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Electronic components list Toshiba, page 13



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    TC55VEM316AXBN - Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  2. TC55VEM316AXBN40 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  3. TC55VEM316AXBN55 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  4. TC55VEM416AXBN55 - 1,048,576-word By 16-bit Full Cmos Static Ram
  5. TC55VL818FF - Organization = 512Kx18 ; Speed = 83MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Flowthrough Burst ; Package = 100 LQFP
  6. TC55VL818FFI - Organization = 512Kx18 ; Speed = 83MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Flowthrough Burst, I-temp ; Package = 100 LQFP
  7. TC55VL836FF - Organization = 256Kx36 ; Speed = 83MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Flowthrough Burst ; Package = 100 LQFP
  8. TC55VL836FFI - Organization = 256Kx36 ; Speed = 83MHz ; VDD(V) = 3.3 ; Functionality = Ntram, Flowthrough Burst, I-temp ; Package = 100 LQFP
  9. TC55VZM208AFTI - Density = 4Mb ; Organization = 512Kx8 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments = Industrial Temp
  10. TC55VZM208AFTN - Density = 4Mb ; Organization = 512Kx8 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments =
  11. TC55VZM208AJJI - Density = 4Mb ; Organization = 512Kx8 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments = Industrial Temp
  12. TC55VZM208AJJN - Density = 4Mb ; Organization = 512Kx8 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments =
  13. TC55VZM216A - 262,144-WORD BY 16-BIT CMOS STATIC RAM
  14. TC55VZM216AFTI - Density = 4Mb ; Organization = 256Kx16 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments = Industrial Temp
  15. TC55VZM216AFTN - Density = 4Mb ; Organization = 256Kx16 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments =
  16. TC55VZM216AFTN08 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
  17. TC55VZM216AFTN10 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
  18. TC55VZM216AFTN-12 - 262,144-word By 16-bit Cmos Static Ram
  19. TC55VZM216AJJI - Density = 4Mb ; Organization = 256Kx16 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments = Industrial Temp
  20. TC55VZM216AJJN - Density = 4Mb ; Organization = 256Kx16 ; Speed (ns) = 8,10,12 ; Package = Soj/tsop ; Voltage (V) = 3.3 ; Comments =
  21. TC55VZM216AJJN08 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
  22. TC55VZM216AJJN10 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
  23. TC55VZM216AJJN12 - 262,144-WORD BY 16-BIT CMOS STATIC RAM
  24. TC55W1600FT - 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
  25. TC55W1600FT-55 - 1,048,576-word By 16-bit/2,097,152-word By 8-bit Full Cmos Static Ram
  26. TC55W1600FT-70 - 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
  27. TC55W1600XB - Organization = 2Mx8/1Mx16 ; VDD(V) = 2.5 ; Package = 48pin Bga ; Functionlity = Full CMOS ; Speed(ns) = 70, 85 ; Comment = Recommend Shrink Parts
  28. TC55W800FT - 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
  29. TC55W800FT-55 - 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
  30. TC55W800FT-70 - 524,288-word By 16-bit/1,048,576-word By 8-bit Full Cmos Static Ram
  31. TC55W800XB - Organization = 1Mx8/512kx16 ; VDD(V) = 2.5 ; Package = 48pin Bga ; Functionlity = Full CMOS ; Speed(ns) = 55, 70 ; Comment = Recommend Shrink Parts
  32. TC55W800XB7 - 524,288-word By 16-bit Full Cmos Static Ram
  33. TC55W800XB8 - 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
  34. TC55WD1618FF - Organization = 1Mx18 ; Speed = 133,150,167MHz ; VDD(V) = 2.5 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
  35. TC55WD1636FF - Organization = 512kx36 ; Speed = 133,150,167MHz ; VDD(V) = 2.5 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
  36. TC55WD818FF - Organization = 512Kx18 ; Speed = 133,150,167MHz ; VDD(V) = 2.5 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
  37. TC55WD836FF - Organization = 256Kx36 ; Speed = 133,150,167MHz ; VDD(V) = 2.5 ; Functionality = Ntram, Pipeline Burst ; Package = 100 LQFP
  38. TC55YK1618XB - Synchronous 16m CMOS SRAM 1m X 16
  39. TC55YK1636XB - Synchronous 16m CMOS SRAM 1m X 16
  40. TC581282A - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
  41. TC581282AXB - 128-mbit (16m X 8 Bits) Cmos Nand E2prom
  42. TC58128AFT - Org. = 16M X 8 ; Status = Die Transition ; Replacement = TC58DVM72A1FT00 ; Package = Tsop-i 48 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  43. TC58128AFTI - Org. = 16M X 8 ; Status = Die Transition ; Replacement = TC58DVM72A1FTI0 ; Package = Tsop-i 48 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  44. TC58128DC - Smartmedia Density = 16 Megabyte (128 Megabit) ; Organization = 16M X 8 ; Status = End of Life ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  45. TC58128FT -
  46. TC58128FTI -
  47. TC5816BDC - 16 Mbit (2m X 8 Bits) Cmos Nand Flash E2prom
  48. TC5816BFT - 16 Mbit (2m X 8bits) Cmos Nand Flash E2prom
  49. TC582562AXB - Org. = 32M X 8 ; Status = Die Transition ; Replacement = TC58DVM82A1XBJ1 ; Package = TFBGA-56 ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  50. TC58256AFT - 256-mbit (32m X 8 Bits) Cmos Nand E2prom
  51. TC58256AFTI - Org. = 32M X 8 ; Status = Die Transition ; Replacement = TC58DVM82A1FTI0 ; Package = Tsop-i 48 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  52. TC58256DC - Smartmedia Density = 32 Megabyte (256 Megabit) ; Organization = 32M X 8 ; Status = End of Life ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  53. TC58256FT -
  54. TC58256FT/DC -
  55. TC58256FTI -
  56. TC5832DC - 32 Mbit (4m X 8bit) Cmos Nand E2prom
  57. TC5832FT - 32 Mbit (4m X 8 Bits) Cmos Nand E2prom
  58. TC58512FT - Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  59. TC58512FTI - Org. = 64M X 8 ; Status = Die Transition ; Replacement = TC58DVM92A1FTI0 ; Package = Tsop-i 48 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  60. TC58A040 - 4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM
  61. TC58A040F - 4 Mbit (4m X 1bits) Cmos Audio Nand E2prom
  62. TC58C128A - Density (MBytes) = 16 MB
  63. TC58C256A - Density (MBytes) = 32 MB
  64. TC58DAM72A1FT00 - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  65. TC58DAM72F1FT00 - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  66. TC58DAM82A1FT00 - 128-mbit (16m X 8 Bits/8m X 16bits) Cmos Nand E2prom
  67. TC58DAM82F1FT00 - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  68. TC58DVG02A1FT00 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  69. TC58DVG02A1FTI0 - Org. = 128M X 8 ; Status = Available ; Replacement = ; Package = Tsop-i 48 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  70. TC58DVM72A1F - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  71. TC58DVM72A1FT00 - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  72. TC58DVM72A1FTI0 - Org. = 16M X 8 ; Status = Available ; Replacement = ; Package = Tsop-i 48 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  73. TC58DVM72F1FT00 - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  74. TC58DVM82A1FT00 - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  75. TC58DVM82A1FTI0 - Org. = 32M X 8 ; Status = Available ; Replacement = ; Package = Tsop-i 48 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  76. TC58DVM82A1XBJ1 - Org. = 32M X 8 ; Status = Contact Marketing ; Replacement = ; Package = TFBGA-56 ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 16K Bytes
  77. TC58DVM82F1FT00 - 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
  78. TC58DVM92A1FT00 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  79. TC58DVM92A1FTI0 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  80. TC58F1001F-15 - 131,072 WORD x 8 BIT CMOS FLASH E2PROM
  81. TC58F1001F-20 - 131,072 Word X 8 Bit Cmos Flash E2prom
  82. TC58F1001P - 131,072 WORD x 8 BIT CMOS FLASH E2PROM
  83. TC58F1001P-15 - 131,072 WORD x 8 BIT CMOS FLASH E2PROM
  84. TC58F1001P-20 - 131,072 WORD x 8 BIT CMOS FLASH E2PROM
  85. TC58FV321 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos 32-mbit (4m X 8 Bits / 2m X 16 Bits) Cmos Flash Memory
  86. TC58FVB004FT-10 - 4m (512k X 8) Bit Cmos Flash Memory
  87. TC58FVB004FT-12 - 4M (512K x 8) BIT CMOS FLASH MEMORY
  88. TC58FVB004FT-85 - 4M (512K x 8) BIT CMOS FLASH MEMORY
  89. TC58FVB160 -
  90. TC58FVB160-10 -
  91. TC58FVB160-12 -
  92. TC58FVB160-85 -
  93. TC58FVB160A - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  94. TC58FVB160AF - 16-mbit (2m X 8 Bits / 1m X 16 Bits) Cmos Flash Memory
  95. TC58FVB160AFT - 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
  96. TC58FVB160AFT - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  97. TC58FVB160AFT-10 - 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
  98. TC58FVB160AFT-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  99. TC58FVB160AFT-70 - 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
  100. TC58FVB160AFT-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  101. TC58FVB160AFT/AXB -
  102. TC58FVB160AXB - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  103. TC58FVB160AXB-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  104. TC58FVB160AXB-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  105. TC58FVB160FT - 16 MBIT CMOS FLASH MEMORY
  106. TC58FVB160FT-10 - 16 MBIT CMOS FLASH MEMORY
  107. TC58FVB160FT-12 - 16 MBIT CMOS FLASH MEMORY
  108. TC58FVB160FT-85 - 16 Mbit Cmos Flash Memory
  109. TC58FVB321 - 32-mbit (4m x 8 Bits / 2m x 16 Bits) Cmos Flash Memory
  110. TC58FVB321FT - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  111. TC58FVB321FT-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  112. TC58FVB321FT-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  113. TC58FVB321FT/XB -
  114. TC58FVB321FTXB-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  115. TC58FVB321FTXB-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  116. TC58FVB321XB - Organization = 4Mx8 / 2Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 70ns/100ns ; VCC = 2.7-3.6 ; Read Icc Max (mA) = 30 ; Standby Icc Max (uA) = 10 ; Boot Block = Bottom ; Comment = Recommend Shrink Product
  117. TC58FVB321XB-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  118. TC58FVB321XB-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  119. TC58FVB400 - 4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
  120. TC58FVB641 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  121. TC58FVB641FT - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  122. TC58FVB641FT-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  123. TC58FVB641FT-10 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  124. TC58FVB641FT-70 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  125. TC58FVB641FT-70 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  126. TC58FVB641FT/XB -
  127. TC58FVB641FTXB-10 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  128. TC58FVB641FTXB-70 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  129. TC58FVB641XB - Organization = 8Mx8 / 4Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 70ns/100ns ; VCC = 2.7-3.6 ; Read Icc Max (mA) = 30 ; Standby Icc Max (uA) = 10 ; Boot Block = Bottom ; Comment = Recommend Shrink Product
  130. TC58FVB641XB-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  131. TC58FVB641XB-10 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  132. TC58FVB641XB-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  133. TC58FVB641XB-70 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  134. TC58FVB800F - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  135. TC58FVM5B2A - Organization = 4Mx8 / 2Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 65ns/25ns Page ; VCC = 2.3-3.6 ; Read Icc Max (mA) = 55 ; Standby Icc Max (uA) = 10 ; Boot Block = Bottom ; Comment =
  136. TC58FVM5B2AFT65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  137. TC58FVM5B2AXB65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  138. TC58FVM5B3AFT65 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  139. TC58FVM5B3AXB65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  140. TC58FVM5T2A - Organization = 4Mx8 / 2Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 65ns/25ns Page ; VCC = 2.3-3.6V ; Read Icc Max (mA) = 55 ; Standby Icc Max (uA) = 10 ; Boot Block = Top ; Comment =
  141. TC58FVM5T2AFT65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  142. TC58FVM5T2AXB65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  143. TC58FVM5T3AFT65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  144. TC58FVM5T3AXB65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  145. TC58FVM62A - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  146. TC58FVM6B2A - Organization = 8Mx8 / 4Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 65ns/25ns Page ; VCC = 2.7-3.6 ; Read Icc Max (mA) = 55 ; Standby Icc Max (uA) = 10 ; Boot Block = Bottom ; Comment =
  147. TC58FVM6B2AFT65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  148. TC58FVM6B2AXB65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  149. TC58FVM6T2A - Organization = 8Mx8 / 4Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 65ns/25ns Page ; VCC = 2.7-3.6 ; Read Icc Max (mA) = 55 ; Standby Icc Max (uA) = 10 ; Boot Block = Top ; Comment =
  150. TC58FVM6T2AFT65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  151. TC58FVM6T2AXB65 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  152. TC58FVM7B2 - 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
  153. TC58FVM7B2A - Organization = 16Mx8/8Mx16 ; Pkg-pins = TSOP-I-48 ; Speed = 65ns/25ns Page ; VCC = 2.3-3.6 ; Read Icc Max (mA) = 55 ; Standby Icc Max (uA) = 10 ; Boot Block = Bottom ; Comment =
  154. TC58FVM7B2AFT - 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
  155. TC58FVM7B2AFT80 - 128-mbit (16m X 8 Bits / 8m X 16 Bits) Cmos Flash Memory
  156. TC58FVM7T2A - Organization = 16Mx8/8Mx16 ; Pkg-pins = TSOP-I-48 ; Speed = 65ns/25ns Page ; VCC = 2.3-3.6 ; Read Icc Max (mA) = 55 ; Standby Icc Max (uA) = 10 ; Boot Block = Top ; Comment =
  157. TC58FVM7T2AFT - 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
  158. TC58FVM7T2AFT65 - 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
  159. TC58FVT004 - 4M (512K x 8) BIT CMOS FLASH MEMORY
  160. TC58FVT004-10 - 4M (512K x 8) BIT CMOS FLASH MEMORY
  161. TC58FVT004-12 - 4M (512K x 8) BIT CMOS FLASH MEMORY
  162. TC58FVT004-85 - 4M (512K x 8) BIT CMOS FLASH MEMORY
  163. TC58FVT016 - 16mb CMOS Flash Memory: 2mx8
  164. TC58FVT016-10 - 16mb CMOS Flash Memory: 2mx8
  165. TC58FVT016-12 - 16mb CMOS Flash Memory: 2mx8
  166. TC58FVT016-85 - 16mb CMOS Flash Memory: 2mx8
  167. TC58FVT160 - 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
  168. TC58FVT160 - 16 MBIT CMOS FLASH MEMORY
  169. TC58FVT160-10 - 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
  170. TC58FVT160-12 - 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
  171. TC58FVT160-85 - 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
  172. TC58FVT160A - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  173. TC58FVT160AFT - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  174. TC58FVT160AFT-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  175. TC58FVT160AFT-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  176. TC58FVT160AFT/AXB -
  177. TC58FVT160AXB - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  178. TC58FVT160AXB-10 - Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  179. TC58FVT160AXB-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  180. TC58FVT160FT-10 - 16 MBIT CMOS FLASH MEMORY
  181. TC58FVT160FT-12 - 16 MBIT CMOS FLASH MEMORY
  182. TC58FVT160FT-85 - 16 MBIT CMOS FLASH MEMORY
  183. TC58FVT321 - 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
  184. TC58FVT321-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  185. TC58FVT321-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  186. TC58FVT321-70 - 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
  187. TC58FVT321FT - Organization = 4Mx8 / 2Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 70ns/100ns ; VCC = 2.7-3.6 ; Read Icc Max (mA) = 30 ; Standby Icc Max (uA) = 10 ; Boot Block = Top ; Comment = Recommend Shrink Product
  188. TC58FVT321FT-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  189. TC58FVT321FT-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  190. TC58FVT321XB - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  191. TC58FVT321XB-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  192. TC58FVT321XB-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
  193. TC58FVT400 - 4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
  194. TC58FVT400-10 - CMOS Flash Memory: 512kx8
  195. TC58FVT400-12 - CMOS Flash Memory: 512kx8
  196. TC58FVT400-85 - CMOS Flash Memory: 512kx8
  197. TC58FVT400FT - 4-mbit (512k * 8 Bits / 256k * 16bits)cmos Flash Memory
  198. TC58FVT400FT-10 - 4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
  199. TC58FVT641 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  200. TC58FVT641-10 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  201. TC58FVT641-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  202. TC58FVT641FT - Organization = 8Mx8 / 4Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 70ns/100ns ; VCC = 2.7-3.6 ; Read Icc Max (mA) = 30 ; Standby Icc Max (uA) = 10 ; Boot Block = Top ; Comment = Recommend Shrink Product
  203. TC58FVT641FT-70 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  204. TC58FVT641FT/XB -
  205. TC58FVT641XB - Organization = 8Mx8 / 4Mx16 ; Pkg-pins = TSOP-I-48,TFBGA ; Speed = 70ns/100ns ; VCC = 2.7-3.6 ; Read Icc Max (mA) = 30 ; Standby Icc Max (uA) = 10 ; Boot Block = Top ; Comment = Recommend Shrink Product
  206. TC58FVT641XB-10 - 64-mbit (8m x 8 Bits / 4m x 16 Bits) Cmos Flash Memory
  207. TC58FVT641XB-70 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
  208. TC58FVT800 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  209. TC58FVT800-10 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  210. TC58FVT800-12 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  211. TC58FVT800-85 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  212. TC58FVT800F-10 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  213. TC58FVT800F-12 - 8 Mbit (1m X 8 Bits / 512k X 16 Bits) Cmos Flash Memory
  214. TC58FVT800F-85 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  215. TC58FVT800FT-10 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  216. TC58FVT800FT-12 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  217. TC58FVT800FT-85 - 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
  218. TC58FVXB-10 - 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
  219. TC58FVXB-70 - 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
  220. TC58NS100DC - Smartmedia Density = 128 Megabyte (1 Gigabit) ; Organization = 128M X 8 ; Status = ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  221. TC58NS128ADC - Smartmedia Density = 16 Megabyte (128 Megabit) ; Organization = 16M X 8 ; Status = Use TC58NS128BDC ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  222. TC58NS128BDC - Smartmedia Density = 16 Megabyte (128 Megabit) ; Organization = 16M X 8 ; Status = ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  223. TC58NS128DC - Smartmedia Density = 16 Megabyte (128 Megabit) ; Organization = 16M X 8 ; Status = End of Life ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  224. TC58NS256ADC - Smartmedia Density = 32 Megabyte (256 Megabit) ; Organization = 32M X 8 ; Status = Use TC58NS256BDC ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  225. TC58NS256BDC - Smartmedia Density = 32 Megabyte (256 Megabit) ; Organization = 32M X 8 ; Status = ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  226. TC58NS256DC - Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos 256-mbit (32m Ч 8 Bits) Cmos Nand E2prom (32m Byte Smartmediatm)
  227. TC58NS512ADC - Smartmedia Density = 64 Megabyte (512 Megabit) ; Organization = 64M X 8 ; Status = ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  228. TC58NS512DC - Smartmedia Density = 64 Megabyte (512 Megabit) ; Organization = 64M X 8 ; Status = Use TC58NS512ADC ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  229. TC58NVG0S3AFT05 - 1 GBIT (128M Ўї 8 BITS) CMOS NAND EEPROM
  230. TC58NVG1S3BFT00 - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  231. TC58NVG1S8BFT00 - Tentative Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos
  232. TC58V16BDC - Smartmedia Density = 2 Megabyte (16 Megabit) ; Organization = 2MB X 8 ; Status = End of Life ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  233. TC58V16BFT - 16mb CMOS Flash EePROM: 2mx8
  234. TC58V16DC - 16mb CMOS EePROM: 2mx8
  235. TC58V32ADC - Smartmedia Density = 4 Megabyte (32 Megabit) ; Organization = 4MB X 8 ; Status = End of Life ; Package = 22 Pin ; Voltage = 3.0V to 3.6V
  236. TC58V32AFT - 32 Mbit Cmos Nand E2prom
  237. TC58V64ADC - 64-mbit (8m X 8bits) Cmos Nand E Prom (8m Byte Smartmedia)
  238. TC58V64AFT -
  239. TC58V64AFTI -
  240. TC58V64BDC - 64-mbit (8m  8 Bits) Cmos Nand E2prom (8m Byte Smartmediatm)
  241. TC58V64BFT - Org. = 8M X 8 ; Status = Available ; Replacement = ; Package = Tsop-ii 44 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 8K Bytes
  242. TC58V64BFTI - Org. = 8M X 8 ; Status = Available ; Replacement = ; Package = Tsop-ii 44 Pins ; Voltage = 2.7V to 3.6V ; Page Size = 528 Bytes ; Block Size = 8K Bytes
  243. TC58V64FT - 64mb CMOS EePROM: 8mx8
  244. TC59LM806BFT - Type = Fcram ; Density (Mb) = 256 ; Geometry = 32M X 8 ; Refresh = ; Features = SSTL2 Half, TSOPII-66pin
  245. TC59LM806CFT - Density(Mb) = 256 ; Geometry = 32M X 8 ; Package = Tsopii 66pin ; Features = SSTL2 Half ; Date = 2002-08-19 ; Additional Information = More Info
  246. TC59LM806CFT-50 - 4,194,304 / 8,388,608-words X 4 Banks X 16 / 8-bits Network Fcram
  247. TC59LM806CFT-55 - 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
  248. TC59LM806CFT-60 - 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
  249. TC59LM814BFT - Type = Fcram ; Density (Mb) = 256 ; Geometry = 16M X 16 ; Refresh = ; Features = SSTL2 Half, TSOPII-66pin
  250. TC59LM814CFT - 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
  251. TC59LM814CFT-50 - 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
  252. TC59LM814CFT-55 - 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
  253. TC59LM814CFT-60 - 4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
  254. TC59LM818DMB - Density(Mb) = 288 ; Geometry = 16M X 18 ; Package = BGA60 (1.0 X 1.0mm Pitch) ; Features = SSTL1.8 Half/hstl ; Date = 2003-02-28 ; Additional Information = More Info
  255. TC59LM836DMB - Density(Mb) = 288 ; Geometry = 8M X 36 ; Package = BGA144(1.0 X 0.8mm Pitch) ; Features = SSTL1.8 Half/hstl ; Date = 2003-03-12 ; Additional Information = More Info
  256. TC59LM905AMB - Density(Mb) = 512 ; Geometry = 64M X 8 ; Package = BGA60 (1.0 X 1.0mm Pitch) ; Features = SSTL2 Half ; Date = 2003-04-21 ; Additional Information = More Info
  257. TC59LM913AMB - Density(Mb) = 512 ; Geometry = 32M X 16 ; Package = BGA60 (1.0 X 1.0mm Pitch) ; Features = SSTL2 Half ; Date = 2003-04-21 ; Additional Information = More Info
  258. TC59RM716GB - Type = RAMbus ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 16K/32ms ; Features = 800MHz; TRAC=45ns; 54CSP Consumer PCKG ; Power = Standard ; Date = 2000-07-12
  259. TC59RM716MB - Type = RAMbus ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 16K/32ms ; Features = 600/711/800MHz; 62CSP ; Power = Standard ; Date = 2000-04-27
  260. TC59RM716MB/RB - 128 Mbit Direct Rdram(tm)
  261. TC59RM716RB - Type = RAMbus ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 16K/32ms ; Features = 600/711/800MHz; 62CSP ; Power = Standard ; Date = 2000-04-27
  262. TC59RM718GB - MOS Digital Integrated Circuit, Silicon Monolithic
  263. TC59RM718MB - Type = RAMbus ; Density (Mb) = 144 ; Geometry = 8M X 18 ; Refresh = 16K/32ms ; Features = 600/711/800MHz; 62CSP ; Power = Standard ; Date = 2000-04-27
  264. TC59RM718MB/RB - 144 Mbit Direct Rdram(tm)
  265. TC59RM718RB - Type = RAMbus ; Density (Mb) = 144 ; Geometry = 8M X 18 ; Refresh = 16K/32ms ; Features = 600/711/800MHz; 62CSP ; Power = Standard ; Date = 2000-04-27
  266. TC59RM816MB - Type = RAMbus ; Density (Mb) = 256 ; Geometry = 16M X 16 ; Refresh = 16K/32ms ; Features = 600/711/800MHz; 92CSP ; Power = Standard ; Date = 2000-04-27
  267. TC59RM818MB - Type = RAMbus ; Density (Mb) = 288 ; Geometry = 16M X 18 ; Refresh = 16K/32ms ; Features = 600/711/800MHz; 92CSP ; Power = Standard ; Date = 2000-04-27
  268. TC59S6404 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  269. TC59S6404BFT - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  270. TC59S6404BFT-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  271. TC59S6404BFT-80 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  272. TC59S6404BFT/BFTL10 - 1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S Synchronous Dynamic RAM
  273. TC59S6404BFT/BFTL-80 - 1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S Synchronous Dynamic RAM
  274. TC59S6404BFTL - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  275. TC59S6404CFT - Type = Sdram ; Density (Mb) = 64 ; Geometry = 16M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 1999-08-11
  276. TC59S6408 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  277. TC59S6408BFT - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  278. TC59S6408BFT-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  279. TC59S6408BFT-80 - 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
  280. TC59S6408BFT/BFTL10 - 1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S Synchronous Dynamic RAM
  281. TC59S6408BFT/BFTL-80 - 1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S Synchronous Dynamic RAM
  282. TC59S6408BFTL - Mos Digital Integrated Circuit Silicon Monolithic
  283. TC59S6408BFTL-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  284. TC59S6408BFTL-80 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  285. TC59S6408CF - CMOS Sdram: 2,097,152 X 4 X 8
  286. TC59S6408CFT - Type = Sdram ; Density (Mb) = 64 ; Geometry = 16M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 1999-08-11
  287. TC59S6416 - 1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
  288. TC59S6416-10 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  289. TC59S6416-80 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  290. TC59S6416BFT - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  291. TC59S6416BFT-80 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  292. TC59S6416BFT/BFTL10 - 1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S Synchronous Dynamic RAM
  293. TC59S6416BFT/BFTL-80 - 1,048,576/2,097,152/4,194,304-wordsx4banksx16/8/4-bit S Synchronous Dynamic RAM
  294. TC59S6416BFTL - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  295. TC59S6416CF - CMOS Sdram: 1,48,576 X 4 X 16
  296. TC59S6416CFT - Type = Sdram ; Density (Mb) = 64 ; Geometry = 16M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 1999-08-11
  297. TC59S6432CF - 524,288-words X 4banks X 32-bits Sdram
  298. TC59S6432CFT - Type = Sdram ; Density (Mb) = 64 ; Geometry = 2M X 32 ; Refresh = 4K/64ms ; Features = CL2 & CL3; Up to 183MHz Clock Frequency ; Power = Standard/low ; Date = 2000-02-17
  299. TC59S6432DFT - Type = Sdram ; Density (Mb) = 64 ; Geometry = 2M X 32 ; Refresh = 4K/64ms ; Features = CL2 & CL3; Up to 200MHz Clock Frequency ; Power = Standard/low ; Date = 2001-04-20
  300. TC59S6432DFTI - Type = Sdram, Industrial Temp. ; Density (Mb) = 64 ; Geometry = 2M X 32 ; Refresh = 4K/64ms ; Features = CL2&CL3; Up to 143MHz Clock Frequency ; Power = Standard/low ; Date = 2001-09-03
  301. TC59SM704 - 128m CMOS Sdram: 8mx4x4
  302. TC59SM704AFT - Type = Sdram ; Density (Mb) = 128 ; Geometry = 32M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-08
  303. TC59SM704AFTL - 8,388,608-words W 4 Banks X 4-bits Sdram
  304. TC59SM704FT - Type = Sdram ; Density (Mb) = 128 ; Geometry = 32M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  305. TC59SM704FT-10 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 32M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  306. TC59SM704FT-80 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 32M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  307. TC59SM704FTL-10 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 32M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  308. TC59SM704FTL-80 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 32M X 4 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  309. TC59SM708 - 128m CMOS Sdram: 4mx8x4
  310. TC59SM708AFT - Type = Sdram ; Density (Mb) = 128 ; Geometry = 16M X 8 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-08
  311. TC59SM708AFTL - 4,194,304-words W 4 Banks X 8-bits Sdram
  312. TC59SM708FT - Type = Sdram ; Density (Mb) = 128 ; Geometry = 16M X 8 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  313. TC59SM708FT-10 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 16M X 8 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  314. TC59SM708FT-80 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 16M X 8 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  315. TC59SM708FTL-10 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 16M X 8 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  316. TC59SM708FTL-80 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 16M X 8 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  317. TC59SM716 - 128m CMOS Sdram: 2mx16x4
  318. TC59SM716AFT - Type = Sdram ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-08
  319. TC59SM716AFTI - Type = Sdram ; Density (Mb) = 128M ; Geometry = 8Mx16 ; Refresh = 4K/64ms ; Features = PC100/PC133/Industrial Temp ; Power = Standard ; Date = 2001-06-18
  320. TC59SM716AFTL - 2,097,152-words W 4 Banks X 16-bits Sdram
  321. TC59SM716FT - Type = Sdram ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  322. TC59SM716FT-10 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  323. TC59SM716FT-80 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  324. TC59SM716FTL-10 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  325. TC59SM716FTL-80 - Type = Sdram ; Density (Mb) = 128 ; Geometry = 8M X 16 ; Refresh = 4K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2000-02-23
  326. TC59SM804BFT - Type = Sdram ; Density (Mb) = 256 ; Geometry = 64M X 4 ; Refresh = 8K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2001-06-11
  327. TC59SM804CFT - Type = Sdram ; Density (Mb) = 256 ; Geometry = 64M X 4 ; Refresh = 8K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2001-02-01
  328. TC59SM804CMB - Type = Sdram ; Density (Mb) = 256 ; Geometry = 64M X 4 ; Refresh = 8K/64ms ; Features = PC100/PC133; 60-CSP ; Power = Standard/low ; Date = 2001-08-08
  329. TC59SM808BFT - Type = Sdram ; Density (Mb) = 256 ; Geometry = 32M X 8 ; Refresh = 8K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2001-06-11
  330. TC59SM808CFT - Type = Sdram ; Density (Mb) = 256 ; Geometry = 32M X 8 ; Refresh = 8K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2001-02-01
  331. TC59SM808CMB - Type = Sdram ; Density (Mb) = 256 ; Geometry = 32M X 8 ; Refresh = 8K/64ms ; Features = PC100/PC133; 60-CSP ; Power = Standard/low ; Date = 2001-08-08
  332. TC59SM816BFT - Type = Sdram ; Density (Mb) = 256 ; Geometry = 16M X 16 ; Refresh = 8K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2001-06-11
  333. TC59SM816CFT - Type = Sdram ; Density (Mb) = 256 ; Geometry = 16M X 16 ; Refresh = 8K/64ms ; Features = PC100/PC133 ; Power = Standard/low ; Date = 2001-02-01
  334. TC59SM816CFTI - Type = Sdram ; Density (Mb) = 256 ; Geometry = 16Mx16 ; Refresh = 8K/64ms ; Features = PC100/PC133/Industrial Temp ; Power = Standard ; Date = 2001-06-18
  335. TC59SM816CMB - Type = Sdram ; Density (Mb) = 256 ; Geometry = 16M X 16 ; Refresh = 8K/64ms ; Features = PC100/PC133; 60-CSP ; Power = Standard/low ; Date = 2001-08-08
  336. TC59WM803BFT - Type = DDR ; Density (Mb) = 256 ; Geometry = 64M X 4 ; Refresh = 8K/64ms ; Features = DDR266A, DDR266B, DDR200 ; Power = Standard ; Date = 2000-12-13
  337. TC59WM807BFT - Type = DDR ; Density (Mb) = 256 ; Geometry = 32M X 8 ; Refresh = 8K/64ms ; Features = DDR266A, DDR266B, DDR200 ; Power = Standard ; Date = 2000-12-13
  338. TC59WM815BFT - Type = DDR ; Density (Mb) = 256 ; Geometry = 16M X 16 ; Refresh = 8K/64ms ; Features = DDR266A, DDR266B, DDR200 ; Power = Standard ; Date = 2000-12-13
  339. TC59YM916BKG - The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste
  340. TC59YM916BKG24A - The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste
  341. TC59YM916BKG32A - The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste
  342. TC59YM916BKG32B - The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste
  343. TC59YM916BKG32C - The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste
  344. TC59YM916BKG40B - The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste
  345. TC59YM916BKG40C - The second generation 512-megabit XDRTM DRAMThe Rambus XDRTM DRAM device isA general purpose high-performance memory device suitable for use in abroad range of applications including computer memory, graphics, video, and any other application where highbandwidth and low latency are required.The 512Mb Rambus XDR DRAM device isA CMOS DRAM organized as 32M words by 16 bits. The use ofDifferential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while usingconventional syste
  346. TC5BV32ADC - 32mb (4mx8-bit) CMOS NAND E2PROM(4m Byte Smartmedia(tm))
  347. TC6374AF - Pc Card Ata To Sd Memory Card, Multimediacard and Smartmedia-tm Controller
  348. TC6384AF - Secure Digital Host Controllers (SDHC) Are The First Standalone Chips to ProvideA Dedicated Hardware Interface For SD Memory, Smartmedia and Multimedia Cards and CAN be Integrated Into Laptops, Cell Phones, Pdas, Digital Cameras and Other Mobile Products.
  349. TC6387XB - Sd Memory Card / Sdio Card Controller
  350. TC74A23F - Toshiba Cmos Digital Integrated Circuit Silicon Monolithic
  351. TC74AC00 - Quad 2-input NAND Gate
  352. TC74AC00F - QUAD 2 - INPUT NAND GATE
  353. TC74AC00FN - Quad 2 - Input Nand Gate
  354. TC74AC00FT - QUAD 2 - INPUT NAND GATE
  355. TC74AC00P - QUAD 2 - INPUT NAND GATE
  356. TC74AC02 - Quad 2-input NOR GATE
  357. TC74AC02F - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  358. TC74AC02FN - Cmos Digital Integrated Circuit Silicon Monolithic
  359. TC74AC02FT - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  360. TC74AC02P - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  361. TC74AC04 - Hex Inverter
  362. TC74AC04F - Hex Inverter
  363. TC74AC04FN - HEX INVERTER
  364. TC74AC04FT - HEX INVERTER
  365. TC74AC04P - HEX INVERTER
  366. TC74AC05 - Hex Inverter (open Drain)
  367. TC74AC05F - HEX INVERTER
  368. TC74AC05FN - Hex Inverter
  369. TC74AC05P - HEX INVERTER
  370. TC74AC08 - Quad 2-input and Gate
  371. TC74AC08F - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  372. TC74AC08FN - Toshiba Cmos Digital Integrated Circuit Silicon Monolithic
  373. TC74AC08FT - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  374. TC74AC08P - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  375. TC74AC0FN -
  376. TC74AC0FT -
  377. TC74AC10 - Triple 3-input NAND Gate
  378. TC74AC109 - Dual J-k Flip Flop With Preset and Clear
  379. TC74AC109FN - Function = Dual J-k Flip-flop With Preset and Clear, Pins = 16
  380. TC74AC109P - Function = Dual J-k Flip-flop With Preset and Clear, Pins = 16
  381. TC74AC10F - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  382. TC74AC10FN - Cmos Digital Integrated Circuit Silicon Monolithic
  383. TC74AC10P - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  384. TC74AC11 - Triple 3-input and Gate
  385. TC74AC112 - Dual J-k Flip Flop With Preset and Clear
  386. TC74AC112F - Dual J-k Flip Flop With Preset and Clear
  387. TC74AC112FN - DUAL J-K FLIP FLOP WITH PRESET and CLEAR
  388. TC74AC112P - DUAL J-K FLIP FLOP WITH PRESET and CLEAR
  389. TC74AC11FN - Function = Triple 3-input and Gate, Pins = 14
  390. TC74AC11P - Function = Triple 3-input and Gate, Pins = 14
  391. TC74AC125 - Quad Bus Buffer
  392. TC74AC125F - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  393. TC74AC125FN - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  394. TC74AC125FT - Cmos Digital Integrated Circuit Silicon Monolithic
  395. TC74AC125P - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  396. TC74AC126 - Quad Bus Buffer
  397. TC74AC126F - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  398. TC74AC126FN - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  399. TC74AC126P - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  400. TC74AC12FN -
  401. TC74AC12FT -
  402. TC74AC138 - 3-to-8 Line Decoder
  403. TC74AC138F - 3-to-8 Line Decoder
  404. TC74AC138FN - 3-TO-8 LINE DECODER
  405. TC74AC138FT - 3-TO-8 LINE DECODER
  406. TC74AC138P - 3-TO-8 LINE DECODER
  407. TC74AC139 - Dual 2-to-4 Line Decoder
  408. TC74AC139F - Dual 2 - To - 4 Line Decoder
  409. TC74AC139FN - DUAL 2 - TO - 4 LINE DECODER
  410. TC74AC139FP - DUAL 2 - TO - 4 LINE DECODER
  411. TC74AC139FT - Function = Dual 2-to-4 Line Decoder, Pins = 16
  412. TC74AC139P - DUAL 2 - TO - 4 LINE DECODER
  413. TC74AC13FN -
  414. TC74AC13FT -
  415. TC74AC14 - Hex Schmitt Inverter
  416. TC74AC14F - HEX SCHMITT INVERTER
  417. TC74AC14FN - Hex Schmitt Inverter
  418. TC74AC14FT - HEX SCHMITT INVERTER
  419. TC74AC14P - HEX SCHMITT INVERTER
  420. TC74AC151 - 8-channel Multiplexer
  421. TC74AC151F - 8 Channel Multiplexer
  422. TC74AC151FN - 8 CHANNEL MULTIPLEXER
  423. TC74AC151P - 8 CHANNEL MULTIPLEXER
  424. TC74AC153 - Dual 4-channel Multiplexer
  425. TC74AC153FN - Function = Dual 4-channel Multiplexer, Pins = 16
  426. TC74AC153P - Function = Dual 4-channel Multiplexer, Pins = 16
  427. TC74AC157 - Quad 2-channel Multiplexer
  428. TC74AC157FN - Function = Quad 2-channel Multiplexer, Pins = 16
  429. TC74AC157FT - Function = Quad 2-channel Multiplexer, Pins = 16
  430. TC74AC157P - Function = Quad 2-channel Multiplexer, Pins = 16
  431. TC74AC15FN -
  432. TC74AC15FT -
  433. TC74AC161 - Synchronous Presettable 4-bit Binary Counter
  434. TC74AC161F - SYNCHRONOUS PRESETTABLE 4 BIT BINARY COUNTER
  435. TC74AC161FN - Synchronous Presettable 4 Bit Binary Counter
  436. TC74AC161FT - SYNCHRONOUS PRESETTABLE 4 BIT BINARY COUNTER
  437. TC74AC161P - SYNCHRONOUS PRESETTABLE 4 BIT BINARY COUNTER
  438. TC74AC163 - Synchronous Presettable 4-bit Binary Counter
  439. TC74AC163F - SYNCHRONOUS PRESETTABLE 4 BIT BINARY COUNTER
  440. TC74AC163FN - SYNCHRONOUS PRESETTABLE 4 BIT BINARY COUNTER
  441. TC74AC163FT - SYNCHRONOUS PRESETTABLE 4 BIT BINARY COUNTER
  442. TC74AC163P - SYNCHRONOUS PRESETTABLE 4 BIT BINARY COUNTER
  443. TC74AC164 - 8-bit Shift Register (s-in, P-out)
  444. TC74AC164F - Toshiba Mos Digital Integrated Circuit Silicon Monolithic
  445. TC74AC164FN - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  446. TC74AC164FT - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  447. TC74AC164P - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  448. TC74AC166 - 8-bit Shift Register 9p-in, S-out)
  449. TC74AC166FN - Function = 8-bit Sipo Shift Register, Pins = 16
  450. TC74AC166P - Function = 8-bit Sipo Shift Register, Pins = 16
  451. TC74AC16FN -
  452. TC74AC16FT -
  453. TC74AC174 - Hex D-type Flip Flop With Clear
  454. TC74AC174F - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  455. TC74AC174FN - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  456. TC74AC174FT - Toshiba Cmos Digital Integrated Circuit Silicon Monolithic
  457. TC74AC174P - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  458. TC74AC175 - Quad D-type Flip Flop With Clear
  459. TC74AC175F - Toshiba Cmos Digital Integrated Circuit Silicon Monolithic
  460. TC74AC175FN - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  461. TC74AC175FT - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  462. TC74AC175P - TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  463. TC74AC17FN -
  464. TC74AC17FT -
  465. TC74AC1FN -
  466. TC74AC1FT -
  467. TC74AC20 - Dual 4-input NAND Gate
  468. TC74AC20F - Cmos Digital Integrated Circuit Silicon Monolithic
  469. TC74AC20FN - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  470. TC74AC20P - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  471. TC74AC240 - Octal Bus Buffer
  472. TC74AC240F - Octal Bus Buffer
  473. TC74AC240FT - OCTAL BUS BUFFER
  474. TC74AC240FW - OCTAL BUS BUFFER
  475. TC74AC240P - OCTAL BUS BUFFER
  476. TC74AC244 - Octal Bus Buffer
  477. TC74AC244F - OCTAL BUS BUFFER
  478. TC74AC244FT - OCTAL BUS BUFFER
  479. TC74AC244FW - OCTAL BUS BUFFER
  480. TC74AC244P - OCTAL BUS BUFFER
  481. TC74AC245 - Octal Bus Transceiver
  482. TC74AC245F - OCTAL BUS TRANSCEIVER
  483. TC74AC245FT - Octal Bus Transceiver
  484. TC74AC245FW - OCTAL BUS TRANSCEIVER
  485. TC74AC245P - OCTAL BUS TRANSCEIVER
  486. TC74AC24FT -
  487. TC74AC24FW -
  488. TC74AC257 - 2-channel Multiplexer
  489. TC74AC257F - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  490. TC74AC257FN - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  491. TC74AC257P - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  492. TC74AC258 - 2-channel Multiplexer
  493. TC74AC258F - Cmos Digital Integrated Circuit Silicon Monolithic
  494. TC74AC258FN - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  495. TC74AC258P - CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
  496. TC74AC25FN -
  497. TC74AC273 - Octal D-type Flip Flop With Clear
  498. TC74AC273F - Octal D Type Flip Flop With Clear
  499. TC74AC273F - Toshiba CMOS Digital intergrated circuit silicon monolithic
  500. TC74AC273FP - OCTAL D TYPE FLIP FLOP WITH CLEAR
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