NGB8204NT4 (ON Semiconductor) - Ignition IGBT 18 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.• Ideal for Coil−on−Plug Applications• Gate−Emitter ESD Protection• Temperature Compensated Gate−Collector Voltage Clamp LimitsStress Applied to, IGBTs (Insulated Gate Bipolar Transistors)

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NGB8204NT4 (ON Semiconductor)

Electronic component documentation (datasheet) «NGB8204NT4» (IGBTs (Insulated Gate Bipolar Transistors)), manufacturer ON Semiconductor. Download datasheet file:

Datasheet NGB8204NT4 manufacturer ON Semiconductor

Partname	NGB8204NT4
Description	Ignition IGBT 18 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.• Ideal for Coil−on−Plug Applications• Gate−Emitter ESD Protection• Temperature Compensated Gate−Collector Voltage Clamp LimitsStress Applied to
Functional	IGBTs (Insulated Gate Bipolar Transistors)
Manufacturer	ON Semiconductor
Site	www.onsemi.com

Size	Pages: 8, 115.51Kb
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NGB8204N, NGB8204NT4

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