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GT30J322 (Toshiba)

Electronic component documentation (datasheet) «GT30J322» (IGBTs (Insulated Gate Bipolar Transistors)), manufacturer Toshiba. Download datasheet file:



Datasheet GT30J322 manufacturer Toshiba
PartnameGT30J322
DescriptionN Channel Mos Type (The 4th Generation Current Resonance Inverter Switching Applications)
FunctionalIGBTs (Insulated Gate Bipolar Transistors)
ManufacturerToshiba SemiconductorToshiba
Sitewww.semicon.toshiba.co.jp
SizePages: 5, 258.78Kb
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