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Search result: IRG4BC20MD
Rows: 2
Manufacturer
Part name
Description
File
IRG4BC20MD
Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode(vces=600v, Vce(on)typ.=1.85v, @vge=15v, Ic=11a)
253.04Kb, 10 pg.
IRG4BC20MD-S
Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode(vces=600v, Vce(on)typ.=1.85v, @vge=15v, Ic=11a)
202.82Kb, 11 pg.
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