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Search
Search result: IRG4BC10SD
Rows: 3
Manufacturer
Part name
Description
File
IRG4BC10SD-L
Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode(vces=600v, Vce(on)typ.=1.10v, @vge=15v, Ic=2.0a)
217.9Kb, 12 pg.
IRG4BC10SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
217.9Kb, 12 pg.
IRG4BC10SD
600V DC-1 KHZ (Standard) Copack IGBT inA TO-220AB Package
210.74Kb, 10 pg.
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