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MG150J1ZS50 (Toshiba)

Electronic component documentation (datasheet) «MG150J1ZS50» (IGBTs (Insulated Gate Bipolar Transistors)), manufacturer Toshiba. Download datasheet file:



Datasheet MG150J1ZS50 manufacturer Toshiba
PartnameMG150J1ZS50
DescriptionVces (volts) = 600 ; Ic (amps) = 150 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4* ; Toff (usec) = 0.5*
FunctionalIGBTs (Insulated Gate Bipolar Transistors)
ManufacturerToshiba SemiconductorToshiba
Sitewww.semicon.toshiba.co.jp
SizePages: 5, 298.26Kb
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