Its NAND cell provides the most costeffective solution for the solid state mass storage market.
K9F4G08U0M Samsung - 512m X 8 Bits / 1g X 8 Bits Nand Flash Memory
K9F4G08U0M-I Samsung - 512M x 8 Bit NAND Flash MemoryOffered in 512Mx8bit, the K9F4G08U0M isA 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
K9F4G08U0M-Y,P Samsung - 1G x 8 Bit NAND Flash MemoryOffered in 512Mx8bit, the K9F4G08U0M isA 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
K9F5608D0C Samsung - 32M x 8 Bit, 16M x 16 Bit NAND Flash Memory
K9F5608D0C Samsung - 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608D0C-D Samsung - 32m X 8 Bit, 16m X 16 Bit Nand Flash Memory
K9F5608D0C-D Samsung - 32m X 8 Bit 16m X 16 Bit Nand Flash Memory
K9F5608D0C-H Samsung - 32M x 8 Bit, 16M x 16 Bit NAND Flash Memory
K9F5608D0C-H Samsung - 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608D0C-P Samsung - 32M x 8 Bit, 16M x 16 Bit NAND Flash Memory
K9F5608D0C-P Samsung - 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608D0C-Y Samsung - 32M x 8 Bit, 16M x 16 Bit NAND Flash Memory
K9F5608D0C-Y Samsung - 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608D0D Samsung - 32M x 8 Bit NAND Flash Memory
K9K1216D0C Samsung - 64M x 8 Bit, 32M x 16 Bit NAND Flash Memory
K9K1216D0C-D Samsung - K9K1216D0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 2.4~2.9 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216D0C-H Samsung - K9K1216D0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 2.4~2.9 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216Q0C Samsung - 64M x 8 Bit, 32M x 16 Bit NAND Flash Memory
K9K1216Q0C-D Samsung - K9K1216Q0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 1.7~1.95 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216Q0C-H Samsung - K9K1216Q0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 1.7~1.95 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216Q0C-HCB0 Samsung - K9K1216Q0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 1.7~1.95 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216Q0C-HIB0 Samsung - K9K1216Q0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 1.7~1.95 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216U0C Samsung - 64M x 8 Bit, 32M x 16 Bit NAND Flash Memory
K9K1216U0C-D Samsung - K9K1216U0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216U0C-H Samsung - K9K1216U0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216U0C-HCB0 Samsung - K9K1216U0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1216U0C-HIB0 Samsung - K9K1216U0C 32M X 16 Bit NAND Flash Memory ; Organization = 32Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 63TBGA ; Production Status = Mass Production ; Comments = 0.12um
K9K1G08B0B Samsung - 128m X 8 Bit Nand Flash Memory
K9K1G08B0B-G,J Samsung - 128M x 8 Bit NAND Flash MemoryThe K9K1G08X0B isA 128M(134,217,728) x 8bit NAND Flash Memory withA spare 4.096K(4,194,304)x8bit.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typically 200µs on the 528-byte page and an erase operation can be performed in typically 2ms onA 16K-byte block. Data in the data register can be read out at 50ns(1.8V device : TBD) cycle time per byte. The I/O pins serve as the ports for addres
K9K1G08Q0A Samsung - 128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
K9K1G08Q0A-G Samsung - K9K1G08Q0A 64M X 16 Bit NAND Flash Memory ; Organization = 64Mx16 ; Operating Voltage(V) = 1.70~1.95 ; Temperature = C,i ; Speed(ns) = 60 ; Package = 48TSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08Q0A-J Samsung - K9K1G08Q0A 64M X 16 Bit NAND Flash Memory ; Organization = 64Mx16 ; Operating Voltage(V) = 1.70~1.95 ; Temperature = C,i ; Speed(ns) = 60 ; Package = 48TSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08R0B Samsung - 128M x 8 Bit NAND Flash Memory
K9K1G08R0B-G,J Samsung - 128M x 8 Bit NAND Flash MemoryThe K9K1G08X0B isA 128M(134,217,728) x 8bit NAND Flash Memory withA spare 4.096K(4,194,304)x8bit.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typically 200µs on the 528-byte page and an erase operation can be performed in typically 2ms onA 16K-byte block. Data in the data register can be read out at 50ns(1.8V device : TBD) cycle time per byte. The I/O pins serve as the ports for addres
K9K1G08U0A Samsung - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 Samsung - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A_F Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-FCB00 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-FIB0 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-G Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-J Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-P Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-PCB0 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-PIB0 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A_V Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-VCB0 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-VIB0 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-Y Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-YCB0 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0A-YIB0 Samsung - K9K1G08U0A 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1,48WSOP1,63FBGA ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(512Mb*2)
K9K1G08U0B Samsung - 128M x 8 Bit NAND Flash Memory
K9K1G08U0B-G,J Samsung - 128M x 8 Bit NAND Flash MemoryThe K9K1G08X0B isA 128M(134,217,728) x 8bit NAND Flash Memory withA spare 4.096K(4,194,304)x8bit.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
K9K1G08U0M Samsung - K9K1G08U0M 128M X 8 Bit NAND Flash Memory ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.15um,Dual Die(512Mb*2)
K9K2G16Q0M Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-P Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-PCB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-PIB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-Y Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YCB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YIB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-PCB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-PIB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YCB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YIB0 Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K4G08Q0M Samsung - 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G08U0M Samsung - 512m X 8 Bit / 256m X 16 Bit Nand Flash Memory
K9K4G08U0M-Y,P Samsung - 1G x 8 Bit NAND Flash MemoryOffered in 512Mx8bit, the K9K4G08U0M is 4G bit with spare 128M bit capacity.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typical 200µs on the 2112-byte page and an erase operation can be performed in typical 2ms onA 128K-byte block.
K9K4G08U1M Samsung - 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9K4G08U1M-I Samsung - 512M x 8 Bit NAND Flash MemoryOffered in 256Mx8bit or 128Mx16bit, the K9F2GXXU0M is 2G bit with spare 64M bit capacity.Its NAND cell provides the most costeffective solution for the solid state mass storage market.
K9K4G16Q0M Samsung - 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K4G16U0M Samsung - 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K5608U0M Samsung - K9K5608U0M 32M X 8Bit NAND Flash Memory ; Organization = 32Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Eol ; Comments = Dual
K9K5608U0M-YCB0 Samsung - K9K5608U0M 32M X 8Bit NAND Flash Memory ; Organization = 32Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Eol ; Comments = Dual
K9K5608U0M-YIB0 Samsung - K9K5608U0M 32M X 8Bit NAND Flash Memory ; Organization = 32Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Eol ; Comments = Dual
K9K8G08U0A Samsung - 1g X 8 Bit / 2g X 8 Bit Nand Flash Memory
K9K8G08U0A-P Samsung - 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9K8G08U0M Samsung - 1g X 8 Bit / 2g X 8 Bit Nand Flash Memory
K9K8G08U0M-Y,P Samsung - 4G x 8 Bit NAND Flash MemoryOffered in 1G x 8bit, the K9K8G08U0M isA 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5M:50ns) cycle time per Byte.
K9K8G08U1M Samsung - 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08U1M-I Samsung - 1G x 8 Bit NAND Flash MemoryOffered in 512Mx8bit, the K9F4G08U0M isA 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
K9NBG08U5M Samsung - 4G x 8 Bit NAND Flash MemoryOffered in 1G x 8bit, the K9K8G08U0M isA 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5M:50ns) cycle time per Byte.
K9NBG08U5M-P Samsung - 4G x 8 Bit NAND Flash MemoryOffered in 1G x 8bit, the K9K8G08U0M isA 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5M:50ns) cycle time per Byte.
K9Q1G08V0A Samsung - K9Q1G08V0A 128M X 8Bit SmartMedia(TM) Card ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = 0~55 ; Speed(ns) = 80 ; Package = 22PAD ; Production Status = Eol ; Comments = -
K9Q1G08V0A-SSB0 Samsung - K9Q1G08V0A 128M X 8Bit SmartMedia(TM) Card ; Organization = 128Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = 0~55 ; Speed(ns) = 80 ; Package = 22PAD ; Production Status = Eol ; Comments = -
K9S6408V0M Samsung - K9S6408V0M 8M X 8Bit SmartMedia(TM) Card ; Organization = 8Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = 0~55 ; Speed(ns) = 50 ; Package = 22PAD ; Production Status = Eol ; Comments = -
K9S6408V0M-SSB0 Samsung - K9S6408V0M 8M X 8Bit SmartMedia(TM) Card ; Organization = 8Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = 0~55 ; Speed(ns) = 50 ; Package = 22PAD ; Production Status = Eol ; Comments = -
K9T1G08U0M Samsung - 128m X 8 Bits Nand Flash Memory
K9W4G08U1M Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G08U1M-ECB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G08U1M-EIB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G08U1M-KCB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G08U1M-KIB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G08U1M-PCB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G08U1M-PIB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G08U1M-YCB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G08U1M-YIB0 Samsung - K9W4G08U1M 256M X 8 Bit NAND Flash Memory ; Organization = 512Mx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G16U1M Samsung - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G16U1M-ECB0 Samsung - K9W4G16U1M 128M X 16 Bit NAND Flash Memory ; Organization = 256Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G16U1M-EIB0 Samsung - K9W4G16U1M 128M X 16 Bit NAND Flash Memory ; Organization = 256Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G16U1M-PCB0 Samsung - K9W4G16U1M 128M X 16 Bit NAND Flash Memory ; Organization = 256Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W4G16U1M-PIB0 Samsung - K9W4G16U1M 128M X 16 Bit NAND Flash Memory ; Organization = 256Mx16 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Mass Production ; Comments = 0.12um,Dual Die(2G DDP*2)
K9W8G08U1M Samsung - 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M-PCB0 Samsung - K9W8G08U1M 1G X 8 Bit NAND Flash Memory ; Organization = 1Gx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um,Dual Die(4G DDP*2)
K9W8G08U1M-PIB0 Samsung - K9W8G08U1M 1G X 8 Bit NAND Flash Memory ; Organization = 1Gx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um,Dual Die(4G DDP*2)
K9W8G08U1M-YCB0 Samsung - K9W8G08U1M 1G X 8 Bit NAND Flash Memory ; Organization = 1Gx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um,Dual Die(4G DDP*2)
K9W8G08U1M-YIB0 Samsung - K9W8G08U1M 1G X 8 Bit NAND Flash Memory ; Organization = 1Gx8 ; Operating Voltage(V) = 2.7~3.6 ; Temperature = C,i ; Speed(ns) = 50 ; Package = 48TSOP1 ; Production Status = Engineering Sample ; Comments = 0.09um,Dual Die(4G DDP*2)
K9WAG08U1A Samsung - 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9WAG08U1A-I Samsung - 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9WAG08U1A-P Samsung - 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9WAG08U1M Samsung - 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9WAG08U1M-I Samsung - 4G x 8 Bit NAND Flash MemoryOffered in 1G x 8bit, the K9K8G08U0M isA 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms onA (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5M:50ns) cycle time per Byte.
KA2192B Samsung - KA2192B 4 in Put A/v Switch ; Function = - ; Features = Two Input Decoder,mode Selector,tv Polarity Switch,pulse Generator ; Package = 30SDIP ; Production Status = Eol
KA2206CN Samsung - S1A2206D01 4.6W Audio Power Amp ; Function = Power Amp ; Features = High Power Output(2.3W/channels),Good Ripple Rejection Due toA Built-in Ripple Filter ; Package = 12DIPH,16DIP ; Production Status = Eol
KA2224B Samsung - KA2224B Dual eq Amp With Alc ; Function = Dual eq Amp With Alc ; Features = Recording Amp Available,good Channel Separation(sep=-50dB Typ.),wide Operating Supply Voltage Range:Vcc=4V to 13V ; Package = 14DIP ; Production Status = Mass Production
KA22293Q Samsung - Monolithic Integrated Circuit For Music Center
KA22296 Samsung - S1A0296X01 Double Deck System For Radio Cassette ; Function = Type eq Amp ; Features = Dual Input 2-channel Playback Amplifier,recording / Playback,tape Dubbing Function,nab eq (60 Us) For High Speed Recording,allowing 3 (Line 1,Line 2 and AUX) Outside Inputs,mic,alc ; Package = 30SDIP ; Production Status = Eol
KA22682 Samsung - Linear Integrated Circuit One Chip Tv Mpx Demodulater
KA22686 Samsung - KA22686 Audio Processor With Iic ; Function = Audio Processor ; Features = Three Surround Modes : Music,movie,simulated,vocal Mix,l + R LPF Amp,volume & Balance Control,tone (bass/treble) Control,rear,woofer Volume Control ; Package = 32SDIP ; Production Status = Mass Production
KA22901 Samsung - KA22901 AM/FM Tuner + MPX ; Function = AM/FM Radio Chip ; Features = One Chip Tuner With Built-in FM Multiplex,no Adjustment For FM Detector and Vco,wide Operating Voltage Range: VCC = 1.8V - 7V ; Package = 24SDIP,24SOP ; Production Status = Mass Production
KA2418B/28 Samsung - KA2418B Speech Network With Dialer Interface ; Function = Ringer ; Features = Built-in Full Wave Bridge Diode Rectifier,parallel Operation of The 4 Devices,tone and Adjustable Switching Frequencies BY External Components ; Package = 8DIP ; Production Status = Eol
KA2425 Samsung - SPEECH NETWORK WITH DIALER INTERFACE
KA2425A Samsung - Speech Network With Dialer Interface
KA2425AD Samsung - SPEECH NETWORK WITH DIALER INTERFACE
KA2425B Samsung - SPEECH NETWORK WITH DIALER INTERFACE
KA334 Fairchild - Dual Power Operational Amplifier
KA3361 Samsung - THE KA3361B IS DESIGNED FOR USE IN FM DUAL CONVERSION COMMUNICATION.
KA3361B Samsung - THE KA3361B IS DESIGNED FOR USE IN FM DUAL CONVERSION COMMUNICATION.
KA3361BD Samsung - The Ka3361b Is Designed For Use In Fm Dual Conversion Communication.
KA3361C Samsung - KA3361C Low Voltage, Power Narrow-band FM if ; Function = Low Voltage,power Narrow Band FM if ; Features = Low Power Consumption,excellent Input Sensitivity,external Components Minimized,operating Voltage(2.5 to 7.0V) ; Package = 16DIP,16SOP ; Production Status = Mass Production
KA3361CD Samsung - KA3361C Low Voltage, Power Narrow-band FM if ; Function = Low Voltage,power Narrow Band FM if ; Features = Low Power Consumption,excellent Input Sensitivity,external Components Minimized,operating Voltage(2.5 to 7.0V) ; Package = 16DIP,16SOP ; Production Status = Mass Production
KA8501 Samsung - SPEECH NETWORK WITH DIALER INTERFACE
KA8501A Samsung - Speech Network With Dialer Interface
KA8503 Samsung - KA8503 Low Voltage Speech Network ; Function = Low Voltage Speech Network ; Features = Adjust Sending and Receiving Attenuation Length,mute Function,side Tone Balance Network Constitution,low Voltage Operation,ac Impedance Matching ; Package = 18DIP ; Production Status = Eol
KA8504 Samsung - KA8504 Speech Network With Dialer Interface ; Function = Speech Network With Dialer Interface ; Features = Low Line Current Operation,dtmf Signal Interface,mute Function,easy Gain Control ; Package = 16DIP ; Production Status = Eol
KA8513C Samsung - KA8513C FM if Receiver ; Function = Pocsag FM if Receiver ; Features = Operating Voltage Range(1.0~4.0V),low Battery Detection Circuit(1.05V),voltage Regulator(1.0V),mixer Operating Frequency(10 ~ 50MHz),high Transmitting Rate(1200bps),FSK Data Reception ; Package = 20SSOP ; Production Status = Mass Production
KA8515 Samsung - KA8515 FM if Receiver For Flex Pager ; Function = Flex FM if Receiver ; Features = Operating Voltage Range: 1 to 4V,High Transmission Rate: 6400bps,Built-in A/D Converter For 4 Level Fsk,built-in Rssi Function,low Battery Detection Circuit (Alarm Detection Voltage: 1.05A),Included Voltage Regulator: 1.0V) ; Package = 24SSOP ; Production Status = Mass Production
KA8532 Samsung - KA8532 Filterless Wideband FM if Detector ; Function = Filterless Wideband FM if Detector ; Features = For Cordless Telecphone,filterless & Coilless FM if Detector 76KHz Intermediate Frequency,if Band Pass Filter and Phase Shifter Included,dual Feedback if Detect System ; Package = 16SOP ; Production Status = End of Life
KA8601C Samsung - Speaker Phone With Speech Network
KAC3301QN KEC - White LED Driver IC The KAC3301 is low noise constant frequency charge pumpDC/DC converter specially designed to drive up to four whiteLEDs with constant current from Li-ion cell.Dual (1x/1.5x) Modes and low dropout voltage of LED drivermaximize efficiency for the white LED application over full Li-ionbattery input range. The LED current is set by the external resistor.PWM(Pulse Width Modulation) signal can be used to control LEDbrightness over wide frequency range. Various kinds of protectioncircuits prote
KAC-749S Неопределенные - 4-Channel power amplifier
KAD0228 Samsung - KAD0228 8-bit 30 MPS CMOS A/D Converter ; Function = - ; Features = - ; Package = - ; Production Status = -
KB8528 Samsung - KB8528 Enhanced 1-Chip CT0 RF ic ; Function = Enhanced(1Chip CT0 RF IC) ; Features = Operating Voltage(2 to 5.5V,Built-in Dual Conversion Receiver,pll and Compander,built-in Low Battery Detector,built-in Speaker Amp,programmable Speaker Amp Volume Control and Carrier Detector) ; Package = 48QFP ; Production Status = Mass Production
KB8653A Samsung - KB8653A ; Function = - ; Features = - ; Package = - ; Production Status = -
KB8822 Samsung - KB8822 Frequency Synthesizer ; Function = - ; Features = 2.0GHz,520MHz Integer-n Dual PLL Frequency Synthesizer ; Package = 20TSSOP,24QFN ; Production Status = Mass Production