NLAS4783MN1R2G - Triple SPDT High-Speed, Low-Voltage, 1 ohm CMOS Analog SwitchThe NLAS4783 isA triple independent ultra−low RON SPDT analogswitch with ENABLE. This device is designed for low operatingvoltage, high current switching of speaker output for cell phoneapplications. It can switchA balanced stereo output. The NLAS4783can handleA balanced microphone/speaker/ring−tone generator in amonophone mode. The device containsA break−make feature.Features• Single Supply Operation1.65 to 4.7V VCCFunction
NLAS5223 - Ultra−low 0.5ohm Dual Spdt Analog Switch
NLAS5223LMNR2G - Ultra−Low 0.5ohm Dual SPDT Analog Switch
NLAS5223MNR2G - Ultra−Low 0.5ohm Dual SPDT Analog Switch
NLAS9431 - Low Voltage Single Supply Dual DPDT Analog SwitchLow Voltage Single SupplyDual DPDT Analog SwitchThe NLAS9431 is an advanced dual−independent CMOS doublepole−double throw (DPDT) analog switch fabricated with silicongate CMOS technology. It achieves high speed propagation delaysand low ON resistances while maintaining CMOS low powerdissipation. This DPDT controls analog and digital voltages that mayvary across the full power−supply range (from VCC to GND).The device has been designed so the
NLAS9431MTR2G - Low Voltage Single Supply Dual DPDT Analog SwitchLow Voltage Single SupplyDual DPDT Analog SwitchThe NLAS9431 is an advanced dual−independent CMOS doublepole−double throw (DPDT) analog switch fabricated with silicongate CMOS technology. It achieves high speed propagation delaysand low ON resistances while maintaining CMOS low powerdissipation. This DPDT controls analog and digital voltages that mayvary across the full power−supply range (from VCC to GND).The device has been designed so the
NLAST4599 - Low Voltage Single Supply Spdt Analog Switch
NLAST4599DFT2 - Low Voltage Single Supply SPDT Analog Switch, Package: SC-88 (SOT-363), Pins=6
NLAST4599DTT1 - Low Voltage Single Supply SPDT Analog Switch, Package: SC-88 (SOT-363), Pins=6
NLAST9431 - Product DescriptionThe NLAST44599 is an advanced CMOS dual-independent DPDT (double pole-double throw) analog switch, fabricated withsilicon gate CMOS technology. It achieves high-speed propagation delays and low ON resistances while maintaining CMOS low-power dissipation. This DPDT controls analog and digital voltages that may vary across the full power-supply range (from VCC to GND).The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical
NLAST9431MTR2G - Product DescriptionThe NLAST44599 is an advanced CMOS dual-independent DPDT (double pole-double throw) analog switch, fabricated withsilicon gate CMOS technology. It achieves high-speed propagation delays and low ON resistances while maintaining CMOS low-power dissipation. This DPDT controls analog and digital voltages that may vary across the full power-supply range (from VCC to GND).The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical
NSS12200WT1G - 12 V, 3 A, Low Vce(sat) Pnp Transistor
NSS12500UW3 - Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
NSS12500UW3T2G - Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
NSS20201MR6 - 20 V, 3 A, Low VCE(sat) NPN Transistor
NSS20201MR6D - 20 V, 3 A, Low Vce(sat) Npn Transistor
NSS20500UW3 - Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
NSS20500UW3T2G - Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
NSS30070MR6T1G - 30V 700mA LOW VCE(sat) PNP Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Features and Applications Features High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Applications Load Switching, Batte
NSS30071MR6T1G - 30V 700mA LOW VCE(sat) Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Features and Applications Features High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Load Switching, Battery Charging, Exte
NSS30100LT1G - 30 V, 2 A, Low Vce(sat) Pnp Transistor
NSS30101LT1G - 30 V, 2 A, Low Vce(sat) Npn Transistor
NSS40500UW3 - Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
NSS40500UW3G - Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
NSTB60ADW1T1 - Small Signal Bias Resistor Transistor SC88, (SOT363) Complimentary NPN & PNP 50V, Package: SC-88 (SOT-363), Pins=6
NSTB60BDW1T1 - Pnp General Purpose and Npn Bias Resistor Transistor Combination
NTA4001N - Small Signal Mosfet 20 V, 238 Ma, Single, N−channel, Gate Esd Protection, Sc−75
NTA4001NT1 - Small Signal MOSFET 20 V, 238 mA, Single, N−Channel, Gate ESD Protection, SC−75
NTA4001NT1G - Small Signal MOSFET 20 V, 238 mA, Single, N−Channel, Gate ESD Protection, SC−75
NTA7002N - Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75Features Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available Application Power Management Load Switch Level Shift
NTA7002NT1 - Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75Features Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available Application Power Management Load Switch Level Shift
NTA7002NT1G - Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75Features Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available Application Power Management Load Switch Level Shift
NTB10N60 - Obsolete, no on Replacement Part Available, Package: D2PAK, Pins=3
NTB125N02R - Power MOSFET 125 A, 24V N-Channel TO-220, D2PAK
NTB125N02RT4 - Power Mosfet 125 A, 24V N-channel To-220, D2pak
NTB12N50 - Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 500v, 12a
NTD4302-1 - Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
NTD4302T4 - Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
NTD4804N - Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK * Low RDS(on) to minimize Conduction Losses * Low Capacitance to Minimize Driver Losses * Optimized Gate Charge to Minimize Switching Losses * These are Pb-Free Devices
NTD4804N-1G - Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK * Low RDS(on) to minimize Conduction Losses * Low Capacitance to Minimize Driver Losses * Optimized Gate Charge to Minimize Switching Losses * These are Pb-Free Devices
NTD4804N-35G - Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK * Low RDS(on) to minimize Conduction Losses * Low Capacitance to Minimize Driver Losses * Optimized Gate Charge to Minimize Switching Losses * These are Pb-Free Devices
NTD4804NT4G - Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK * Low RDS(on) to minimize Conduction Losses * Low Capacitance to Minimize Driver Losses * Optimized Gate Charge to Minimize Switching Losses * These are Pb-Free Devices
NTD4805N - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4805N-1G - Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK
NTD4805N-35G - Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK
NTD4805NT4G - Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK
NTD4806N - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4806N-1G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4806N-35G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4806NT4G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4808N - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4808N-1G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4808N-35G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4808NT4G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4809N - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4809N-1G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4809N-35G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4809NT4G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4810N - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4810N-1G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4810N-35G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4810NT4G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4813N - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4813N-1G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4813N-35G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4813NT4G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4815N - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4815N-1G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4815N-35G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD4815NT4G - Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK
NTD5406N - Power MOSFET 40 V, 70 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability * Low Gate Charge * These are Pb-Free DevicesApplications
NTD5406NG - Power MOSFET 40 V, 70 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability * Low Gate Charge * These are Pb-Free DevicesApplications
NTD5407N - Power MOSFET 40 V, 38 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability * Low Gate Charge * These are Pb-Free Devices
NTD5407NG - Power MOSFET 40 V, 38 A, Single N-Channel, DPAK * Low RDS(on) * High Current Capability * Low Gate Charge * These are Pb-Free Devices
NTD5N50 - Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 500v, 5a
NTD5N50-1 - Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 500v, 5a
NTD5N50T4 - Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 500v, 5a
NTD60N02R - Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-001 - Power Mosfet 62 A, 24 V, N−channel, Dpak
NTD60N02R-032 - Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-032G - Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-1G - Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02RG - Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02RT4 - Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02RT4G - Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD65N03R-1 - Power MOSFET 25 V, 65 A, Single N-Channel, DPAKFeatures• Low RDS(on)• Ultra Low Gate Charge• Low Reverse Recovery Charge• Pb−Free Packages are AvailableApplications• Desktop CPU Power• DC−DC Converters• High and Low Side Switch
NTD65N03R-1G - Power MOSFET 25 V, 65 A, Single N-Channel, DPAKFeatures• Low RDS(on)• Ultra Low Gate Charge• Low Reverse Recovery Charge• Pb−Free Packages are AvailableApplications• Desktop CPU Power• DC−DC Converters• High and Low Side Switch
NTD65N03R-35 - Power MOSFET 25 V, 65 A, Single N-Channel, DPAKFeatures• Low RDS(on)• Ultra Low Gate Charge• Low Reverse Recovery Charge• Pb−Free Packages are AvailableApplications• Desktop CPU Power• DC−DC Converters• High and Low Side Switch
NTD65N03R-35G - Power MOSFET 25 V, 65 A, Single N-Channel, DPAKFeatures• Low RDS(on)• Ultra Low Gate Charge• Low Reverse Recovery Charge• Pb−Free Packages are AvailableApplications• Desktop CPU Power• DC−DC Converters• High and Low Side Switch
NTD65N03RG - Power MOSFET 25 V, 65 A, Single N-Channel, DPAKFeatures• Low RDS(on)• Ultra Low Gate Charge• Low Reverse Recovery Charge• Pb−Free Packages are AvailableApplications• Desktop CPU Power• DC−DC Converters• High and Low Side Switch
NTD65N03RT4 - Power MOSFET 25 V, 65 A, Single N-Channel, DPAKFeatures• Low RDS(on)• Ultra Low Gate Charge• Low Reverse Recovery Charge• Pb−Free Packages are AvailableApplications• Desktop CPU Power• DC−DC Converters• High and Low Side Switch
NTD65N03RT4G - Power MOSFET 25 V, 65 A, Single N-Channel, DPAKFeatures• Low RDS(on)• Ultra Low Gate Charge• Low Reverse Recovery Charge• Pb−Free Packages are AvailableApplications• Desktop CPU Power• DC−DC Converters• High and Low Side Switch
NTD6600N - Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAKFeatures• Source−to−Drain Diode Recovery Time Comparable to aDiscrete Fast Recovery Diode• Avalanche Energy Specified• Logic Level• Pb−Free Package is AvailableTypical Applications• PWM Motor Controls• Power Supplies• Converters
NTD6600N-1 - Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAKFeatures• Source−to−Drain Diode Recovery Time Comparable to aDiscrete Fast Recovery Diode• Avalanche Energy Specified• Logic Level• Pb−Free Package is AvailableTypical Applications• PWM Motor Controls• Power Supplies• Converters
NTD6600NT4 - Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAKFeatures• Source−to−Drain Diode Recovery Time Comparable to aDiscrete Fast Recovery Diode• Avalanche Energy Specified• Logic Level• Pb−Free Package is AvailableTypical Applications• PWM Motor Controls• Power Supplies• Converters
NTD6600NT4G - Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAKFeatures• Source−to−Drain Diode Recovery Time Comparable to aDiscrete Fast Recovery Diode• Avalanche Energy Specified• Logic Level• Pb−Free Package is AvailableTypical Applications• PWM Motor Controls• Power Supplies• Converters
NTD6N40 - Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 400v, 6a
NTD6N40-001 - Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 400v, 6a
NTD6N40T4 - Tmos 7 E-FET(tm) Power Field Effect Transistor: N-channel Enhancement-mode Silicon Gate: 400v, 6a