SDM-08060-B1F - The SDM-08060-B1F 60W powermodule is an impedance matched,single-stage, push-pull Class ABamplifier module suitable for use as apower amplifier driver or output stage.It isA drop-in, no-tune solution for highpower applications requiring highefficiency, excellent linearity, andunit-to-unit repeatability.
SDM-08120 - The SDM-08120 120W power module is animpedance matched, single-stage, push-pullClass AB amplifier module suitable for use as apower amplifier driver or output stage. It is adrop-in, no-tune solution for high powerapplications requiring high efficiency, excellentlinearity, and unit-to-unit repeatability.
SDM-09060-B1F - The SDM-09060-B1F 60W power module is animpedance matched, single-stage, push-pullClass AB amplifier module suitable for use as apower amplifier driver or output stage. It is adrop-in, no-tune solution for high powerapplications requiring high efficiency, excellentlinearity, and unit-to-unit repeatability.
SDM-09120 - The SDM-09120 120W power module is animpedance matched, single-stage, push-pullClass AB amplifier module suitable for use as apower amplifier driver or output stage. It is adrop-in, no-tune solution for high powerapplications requiring high efficiency, excellentlinearity, and unit-to-unit repeatability.
SGL-0363 - Sirenza Microdevices’ SGL-0363Z isA low power, low noise amplifier. It isdesigned for 2.7 to 3.3V battery operation. The matching networks areimplemented externally which allows for optimum narrow-band performancewith 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFICuses the latest Silicon Germanium HBT process.
SGL-0622 - The SGL-0622 isA low power, high gain, fully matched LNA designed for0.1 - 4GHz operation. This LNA is designed for low power, 2.7 to 3.6Vbattery operation. This amplifer is fully matched and requires only 4-5external components to achieve 28.5 dB gain at 1.575 GHz andA noisefigure of 1.5dB. This RFIC is fabricated using Silicon Germanium technology.
SLD-2083CZ - 12 Watt Discrete LDMOS FET in Ceramic Package
SLD-3091F - The SLD-3091FZ isA 30 Watt high performanceLDMOS transistor designed for operation to2200MHz. It is an excellent solution forapplications requiring high linearity and efficiencyatA low cost. The SLD-3091FZ is typically used inpower amplifiers, repeaters, and radio amplifierapplications. The power transistor is fabricatedusing Sirenza’s high performance XeMOS IITMprocess.
SLD-3091FZ - 30 Watt Discrete LDMOS FET in Ceramic Flanged Package
SPF-3143 - Sirenza Microdevices’ SPF-3143 isA high performance0.5μm pHEMT Gallium Arsenide FET. This 600μm device isideally biased at 3V,20mA for lowest noise performance andbattery powered requirements. At 5V,40mA the device candeliver OIP3 of 31dBm. It provides ideal performance as adriver stage in many commercial and industrial LNAapplications.
SRF-1016 - 65 - 300 MHz Silicon Germanium IF Receiver
SRF-1016Z - 65 - 300 MHz Silicon Germanium IF Receiver
SRQ-2116 - The SRQ-2116Z isA high-linearity, silicon germanium directdemodulator designed for direct conversion and low-IF basestationreceivers. This device features high second- andthird-order intermodulation suppression, high LO-RF isolationand excellent quadrature accuracy.
SRQ-2116Z - 700-3800 MHz Direct Quadrature Demodulator
STM-2116 - 1800-2100 MHZ High Linearity Active Transmit Mixer
STQ-2016 - 800-2500 MHZ Direct Quadrature Modulator
SXA-389B - 400-2500 MHz Ёщ W Medium Power GaAs HBT Amplifier with Active Bias
SXA-389BZ - 400-2500 MHz Ёщ W Medium Power GaAs HBT Amplifier with Active Bias
SZA-6044 - 5.1- 5.9 GHz 1/4 Watt Power Amplifier with Active Bias
SZM-2066 - Sirenza Microdevices’ SZM-2066Z isA high linearity class ABHeterojunction Bipolar Transistor (HBT) amplifier housed in alow-cost surface-mountable plastic Q-FlexN multi-chip modulepackage. This HBT amplifier is made with InGaP on GaAsdevice technology and fabricated with MOCVD for an idealcombination of low cost and high reliability.
SZM-3066 - Sirenza Microdevices’ SZM-3066Z isA high linearity class ABHeterojunction Bipolar Transistor (HBT) amplifier housed in alow-cost surface-mountable plastic Q-FlexN multi-chip modulepackage. This HBT amplifier is made with InGaP on GaAsdevice technology and fabricated with MOCVD for an idealcombination of low cost and high reliability.
SZM-3066Z - Sirenza Microdevices’ SZM-3066Z isA high linearity class ABHeterojunction Bipolar Transistor (HBT) amplifier housed in alow-cost surface-mountable plastic Q-FlexN multi-chip modulepackage. This HBT amplifier is made with InGaP on GaAsdevice technology and fabricated with MOCVD for an idealcombination of low cost and high reliability.
SZP-2026 - Sirenza Microdevices’ SZP-2026Z isA high linearity singlestage class AB Heterojunction Bipolar Transistor (HBT)amplifier housed inA proprietary surface-mountable plasticencapsulated package. This HBT amplifier is made withInGaP on GaAs device technology and fabricated withMOCVD for an ideal combination of low cost and high reliability.
SZP-3026 - Sirenza Microdevices’ SZP-3026Z isA high linearity singlestage class AB Heterojunction Bipolar Transistor (HBT)amplifier housed inA proprietary surface-mountable plasticencapsulated package. This HBT amplifier is made withInGaP on GaAs device technology and fabricated withMOCVD for an ideal combination of low cost and high reliability.
XD010-42S-D4F - 869-894 MHz ClassA 8 W Power Amplifier Module
XD010-51S - The XD010-51S-D4F 12.5W power module isa 2-stage Class A/AB amplifier module for useasA driver stage in many 900 MHz applications.This unit operates fromA positive singlevoltage and has internal temperature compensationof the bias voltage to ensure stable performanceover the full temperature range.
XD010-51S-D4F - 902-928 MHz Class A/AB 15W Power Amplifier Module
