BGE788C - 750 MHz, 34 dB gain push-pull amplifierHybrid high dynamic range amplifier module operating atA supply voltage of 24V (DC) inA SOT115J package. The module consists of two cascaded stages both in cascode configuration. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesExcellent linearity Extremely low noise High gain Excellent return loss properties ApplicationsSingle module line extender in CATV systems operating in
BLC6G10-200 - UHF power LDMOS transistor200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
BLC6G20-110 - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G20-75 - UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 550 mA: Output power = 29.5 W (AV) Gain =19 dB Efficiency = 38.5 pct ACPR400 = -62.5 dBc ACPR600 = -72 dBc EVMrms = 1.5 pct Easy power contr
BLC6G20LS-110 - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G20LS-75 - UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 550 mA: Output power = 29.5 W (AV) Gain =19 dB Efficiency = 38.5 pct ACPR400 = -62.5 dBc ACPR600 = -72 dBc EVMrms = 1.5 pct Easy power contr
BLC6G22-100 - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G22-130 - UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 30 W (AV) Gain =16 dB Efficiency = 31 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD p
BLC6G22LS-100 - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 25 W (AV) Gain =18 dB Efficiency = 32 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD pr
BLC6G22LS-130 - UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,A supply voltage of 28V and an IDq of 950 mA: Output power = 30 W (AV) Gain =16 dB Efficiency = 31 pct IMD3 = -37 dBc ACPR = -40 dBc Easy power control Integrated ESD p
BLF369 - VHF power LDMOS transistorA 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band.
BLF4G10-120 - UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequency of 960 MHz,A supply voltage of 28V and an IDq of 850 mA: Load power = 48 W (AV) Gain = 19 dB (typ) Efficiency = 40 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -72 dBc (typ) EVMrms = 1.5 pct (typ) Easy powe
BLF4G10LS-120 - UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 920 MHz and 960 MHz,A supply voltage of 28V and an IDq of 650 mA Load power = 48 W (AV) Gain = 19 dB (typ) Efficiency = 40 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -72 dBc (typ) EVMrms = 1.5 pct (t
BLF4G10S-120 - UHF power LDMOS transistor120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequency of 960 MHz,A supply voltage of 28V and an IDq of 850 mA: Load power = 48 W (AV) Gain = 19 dB (typ) Efficiency = 40 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -72 dBc (typ) EVMrms = 1.5 pct (typ) Easy powe
BLF4G20-110B - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.
BLF4G20LS-110B - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct. (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.1 pct.
BLF4G20S-110B - UHF power LDMOS transistor110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance atA frequency of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 650 mA: Load power = 48 W (AV) Gain = 13.8 dB (typ) Efficiency = 38.5 pct (typ) ACPR400 = -61 dBc (typ) ACPR600 = -74 dBc (typ) EVMrms = 2.
BLF4G22-100 - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-Carrier W-CDMA performance atA supply voltage of 28V and an IDq of 900 mA: Load power = 25 W (AV) Gain = 13.5 dB (typ) Efficiency = 26 pct. (typ) ACPR = -41 dBc (typ) IMD3 = -37 dBc (typ) Easy power control Integrated ESD protection Excellent
BLF4G22S-100 - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-Carrier W-CDMA performance atA supply voltage of 28V and an IDq of 900 mA: Load power = 25 W (AV) Gain = 13.5 dB (typ) Efficiency = 26 pct. (typ) ACPR = -41 dBc (typ) IMD3 = -37 dBc (typ) Easy power control Integrated ESD protection Excellent
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