K4S563233F-F(H)E/N/G/C/L/F60 (Samsung)
Electronic component documentation (datasheet) «K4S563233F-F(H)E/N/G/C/L/F60» (256 Mb), manufacturer Samsung. Download datasheet file:
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Partname | K4S563233F-F(H)E/N/G/C/L/F60 |
Description | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and |
Functional | 256 Mb | Manufacturer | Samsung semiconductor | |
Site | www.samsung.com |
| Size | Pages: 12, 140.87Kb |
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