BLF4G10LS-120 (Philips)
Electronic component documentation (datasheet) «BLF4G10LS-120» (LDMOS), manufacturer Philips. Download datasheet file:
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| Partname | BLF4G10LS-120 |
| Description | UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 920 MHz and 960 MHz,A supply voltage of 28V and an IDq of 650 mA Load power = 48 W (AV) Gain = 19 dB (typ) Efficiency = 40 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -72 dBc (typ) EVMrms = 1.5 pct (t |
| Functional | LDMOS | | Manufacturer | Philips Semiconductors |  |
| Site | www.semiconductors.philips.com |
| | | Size | Pages: 13, 105.08Kb |
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