NTF6P02T3 - Power Mosfet -6.0 Amps, -20 Volts P-channel Sot-223
NTGD4161P - Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 * Fast Switching Speed * Low Gate Charge * Low RDS(on) * Indpendently Connected Devices to Provide Design Flexibility * This isA Pb-Free Device
NTGD4161PT1G - Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 * Fast Switching Speed * Low Gate Charge * Low RDS(on) * Indpendently Connected Devices to Provide Design Flexibility * This isA Pb-Free Device
NTGS4111P - Power MOSFET -30 V, -4.7A, Single P-Channel, TSOP-6 Leading −30V Trench Process For Low RDS(on) Low Profile Package Suitable For Portable Applications Surface Mount TSOP−6 Package Saves Board Space Pb−Free Package Available (G Suffix) Improved Efficiency For Battery ApplicationsApplications Battery Management and Switching Load Switching Battery Protection
NTGS4111PT1 - Power MOSFET -30 V, -4.7A, Single P-Channel, TSOP-6 Leading −30V Trench Process For Low RDS(on) Low Profile Package Suitable For Portable Applications Surface Mount TSOP−6 Package Saves Board Space Pb−Free Package Available (G Suffix) Improved Efficiency For Battery ApplicationsApplications Battery Management and Switching Load Switching Battery Protection
NTGS4111PT1G - Power MOSFET -30 V, -4.7A, Single P-Channel, TSOP-6 Leading −30V Trench Process For Low RDS(on) Low Profile Package Suitable For Portable Applications Surface Mount TSOP−6 Package Saves Board Space Pb−Free Package Available (G Suffix) Improved Efficiency For Battery ApplicationsApplications Battery Management and Switching Load Switching Battery Protection
NTHC5513 - Power MOSFET 20 V, +3.9A / −3.0 A, Complementary ChipFET-TM
NTHC5513T1 - Power Mosfet 20 V, +3.9A / −3.0 A, Complementary Chipfet-tm
NTHC5513T1G - Power MOSFET 20 V, +3.9A / −3.0 A, Complementary ChipFET-TM
NTHD2102P - Power Mosfet −8.0 V, −4.6A Dual P−channel Chipfet
NTHD2102PT1 - Power MOSFET −8.0 V, −4.6A Dual P−Channel ChipFET
NTHD2102PT1G - Power MOSFET −8.0 V, −4.6A Dual P−Channel ChipFET
NTHD3100C - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3100CT1 - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3100CT1G - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3100CT3 - Power MOSFET Complementary, 20 V, 3.1 A/-2.9A ChipFET Features Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller Than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Trench P−Channel For Low on Resistance Low Gate Charge N−Channel For Test Switching Pb−Free Package is AvailableApplications DC−to−DC Conversion Circuits Load Switch Applications Requiring Level Shift Drive Small Brushless DC Motors Ideal For Power Management Appl
NTHD3101F - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD3101FT1 - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD3101FT1G - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD3101FT3 - Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, W/2.2A Schottky Barrier Diode,
NTHD4102P - Power Mosfet -20 V, -4.1 A, Dual P-channel Chipfet
NTHD4102PT1 - Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET
NTHD4102PT1G - Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET
NTHD4401P - Power Mosfet −20 V, −3.0 A, Dual P−channel, Chipfet
NTHD4401PT1 - Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET
NTHD4401PT1G - Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET
NTHD4502N - Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET
NTHD4502NT1 - Power Mosfet 30 V, 3.9 A, Dual N−channel Chipfet
NTHD4502NT1G - Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET
NTHD4508N - Power Mosfet 20 V, 4.1 A, Dual N−channel Chipfet
NTHD4508NT1 - Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET
NTHD4508NT1G - Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET
NTJD4105C - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4105CT1 - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4105CT1G - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4105CT2 - Small Signal MOSFET 20V / −8.0 V, Complementary, +0.63A / −0.775 A, SC−88
NTJD4152P - Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, Esd Protected SC-88Features Leading Trench Technology For Low RDS(ON) Performance Small Footprint Package (SC70−6 Equivalent) Esd Protected Gate Pb−Free Package is AvailableApplications Load/power Management Charging Circuits Load Switching Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJD4152PT1 - Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, Esd Protected SC-88Features Leading Trench Technology For Low RDS(ON) Performance Small Footprint Package (SC70−6 Equivalent) Esd Protected Gate Pb−Free Package is AvailableApplications Load/power Management Charging Circuits Load Switching Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJD4158C - Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Features and Applications Features Leading 20V Trench for Low RDS(on) Performance ESD Protected Gate SC-88 Package for Small Footprint (2x2 mm) This isA Pb-Free Device Applications DC-DC Conversion Load/Power Management Load Switch Cell Phones, MP3s, Digital Cameras, PDAs
NTJD4158CT1G - Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 Features and Applications Features Leading 20V Trench for Low RDS(on) Performance ESD Protected Gate SC-88 Package for Small Footprint (2x2 mm) This isA Pb-Free Device Applications DC-DC Conversion Load/Power Management Load Switch Cell Phones, MP3s, Digital Cameras, PDAs
NTJD4401NT1 - Small Signal MOSFET 20 V, Dual N-Channel, SC-88 Esd Protection, Package: SC-88 (SOT-363), Pins=6
NTJD4401NT1G - Small Signal MOSFET 20 V, Dual N-Channel, SC-88 Esd Protection, Package: SC-88 (SOT-363), Pins=6
NTJS3151P - Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm, SC70−6 Equivalent) Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS3151PT1 - Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm, SC70−6 Equivalent) Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS3151PT1G - Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, SC88Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm, SC70−6 Equivalent) Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS4151P - Trench Power MOSFET -20 V, -4.2 A, P-Channel, SC-88 Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm) For Maximum Circuit BoardUtilization, Same as SC−70−6 Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS4151PT1 - Trench Power MOSFET -20 V, -4.2 A, P-Channel, SC-88 Features Leading Trench Technology For Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 Mm) For Maximum Circuit BoardUtilization, Same as SC−70−6 Gate Diodes For Esd Protection Pb−Free Package is AvailableApplications High Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and Pdas
NTJS4160NT1G - Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88Power MOSFET 30 V, 3.2 A, Single N-Chan...
NTJS4405N - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT1 - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT1G - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT4 - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTJS4405NT4G - Small Signal MOSFET 25 V, 1.2A Single N-channel SC-88 Features Advance Planar Technology For Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life Pb−Free Packages Are AvailableApplications Boost and Buck Converter Load Switch Battery Protection
NTK3043N - Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723 Power MOSFET 20 V, 285...
NTK3043NT1G - Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723 Power MOSFET 20 V, 285...
NTK3142P - Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723 Small S...
NTK3142PT1G - Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723 Small S...
NTL4502N - Quad Power Mosfet 24 V, 15 A, N−channel, Pinpak-tm Package
NTL4502NT1 - Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAK-TM Package
NTLJF3117P - Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0A Schottky Barrier D...
NTLJF3117PT1G - Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0A Schottky Barrier D...
NTMFS4108N - Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SO-8 Package Footprint. New Package Provides Capability of Inspection and Probe After Board Mounting Ultra Low RDS(on) (at 4.5 VGS, Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications High Speed Switching Capabiltiy Applications Notebook Computer Vcore Applications Network Applications DC-DC Converters
NTMFS4108NT1G - Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SO-8 Package Footprint. New Package Provides Capability of Inspection and Probe After Board Mounting Ultra Low RDS(on) (at 4.5 VGS, Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications High Speed Switching Capabiltiy Applications Notebook Computer Vcore Applications Network Applications DC-DC Converters
NTMFS4108NT3G - Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package Features Thermally and Electrically Enhanced Packaging Compatible with Standard SO-8 Package Footprint. New Package Provides Capability of Inspection and Probe After Board Mounting Ultra Low RDS(on) (at 4.5 VGS, Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications High Speed Switching Capabiltiy Applications Notebook Computer Vcore Applications Network Applications DC-DC Converters
NTMFS4119N - Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead
NTMFS4120N - Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead
NTMFS4121N - Power MOSFET 30 V, 29 A, Single N-Channel SO-8 Flat Lead
NTMFS4122N - Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead
NTMFS4701N - Power MOSFET 30 V, 20 A, Single N-Channel, SO-8 Flat Lead Package
NTMFS4701NT1G - Power MOSFET 30 V, 20 A, Single N-Channel, SO-8 Flat Lead Package
NTMFS4701NT3G - Power MOSFET 30 V, 20 A, Single N-Channel, SO-8 Flat Lead Package
NTMFS4707N - Power MOSFET 30 V, 17 A, Single N-Channel SO-8 Flat LeadFeatures• Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG• Optimized for Low Side Synchronous Applications• High Speed Switching CapabilityApplications• Notebook Computer Vcore Applications• Network Applications• DC−DC Converters
NTMFS4833N - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4833NT1G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4833NT3G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4834N - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4834NT1G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4834NT3G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4835N - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4835NT1G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4835NT3G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4836N - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4836NT1G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4836NT3G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4837N - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4837NT1G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4837NT3G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4839N - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4839NT1G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4839NT3G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4841N - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4841NT1G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4841NT3G - Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMS10P02R2 - Power Mosfet -10 Amps, -20 Volts P−channel Enhancement−mode Single So−8 Package
NTQD4154Z - Power MOSFET 20 V, 7.5A, Common-Drain, Dual N-channel TSSOP-8 Features Common Drain For Ease of Circuit Connection Low RDS(on) Extending Battery Life Esd Protected GateApplications Li−Ion Battery Protection Circuit Power Management in Portable and Battery−Powered Products
NTQD4154ZR2 - Power MOSFET 20 V, 7.5A, Common-Drain, Dual N-channel TSSOP-8 Features Common Drain For Ease of Circuit Connection Low RDS(on) Extending Battery Life Esd Protected GateApplications Li−Ion Battery Protection Circuit Power Management in Portable and Battery−Powered Products
NUF2042XV6 - USB Upstream Terminator with ESD ProtectionProvides USB Line Termination, Filtering and ESD Protection Single IC Offers Cost Savings Bidirectional EMI Filtering Prevents Noise from Entering/Leaving the System Compliance with IEC61000-4-2 (Level 4), 8 kV (Contact) and 15 kV (Air) ESD Ratings: Machine Model=C and Human Body Model=3B These are Pb-Free devices
NUF2042XV6T1 - USB Upstream Terminator with ESD ProtectionProvides USB Line Termination, Filtering and ESD Protection Single IC Offers Cost Savings Bidirectional EMI Filtering Prevents Noise from Entering/Leaving the System Compliance with IEC61000-4-2 (Level 4), 8 kV (Contact) and 15 kV (Air) ESD Ratings: Machine Model=C and Human Body Model=3B These are Pb-Free devices
NUF2070MN - 2 Line Audio EMI Filter with ESD ProtectionNUF2070MN isA 2 line LC EMI filter array des...
NUF2070MNT1G - 2 Line Audio EMI Filter with ESD ProtectionNUF2070MN isA 2 line LC EMI filter array des...
NUF2114MN - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -30 dB attenuation at frequencies from 900 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2114MNT1G - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -30 dB attenuation at frequencies from 900 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2116 - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -35 dB attenuation at frequencies from 800 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2116MNT1G - 2 Line Audio EMI Filter with ESD ProtectionThis device isA 2 line audio EMI filter array designed for speaker applications. It offers greater than -35 dB attenuation at frequencies from 800 MHz to 3.0 GHz. This device also offers ESD protection-clamping transients from static discharges and ESD protection is provided across all capacitors. Features Provides EMI Filtering and ESD Protection Integration of 10 Discretes Compliance with IEC61000-4-2 (Level 4), 30 kV (Contact) DFN8, 2x2 mm Package Moisture Sen
NUF2220 - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at frequencies from800 MHz to 2.4 GHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2220XV6T1 - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at frequencies from800 MHz to 2.4 GHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2221W1T2 - Usb Upstream Terminator With Esd Protection
NUF2222 - 2 Line USB 1.1 Upstream EMI FilterThis device isA 2 line EMI filter array for USB port protection in wireless applications. Greater than -20 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. It also has 2 lines for dedicated ESD protection. ESD protection is provided across all capacitors. Features and Applications Features EMI Filtering and ESD Protection Integration of 10 Discretes Provides Protection for IEC61000-4-2 (Level 4) 15 kV (Contact) Flip-Chip Package Moisture Sensitivity Level
NUF2222FCT1G - 2 Line USB 1.1 Upstream EMI FilterThis device isA 2 line EMI filter array for USB port protection in wireless applications. Greater than -20 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. It also has 2 lines for dedicated ESD protection. ESD protection is provided across all capacitors. Features and Applications Features EMI Filtering and ESD Protection Integration of 10 Discretes Provides Protection for IEC61000-4-2 (Level 4) 15 kV (Contact) Flip-Chip Package Moisture Sensitivity Level
NUF2230 - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −30 dB attenuation is obtained at frequencies from800 MHz to 900 MHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2230XV6T1 - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −30 dB attenuation is obtained at frequencies from800 MHz to 900 MHz. It also offers ESD protection−clampingtransients from static discharges. ESD protection is provided across allcapacitors.Features• EMI Filtering and ESD Protection• Integration of 10 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SOT−563 Package• Moisture Sensiti
NUF2240 - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at 800 MHz. It also offersESD protection−clamping transients from static discharges.ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 11 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SC−88/SOT−363 Package• Moisture Sensitivity Level 1• E
NUF2240W1T1G - 2 Line EMI Filter with ESD ProtectionThis device isA 2 line EMI filter array for wireless applications.Greater than −20 dB attenuation is obtained at 800 MHz. It also offersESD protection−clamping transients from static discharges.ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 11 Discrete Components• Compliance with IEC61000−4−2 (Level 4)> 8.0 kV (Contact)• SC−88/SOT−363 Package• Moisture Sensitivity Level 1• E
NUF2441 - Integrated Passive Filter with ESD ProtectionFeatures Provides EMI Filtering and ESD Protection Single IC Offers Cost Saving by Replacing 2 Inductors, 4 Capacitors, and 4 TVs diodes Compliance with IEC61000-4-2, (Level 4) 8kV (Contact), 15kV (air) Flip-Chip Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C, Human Body Model = 3B Pb-Free Solder Bumps
NUF2441FCT1 - Integrated Passive Filter with ESD ProtectionFeatures Provides EMI Filtering and ESD Protection Single IC Offers Cost Saving by Replacing 2 Inductors, 4 Capacitors, and 4 TVs diodes Compliance with IEC61000-4-2, (Level 4) 8kV (Contact), 15kV (air) Flip-Chip Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C, Human Body Model = 3B Pb-Free Solder Bumps
NUF2441FCT1G - Integrated Passive Filter with ESD ProtectionFeatures Provides EMI Filtering and ESD Protection Single IC Offers Cost Saving by Replacing 2 Inductors, 4 Capacitors, and 4 TVs diodes Compliance with IEC61000-4-2, (Level 4) 8kV (Contact), 15kV (air) Flip-Chip Package Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C, Human Body Model = 3B Pb-Free Solder Bumps
NUF3101 - Three Line EMI FilterThis device isA 3 line EMI filter array for SIM Card wirelessapplications. Greater than −25 dB attenuation is obtained atfrequencies from 800 MHz to 2.2 GHz. ESD protection is providedacross all capacitors.Features• EMI Filtering and ESD Protection• Pb−Free Package is Available*• Integration of 10 Discretes• Provides Protection for IEC61000−4−2 (Level 4)8.0 kV (Contact)15 kV (Air)• Flip−Chip Package• Moisture Sensitivity Level 1• ESD Rating: Machine Model
NUF3101FCT1 - Three Line EMI FilterThis device isA 3 line EMI filter array for SIM Card wirelessapplications. Greater than −25 dB attenuation is obtained atfrequencies from 800 MHz to 2.2 GHz. ESD protection is providedacross all capacitors.Features• EMI Filtering and ESD Protection• Pb−Free Package is Available*• Integration of 10 Discretes• Provides Protection for IEC61000−4−2 (Level 4)8.0 kV (Contact)15 kV (Air)• Flip−Chip Package• Moisture Sensitivity Level 1• ESD Rating: Machine Model
NUF3101FCT1G - Three Line EMI FilterThis device isA 3 line EMI filter array for SIM Card wirelessapplications. Greater than −25 dB attenuation is obtained atfrequencies from 800 MHz to 2.2 GHz. ESD protection is providedacross all capacitors.Features• EMI Filtering and ESD Protection• Pb−Free Package is Available*• Integration of 10 Discretes• Provides Protection for IEC61000−4−2 (Level 4)8.0 kV (Contact)15 kV (Air)• Flip−Chip Package• Moisture Sensitivity Level 1• ESD Rating: Machine Model
NUF6105FCT1 - 6 Channel Emi Pi-filter Array With Esd Protection
NUF6106 - 6 Channel Emi Pi-filter Array With Esd Protection This Device isA 6 Channel Emi Filter Array For Data Lines. Greaterthan −20 DB Attenuation is Obtained at Frequencies From 800 MHZ To2.2 Ghz. It Also Offers Esd Protection − Clamping Transients Fromstatic Discharges to Protect Delicate Data Line Circuitry.
NUF6106FCT1 - 6 Channel Emi Pi-filter Array With Esd Protection
NUF6402 - 4 Line EMI Filter with ESD Protection DFN 1.35 x 3.0 mm PackageThis device is an EMI filter array for wireless applications. Greaterthan −30 dB attenuation is obtained at frequencies from 800 MHz to3.0 GHz. It also offers ESD protection clamping transients from staticdischarges. ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 28 Discrete Components• DFN Package, 1.35 x 3.0 mm• Moisture Sensitivity Level 1• ESD Ratings: IEC61000−4−
NUF6402MNT1G - 4 Line EMI Filter with ESD Protection DFN 1.35 x 3.0 mm PackageThis device is an EMI filter array for wireless applications. Greaterthan −30 dB attenuation is obtained at frequencies from 800 MHz to3.0 GHz. It also offers ESD protection clamping transients from staticdischarges. ESD protection is provided across all capacitors.Features• EMI Filtering and ESD Protection• Integration of 28 Discrete Components• DFN Package, 1.35 x 3.0 mm• Moisture Sensitivity Level 1• ESD Ratings: IEC61000−4−
NUF8401 - Low Capacitance 8 Line EMI Filter with ESD Protection, 1.6 x 4.0 mm DFN Package
NUF8402 - 8 Line EMI Filter with ESD Protection 1.6 x 4.0 mm DFN PackageFeatures This device is an 8 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection-clamping transients from static discharges. ESD protection is provided across all capacitors.EMI Filtering and ESD Protection Integration of 24 Discrete Components Compliance with IEC61000-4-2 (Level 4) > 18.0 kV (Contact) DFN Package, 1.6 x 4.0 mm Moisture
NUF8402MNT4G - 8 Line EMI Filter with ESD Protection
NUF9002 - Low Capacitance 10 Line EMI Filter with ESD ProtectionThis device isA 10 line EMI filter array for wireless applications. Greater than -25 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. ESD protection is provided across all capacitors.Features EMI Filtering and ESD Protection Integration of 50 Discretes Provides Protection for IEC61000-4-2(Level 4) 8.0 kV (Contact) Flip-Chip Package Moisture Sensitivity Level 1 ESD Rating: Machine Model=C; Human Body Model=3B Pb-Free Package is Availa
NUF9002FCT1 - Low Capacitance 10 Line EMI Filter with ESD ProtectionThis device isA 10 line EMI filter array for wireless applications. Greater than -25 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. ESD protection is provided across all capacitors.Features EMI Filtering and ESD Protection Integration of 50 Discretes Provides Protection for IEC61000-4-2(Level 4) 8.0 kV (Contact) Flip-Chip Package Moisture Sensitivity Level 1 ESD Rating: Machine Model=C; Human Body Model=3B Pb-Free Package is Availa
NUF9002FCT1G - Low Capacitance 10 Line EMI Filter with ESD ProtectionThis device isA 10 line EMI filter array for wireless applications. Greater than -25 dB attenuation is obtained at frequencies from 900 MHz to 3.0 GHz. ESD protection is provided across all capacitors.Features EMI Filtering and ESD Protection Integration of 50 Discretes Provides Protection for IEC61000-4-2(Level 4) 8.0 kV (Contact) Flip-Chip Package Moisture Sensitivity Level 1 ESD Rating: Machine Model=C; Human Body Model=3B Pb-Free Package is Availa
NUP2201MR6 - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP2201MR6T1 - Low Capacitance Tsop-6 Diode-tvs Array For High Speed Data Lines Protection
NUP2201MR6T1G - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP2202W1 - Low Capacitance SC-88 Diode-TVS Array for HIGH Speed Data Lines Protection
NUP2202W1T2G - Low Capacitance SC-88 Diode-TVS Array for HIGH Speed Data Lines Protection
NUP2301MW6T1 - Low Capacitance Diode Array for ESD Protection in Two Data Lines
NUP2301MW6T1D - Low Capacitance Diode Array for ESD Protection in Two Data Lines
NUP2301MW6T1G - Low Capacitance Diode Array For Esd Protection In Two Data Lines
NUP4102 - Bi-Directional Quad (Clipper) This 6-Pin Bi-Directional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment such as computers, printers, cell phones, medical equipment, and other applications. Its integrated design provides bi-directional protection for four separate lines usingA single SOT-563 package. This device is ideal for situations where board space isA premium.
NUP4102XV6T1 - Bi-Directional Quad (Clipper) This 6-Pin Bi-Directional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment such as computers, printers, cell phones, medical equipment, and other applications. Its integrated design provides bi-directional protection for four separate lines usingA single SOT-563 package. This device is ideal for situations where board space isA premium.
NUP4201DR2 - Low Capacitance Surface Mount Tvs For High-speed Data Interfaces
NUP4201MR6 - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP4201MR6T1 - Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection
NUP4201MR6T1G - Low Capacitance Tsop-6 Diode-tvs Array For High Speed Data Lines Protection
NUP4301MR6T1 - Low Capacitance Diode Array For Esd Protection In Four Data Lines
NUP4302MR6 - Schottky Diode Array For Four Data Line Esd Protection
NUP4302MR6T1 - Schottky Diode Array for Four Data Line ESD Protection
NUP5120X6 - Unidirectional TVS Array For High-speed Data Line Protection, Package: Micro-8, Pins=8
NUP5120X6T1 - 5-Line Transient Voltage Suppressor Array This 5-line Voltage Transient Supp...
NUP6101DMR2 - Unidirectional Tvs Array For High-speed Data Line Protection
NUP8010MN - 8 Line Low Capacitance Transient Voltage Suppressor DFN8 1.6x1.6mm This integrated trans...
NUP8010MNT1G - 8 Line Low Capacitance Transient Voltage Suppressor DFN8 1.6x1.6mm This integrated trans...
NUS1204MN - Overvoltage Protection IC with Integrated MOSFETThis device representsA new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) withA -12V P-Channel Power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before damage can occur. The OVP IC is optimized for applications us
NUS1204MNT1G - Overvoltage Protection IC with Integrated MOSFETThis device representsA new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) withA -12V P-Channel Power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before damage can occur. The OVP IC is optimized for applications us
NUS2045 - Overvoltage Protection IC with Integrated MOSFET These devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any
NUS2045MNT1G - Overvoltage Protection IC with Integrated MOSFET These devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus protecting the load before any
NUS2401SNT1 - Integrated PNP/NPN Digital Transistors Array
NUS2401SNT1G - Integrated Pnp/npn Digital Transistors Array
NUS2501W6 - Integrated Npn Digital Transistor With Switching Transistor With Switching
NUS2501W6T1 - Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS3045 - Integrated Overvoltage Protection IC with Integrated 30V P-Channel MOSFETThese devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus prote
NUS3045MNT1G - Integrated Overvoltage Protection IC with Integrated 30V P-Channel MOSFETThese devices representA new level of safety and integration by combining the NCP345 overvoltage protection (OVP) withA 20V P-Channel Power MOSFET (NUS2045MN) or withA 30V P-Channel Power MOSFET (NUS3045MN). They are specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such hazardous events, the IC quickly disconnects the input supply from the load, thus prote
NUS5530MN - Integrated Power MOSFET with PNP Low VCE(sat) Switching TransistorThis integrated device representsA new level of safety and board-space reduction by combining the 20V P-Channel withA PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
NUS5530MNR2G - Integrated Power MOSFET with PNP Low VCE(sat) Switching TransistorThis integrated device representsA new level of safety and board-space reduction by combining the 20V P-Channel withA PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
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