NCV8508D2T50 ON Semiconductor - 5.0 V, 250 Ma Ldo With Watchdog and Reset
NCV8508D2T50G ON Semiconductor - 5.0 V, 250 mA LDO with Watchdog and RESET
NCV8508D2T50R4 ON Semiconductor - 5.0 V, 250 mA LDO with Watchdog and RESET
NCV8508DW50 ON Semiconductor - 5.0 V, 250 mA LDO with Watchdog and RESET
NCV8508DW50G ON Semiconductor - 5.0 V, 250 mA LDO with Watchdog and RESET
NCV8508DW50R2 ON Semiconductor - 5.0 V, 250 mA LDO with Watchdog and RESET
NCV8509 ON Semiconductor - Sequenced Linear Dual-Voltage Regulator
NCV8509PDW18 ON Semiconductor - Sequenced Linear Dual-Voltage Regulator
NCV8509PDW18R2 ON Semiconductor - Sequenced Linear Dual-Voltage Regulator
NCV8509PDW25 ON Semiconductor - Sequenced Linear Dual-Voltage Regulator
NCV8509PDW25R2 ON Semiconductor - Sequenced Linear Dual-Voltage Regulator
NCV8509PDW26 ON Semiconductor - Sequenced Linear Dual-Voltage Regulator
NCV8509PDW26R2 ON Semiconductor - Sequenced Linear Dual-voltage Regulator
NCV8518 ON Semiconductor - Low Dropout Linear Regulator with Watchdog, Wake Up, /RESET, and ENABLEThe NCV8518 device isA precision micropower voltage regulator. It hasA fixed output voltage of 5.0V and regulates within 2%. It is suitable for use in all automotive environments and contains all the required functions to controlA microprocessor. This device has low dropout voltage and low quiescent current. It includesA watchdog timer, adjustable reset, wake up and enable function. Also encompassed in this device are safety feature
NCV8518PDG ON Semiconductor - Low Dropout Linear Regulator with Watchdog, Wake Up, /RESET, and ENABLEThe NCV8518 device isA precision micropower voltage regulator. It hasA fixed output voltage of 5.0V and regulates within 2%. It is suitable for use in all automotive environments and contains all the required functions to controlA microprocessor. This device has low dropout voltage and low quiescent current. It includesA watchdog timer, adjustable reset, wake up and enable function. Also encompassed in this device are safety feature
NCV8518PDR2G ON Semiconductor - Low Dropout Linear Regulator with Watchdog, Wake Up, /RESET, and ENABLEThe NCV8518 device isA precision micropower voltage regulator. It hasA fixed output voltage of 5.0V and regulates within 2%. It is suitable for use in all automotive environments and contains all the required functions to controlA microprocessor. This device has low dropout voltage and low quiescent current. It includesA watchdog timer, adjustable reset, wake up and enable function. Also encompassed in this device are safety feature
NCV8518PWG ON Semiconductor - Low Dropout Linear Regulator with Watchdog, Wake Up, /RESET, and ENABLEThe NCV8518 device isA precision micropower voltage regulator. It hasA fixed output voltage of 5.0V and regulates within 2%. It is suitable for use in all automotive environments and contains all the required functions to controlA microprocessor. This device has low dropout voltage and low quiescent current. It includesA watchdog timer, adjustable reset, wake up and enable function. Also encompassed in this device are safety feature
NCV8518PWR2G ON Semiconductor - Low Dropout Linear Regulator with Watchdog, Wake Up, /RESET, and ENABLEThe NCV8518 device isA precision micropower voltage regulator. It hasA fixed output voltage of 5.0V and regulates within 2%. It is suitable for use in all automotive environments and contains all the required functions to controlA microprocessor. This device has low dropout voltage and low quiescent current. It includesA watchdog timer, adjustable reset, wake up and enable function. Also encompassed in this device are safety feature
NCV8800 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800HDW26 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800HDW26R2 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800HDW33 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800HDW33R2 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800HDW50 ON Semiconductor - Synchronous Buck Regulator With 1.0 Amp Switch
NCV8800HDW50R2 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800HDW75 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800HDW75R2 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800SDW26 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800SDW26R2 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800SDW33 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCV8800SDW33R2 ON Semiconductor - Synchronous Buck Regulator with 1.0 Amp Switch
NCX10S C&D - Isolated 10W Single Output DC/DC Converters
NCX10S24033 C&D - Isolated 10w Single Output Dc/dc Converters
NCX10S24033Y C&D - Isolated 10W Single Output DC/DC Converters
NCX10S24050 C&D - Isolated 10W Single Output DC/DC Converters
NCX10S24050Y C&D - Isolated 10W Single Output DC/DC Converters
NCX10S48033 C&D - Isolated 10W Single Output DC/DC Converters
NCX10S48033Y C&D - Isolated 10W Single Output DC/DC Converters
NCX10S48050 C&D - Isolated 10W Single Output DC/DC Converters
NCX10S48050Y C&D - Isolated 10W Single Output DC/DC Converters
NDB6030 Fairchild - N-channel Enhancement Mode Field Effect Transistor
NDB6030L Fairchild - Length/height 4.69 MM Width 10.54 MM Depth 15.49 MM Power Dissipation 75 W Transistor Polarity N Channel Current id Cont. 52A Voltage VGS TH Max. 3V (D2-Pak) Voltage VDS Max 30 V
NGB15N41CLT4 ON Semiconductor - Ignition IGBT 15 Amps, 410 Volts
NGB18N40CLBT4 ON Semiconductor - 18 Amps, 400 Volts N−channel D2pak
NGB8202N ON Semiconductor - 20 A, 400 V, N−channel D2pak
NGB8202NT4 ON Semiconductor - 20 A, 400 V, N−Channel D2PAK
NGB8204N ON Semiconductor - Ignition IGBT 18 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.• Ideal for Coil−on−Plug Applications• Gate−Emitter ESD Protection• Temperature Compensated Gate−Collector Voltage Clamp LimitsStress Applied to
NGB8204NT4 ON Semiconductor - Ignition IGBT 18 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.• Ideal for Coil−on−Plug Applications• Gate−Emitter ESD Protection• Temperature Compensated Gate−Collector Voltage Clamp LimitsStress Applied to
NGB8206N ON Semiconductor - Ignition IGBT 20 A, 350 V, N-channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) Featuresmonolithic Circuitry Integrating Esd and Over−Voltage Clampedprotection For Use in Inductive Coil Drivers Applications. Primary Usesinclude Ignition, Direct Fuel Injection, or Wherever High Voltage Andhigh Current Switching is Required.
NGB8206NT4 ON Semiconductor - Ignition IGBT 20 A, 350 V, N-channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) Featuresmonolithic Circuitry Integrating Esd and Over−Voltage Clampedprotection For Use in Inductive Coil Drivers Applications. Primary Usesinclude Ignition, Direct Fuel Injection, or Wherever High Voltage Andhigh Current Switching is Required.
NGD15N41CL ON Semiconductor - Ignition IGBT 15 Amps, 410 Volts
NGD15N41CLT4 ON Semiconductor - Ignition IGBT 15 Amps, 410 Volts
NGD18N40CLB ON Semiconductor - Ignition IGBT 18 Amps, 400 Volts
NGD18N40CLBT4 ON Semiconductor - Ignition IGBT 18 Amps, 400 Volts
NGD8205N ON Semiconductor - Ignition IGBT 20 A, 350 V, N-channel Dpak This Logic Level Insulated Gate Bipolar Transistor (IGBT) Featuresmonolithic Circuitry Integrating Esd and Over−Voltage Clampedprotection For Use in Inductive Coil Drivers Applications. Primary Usesinclude Ignition, Direct Fuel Injection, or Wherever High Voltage Andhigh Current Switching is Required.
NGD8205NT4 ON Semiconductor - Ignition IGBT 20 A, 350 V, N-channel Dpak This Logic Level Insulated Gate Bipolar Transistor (IGBT) Featuresmonolithic Circuitry Integrating Esd and Over−Voltage Clampedprotection For Use in Inductive Coil Drivers Applications. Primary Usesinclude Ignition, Direct Fuel Injection, or Wherever High Voltage Andhigh Current Switching is Required.
NGP15N41CL ON Semiconductor - Ignition IGBT 15 Amps, 410 Volts
NIF5002N ON Semiconductor - Self-Protected FET with Temperature and Current Limit
NIF5002ND ON Semiconductor - Self-Protected FET with Temperature and Current Limit
NIF5002NT1 ON Semiconductor - Self-protected Fet With Temperature and Current Limit
NIF5002NT3 ON Semiconductor - Self-Protected FET with Temperature and Current Limit
NIF5003N ON Semiconductor - Self-protected FET with Temperature and Current Limit, 42V clamp, 14 A, Single N-Channel, SOT-223HDPlus™ devices are an advanced Series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the av
NIF5003NT1 ON Semiconductor - Self-protected FET with Temperature and Current Limit, 42V clamp, 14 A, Single N-Channel, SOT-223HDPlus™ devices are an advanced Series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the av
NIF5003NT3 ON Semiconductor - Self-protected FET with Temperature and Current Limit, 42V clamp, 14 A, Single N-Channel, SOT-223HDPlus™ devices are an advanced Series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the av
NIF5003T1 ON Semiconductor - Smartdiscrete, 42V Clamped, Temp & Current Limits, Esd, SOT-223, Package: SOT-223 (TO-261), Pins=4
NIF5003T3 ON Semiconductor - SmartDiscrete(TM), 42V Clamped, Temp & Current Limit, Esd, Package: SOT-223 (TO-261), Pins=4
NIMD6302R2 ON Semiconductor - Hdplus Dual N-channe Self-protected Field Effect Transistors With 1:200 Current Mirror Fet
NIS3001 ON Semiconductor - Integrated Driver and Mosfet Power Chip For Synchronous Buck Controllers
NIS3001QPT1 ON Semiconductor - Integrated Driver and MOSFET Power Chip for Synchronous Buck Controllers
NIS5101 ON Semiconductor - SMART HotPlug IC/Inrush Limiter/Circuit Breaker
NIS5101B1T4 ON Semiconductor - PWR Micro Smart Hot Plug, Package: D2PAK, Pins=7
NIS5101B2T4 ON Semiconductor - Smart Hot Plug MOSFET, Package: D2PAK, Pins=7
NIS5101E1T1 ON Semiconductor - Smart Hotplug Ic/inrush Limiter/circuit Breaker
NIS5101E2T1 ON Semiconductor - SMART HotPlug IC/Inrush Limiter/Circuit Breaker
NIS5102 ON Semiconductor - High Side SMART HotPlug™ IC/Inrush Limiter/Circuit BreakerThe NIS5102 isA controller/FET IC that saves design time and reduces the number of components required forA complete hot swap application. It is designed for +12V applciations.This chip includesA time delay for sequencing applications. It hasA dual function OVLO pin that allows multiple units to be ganged together for simultaneous turn-on and shutdown, allowing units to be operated in parallel. It allows for user selectable, undervoltage and ove
NIS5102QP1HT1 ON Semiconductor - High Side SMART HotPlug™ IC/Inrush Limiter/Circuit BreakerThe NIS5102 isA controller/FET IC that saves design time and reduces the number of components required forA complete hot swap application. It is designed for +12V applciations.This chip includesA time delay for sequencing applications. It hasA dual function OVLO pin that allows multiple units to be ganged together for simultaneous turn-on and shutdown, allowing units to be operated in parallel. It allows for user selectable, undervoltage and ove
NIS5102QP1HT1G ON Semiconductor - High Side SMART HotPlug™ IC/Inrush Limiter/Circuit BreakerThe NIS5102 isA controller/FET IC that saves design time and reduces the number of components required forA complete hot swap application. It is designed for +12V applciations.This chip includesA time delay for sequencing applications. It hasA dual function OVLO pin that allows multiple units to be ganged together for simultaneous turn-on and shutdown, allowing units to be operated in parallel. It allows for user selectable, undervoltage and ove
NIS5102QP2HT1 ON Semiconductor - High Side SMART HotPlug™ IC/Inrush Limiter/Circuit BreakerThe NIS5102 isA controller/FET IC that saves design time and reduces the number of components required forA complete hot swap application. It is designed for +12V applciations.This chip includesA time delay for sequencing applications. It hasA dual function OVLO pin that allows multiple units to be ganged together for simultaneous turn-on and shutdown, allowing units to be operated in parallel. It allows for user selectable, undervoltage and ove
NIS5102QP2HT1G ON Semiconductor - High Side SMART HotPlug™ IC/Inrush Limiter/Circuit BreakerThe NIS5102 isA controller/FET IC that saves design time and reduces the number of components required forA complete hot swap application. It is designed for +12V applciations.This chip includesA time delay for sequencing applications. It hasA dual function OVLO pin that allows multiple units to be ganged together for simultaneous turn-on and shutdown, allowing units to be operated in parallel. It allows for user selectable, undervoltage and ove
NIS5112 ON Semiconductor - Electronic FuseThe NIS5112 is an integrated switch utilizingA high side N-channel FET driven by an internal charge pump. This switch featuresA SENSEFET™ which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.It is designed to operate in 12V systems and includesA robust thermal protection circuit
NIS5112D1R2G ON Semiconductor - Electronic FuseThe NIS5112 is an integrated switch utilizingA high side N-channel FET driven by an internal charge pump. This switch featuresA SENSEFET™ which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.It is designed to operate in 12V systems and includesA robust thermal protection circuit
NIS6111 ON Semiconductor - Better Efficiency Rectifier System
NIS6111QPT1 ON Semiconductor - Better Efficiency Rectifier System
NIS6201 ON Semiconductor - Floating, Regulated Charge Pump
NIS6201DR2G ON Semiconductor - Floating, Regulated Charge PumpThe NIS6201 Charge Pump is designed to provide economical, low level power to circuits above ground level potential, such as the drive for ORing Diodes. It isA very cost-effective replacement forA small, isolated, switching power supply.It contains an internal linear regulator, andA versatile charge pump to allow bias voltage supplies to be transferred fromA ground referenced source toA higher potential. The design of the charge pump allows for any isolation voltage requi