|
IRG4BC10S |
Insulated Gate Bipolar Transistor Standard Speed IGBT(vces=600v, Vce(on)typ.1.10v, @vge=15v, Ic=2.0a) |
157.1Kb, 8 pg. |
IRG4BC10SD-L |
Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode(vces=600v, Vce(on)typ.=1.10v, @vge=15v, Ic=2.0a) |
217.9Kb, 12 pg. |
IRG4BC10SD-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) |
217.9Kb, 12 pg. |
IRG4BC10SD |
600V DC-1 KHZ (Standard) Copack IGBT inA TO-220AB Package |
210.74Kb, 10 pg. |