GT10J312SM (Toshiba)
Electronic component documentation (datasheet) «GT10J312SM» (IGBTs (Insulated Gate Bipolar Transistors)), manufacturer Toshiba. Download datasheet file:
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| Partname | GT10J312SM |
| Description | Vces (volts) = 600 ; Ic (amps) = 10 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.5 ; Additional Information = |
| Functional | IGBTs (Insulated Gate Bipolar Transistors) | | Manufacturer | Toshiba Semiconductor |  |
| Site | www.semicon.toshiba.co.jp |
| | | Size | Pages: 6, 295.12Kb |
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